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Si Gao

Si Gao appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-sciComputer Vision

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Published work

4 published item(s)

preprint2022arXiv

NTIRE 2022 Challenge on Super-Resolution and Quality Enhancement of Compressed Video: Dataset, Methods and Results

This paper reviews the NTIRE 2022 Challenge on Super-Resolution and Quality Enhancement of Compressed Video. In this challenge, we proposed the LDV 2.0 dataset, which includes the LDV dataset (240 videos) and 95 additional videos. This challenge includes three tracks. Track 1 aims at enhancing the videos compressed by HEVC at a fixed QP. Track 2 and Track 3 target both the super-resolution and quality enhancement of HEVC compressed video. They require x2 and x4 super-resolution, respectively. The three tracks totally attract more than 600 registrations. In the test phase, 8 teams, 8 teams and 12 teams submitted the final results to Tracks 1, 2 and 3, respectively. The proposed methods and solutions gauge the state-of-the-art of super-resolution and quality enhancement of compressed video. The proposed LDV 2.0 dataset is available at https://github.com/RenYang-home/LDV_dataset. The homepage of this challenge (including open-sourced codes) is at https://github.com/RenYang-home/NTIRE22_VEnh_SR.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Giant Polarization and Abnormal Flexural Deformation in Bent Freestanding Perovskite Oxides

Recent realizations of ultrathin freestanding perovskite oxides offer a unique platform to probe novel properties in two-dimensional oxides. Here, we observed a giant flexoelectric response in freestanding BiFeO3 and SrTiO3 in their bent state arising from strain gradients up to 4x10e7/m, suggesting a promising approach for realizing extremely large polarizations. Additionally, a substantial reversible change in thickness was discovered in bent freestanding BiFeO3, which implies an unusual bending-expansion/shrinkage and thickness-dependence Poisson's ratios in this ferroelectric membrane that has never been seen before in crystalline materials. Our theoretical modeling reveals that this unprecedented flexural deformation within the membrane is attributable to a flexoelectricity-piezoelectricity interplay. The finding unveils intriguing nanoscale electromechanical properties and provides guidance for their practical applications in flexible nanoelectromechanical systems.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Probing Carrier Transport and Structure-property Relationship of Highly Ordered Organic Semiconductors at Two-dimensional Limit

One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two-dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered mono- to tetra-layer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to band-like in subsequent layers. Such abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ~3nm. Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics

Here we repair the single-layer MoSe2 field-effect transistors by the EDTA processing, after which the devices' room-temperature carrier mobility increases from 0.1 to over 70cm2/Vs. The atomic dynamics is constructed by the combined study of the first-principle calculation, aberration-corrected transmission electron microscopy and Raman spectroscopy. Single/double Se vacancies are revealed originally, which cause some mid-gap impurity states and localize the device carriers. They are found repaired with the result of improved electronic transport. Such a picture is confirmed by a 1.5cm-1 red shift in the Raman spectra.

0 citations0 reviewsNo code linkedOpen access