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Side Guo

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Published work

2 published item(s)

preprint2025arXiv

Magneto-Optical Analysis of Magnetic Anisotropy in Ultrathin Tm$_{3}$Fe$_{5}$O$_{12}$/Pt Bilayers

Magnetic bilayers consisting of an epitaxially grown ferrimagnetic insulator and a heavy metal layer are attractive for spintronic application because of the opportunity for electric control and read-out of spin textures via spin orbit torque. Here, we investigate ultrathin thulium iron garnet (TmIG)/Pt bilayers when the TmIG layer thickness is 3 nm and below using a sensitive Sagnac magneto-optical Kerr effect technique. We compare the hysteresis loops from out-of-plane and in-plane applied magnetic fields. The preferred magnetization orientation evolves with the TmIG thickness and the presence of the Pt overlayer. We quantify the evolution of the magnetic anisotropy in these ultrathin films and find a significant change even when the TmIG thickness is varied by less than 1 nm. In these ultrathin films, the presence of a Pt overlayer changes the effective anisotropy field by more than a factor of 2, suggesting that the interfacial anisotropy at the Pt/TmIG interface plays a critical role in this regime.

preprint2022arXiv

Enhancing Perpendicular Magnetic Anisotropy in Garnet Ferrimagnet by Interfacing with Few-Layer WTe2

Engineering magnetic anisotropy in a ferro- or ferrimagnetic (FM) thin film is crucial in spintronic device. One way to modify the magnetic anisotropy is through the surface of the FM thin film. Here, we report the emergence of a perpendicular magnetic anisotropy (PMA) induced by interfacial interactions in a heterostructure comprised of a garnet ferrimagnet, Y3Fe5O12 (YIG), and the low-symmetry, high spin orbit coupling (SOC) transition metal dichalcogenide, WTe2. At the same time, we also observed an enhancement in Gilbert damping in the WTe2 covered YIG area. Both the magnitude of interface-induced PMA and the Gilbert damping enhancement have no observable WTe2 thickness dependence down to single quadruple-layer, indicating that the interfacial interaction plays a critical role. The ability of WTe2 to enhance the PMA in FM thin film, combined with its previously reported capability to generate out-of-plane damping like spin torque, makes it desirable for magnetic memory applications.