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Researcher profile

Shoeib Babaee Touski

Shoeib Babaee Touski contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.soft

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Published work

6 published item(s)

preprint2022arXiv

Hydrogen Storage Performance Enhancement and Bandgap Opening of M-Decorated ($\mathrm{M}=\mathrm{Li}$, Na and K) III\textsubscript{4}-V\textsubscript{4} Monolayer by Fluorine Functionalization

The effects of fluorine functionalization on the hydrogen storage capability of alkaline decorated III\textsubscript{4}-V\textsubscript{4} monolayers is studied. This structure can store up to two hydrogen molecules per alkaline atom. Here, we demonstrate that functionalizing alkaline decorated monolayer with a high electronegative element of fluorine can significantly enhance both binding energy and the maximum number of the stored hydrogen molecules. In this regard, the hydrogen molecule storage capability is notably improved from two to four and when absolute binding is considered. In addition, F-functionalization of M-decorated III\textsubscript{4}-V\textsubscript{4} can demonstrate bandgap opening effect, introduce semiconducting characteristics and forming a new two-dimensional semiconductor structure. The bandgap for Li-Al$_4$P$_4$-F is 1.23 eV which is very close to the solar peak. The resulted bandgap in the M-III\textsubscript{4}-V\textsubscript{4}-F structure is even significantly larger than that of pristine III\textsubscript{4}-V\textsubscript{4} monolayer. The binding of the hydrogen molecule to the alkaline atom is also improved from 0.114 to 0.272 eV by the fluorine functionalization.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Field-Effect Transistor Based on MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties

The electronic properties of a field-effect transistor with two different structures of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers as the channel material in the presence of biaxial strain are investigated. The band structures show that these compounds are semiconductors with an indirect bandgap. Their band gaps can be adjusted by applying in-plane biaxial strain. In the following, the variation of the energies of the valleys and corresponding effective masses with respect to the strain are explored. Finally, the strained MoSi$_2$N$_4$ or WSi$_2$N$_4$ are used as the channel of a p-type FET and the corresponding current-voltage characteristic is explored. The results show this FET has an I$\mathrm{_{ON}}$/I$\mathrm{_{OFF}}$ ratio larger than $\mathrm{10^6}$ and subthreshold swing in the range of 96-98 mV/dec. The I$\mathrm{_{ON}}$/I$\mathrm{_{OFF}}$ ratio of these compounds with respect to strain are compared.

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preprint2020arXiv

Interplay Between Stacking Order and In-plane Strain on the Electrical Properties of Bilayer Antimonene

In this work, the electrical properties of bilayer Antimonene with different stacking orders are studied. Density functional theory with van der Waals (vdW) correction is used to investigate the electrical performances. Two configurations demonstrate considerable bandgaps, whereas, the bandgaps are close to zero for other structures. The in-plane biaxial strain is applied to modify the electrical properties. The bandgap reaches a maximum at a specific strain level and then closes at more enormous compressive and tensile strains. The energy of three valleys ($Γ$, Q, and K) in the conduction band are explored with the strain. The conduction band minimum switches between these valleys with the strain. Two bands also contribute to the valence band maximum, and the energy of these two bands for various strains is investigated. Finally, the effective mass for the valleys of the conduction band and the valence band are obtained. The effective mass at $Γ$-valley demonstrates the lowest effective mass.

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preprint2020arXiv

Spin-Orbit and Strain Induced Modification in Electrical Properties of Monolayer InSb

In this work, the electrical properties of monolayer InSb in the presence of biaxial strain using density functional theory are investigated. Here, we first explore the band structure of InSb with and without spin-orbit coupling (SOC) consideration. The electron and hole effective mass modify with SOC consideration. The electron and hole effective masses lowered two and ten times, respectively. The location of valleys in conduction and valence band for various strains are explored, and the corresponding effective masses are reported. A lower effective mass is obtained for both electron and hole with applying tensile strain, whereas, the bandgap closes for large tensile strain. A numeric fitting has applied to effective mass versus strain, and an equation for every curve is reported. Finally, the work function of this material for different strains is obtained.

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preprint2020arXiv

Strain Engineering of Spin and Rashba properties in Group-III Monochalcogenide MX (M=Ga, In and X=S, Se, Te) Monolayer

In this paper, spin properties of monolayer MX (M=Ga, In and X=S, Se, Te) in the presence of strain are studied. Density functional theory is used to investigate spin properties. The strain changes modification of bandgap due to spin-orbit coupling, the results indicate the spin-orbit coupling has a higher effect in the compressive regime. Also, spin splitting in the conduction and valence bands respect to strain are compared for six materials. The location of conduction band minimum (CBM) imposed a type of spin properties. These materials with mirror symmetry can display the Rashba effect while M valley is located at CBM. Strain tunes the conduction band minimum in three valleys (K, M and $Γ$ valleys) and determines which spin effect (spin splitting, Rashba splitting or no spin splitting) has occurred in each strain for every material. Lastly, the relation between the Rashba parameter and the atomic mass is explored and it is observed that there is a linear correlation between atomic mass and Rashba coefficient.

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preprint2020arXiv

Ultra-Thin SiGe in the Source Modifies Performance of Thin-Film Tunneling FET

In this work, the source structure of an n-type thin-film tunneling FET is engineered to get better performance. An ultra-thin SiGe along with Si is used in the source of silicon-based TFET. Two structures are compared with conventional TFET, one, SiGe is located on the top of Si in the source and another one in reverse. Simulations approve these structures can reduce sub-threshold swing, OFF-current several times, and increase the ON-OFF ratio. Band diagram for conduction and valance bands are investigated and band to band tunneling (BTBT) generation rate is used to find better performance. We find current flows at Si in the source with the wider bandgap. Ge mole fraction of SiGe is varied and its effects on the performance of TFET are studied. The SiGe thickness for both structures is explored to obtain the best thickness for SiGe.

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