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Shiyuan Gao

Shiyuan Gao contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Quasiparticle band alignment and stacking-independent exciton in MA$_2$Z$_4$ (M = Mo, W, Ti; A= Si, Ge; Z = N, P, As)

Motivated by the recently synthesized two-dimensional semiconducting MoSi$_2$N$_4$, we systematically investigate the quasiparticle band alignment and exciton in monolayer MA$_2$Z$_4$ (M = Mo, W, Ti; A= Si, Ge; Z = N, P, As) using ab initio GW and Bethe-Salpeter equation calculations. Compared with the results from density functional theory (DFT), our GW calculations reveal substantially more significant band gaps and different absolute quasiparticle energy but predict the same types of band alignments.

preprint2020arXiv

MPSUM: Entity Summarization with Predicate-based Matching

With the development of Semantic Web, entity summarization has become an emerging task to generate concrete summaries for real world entities. To solve this problem, we propose an approach named MPSUM that extends a probabilistic topic model by integrating the idea of predicate-uniqueness and object-importance for ranking triples. The approach aims at generating brief but representative summaries for entities. We compare our approach with the state-of-the-art methods using DBpedia and LinkedMDB datasets.The experimental results show that our work improves the quality of entity summarization.

preprint2020arXiv

Raman Response and Transport Properties of One-Dimensional van der Waals Tellurium Nanowires

Tellurium can form nanowires of helical atomic chains. Given their unique one-dimensional van der Waals structure, these nanowires are expected to show remarkably different physical and electronic properties than bulk tellurium. Here we show that few-chain and single-chain van der Waals tellurium nanowires can be isolated using carbon nanotube and boron nitride nanotube encapsulation. With the approach, the number of atomic chains can be controlled by the inner diameter of the nanotube. The Raman response of the structures suggests that the interaction between a single-atomic tellurium chain and a carbon nanotube is weak, and that the inter-chain interaction becomes stronger as the number of chains increases. Compared with bare tellurium nanowires on SiO2, nanowires encapsulated in boron nitride nanotubes exhibit a dramatically enhanced current-carrying capacity, with a current density of 1.5*10^8 A cm-2, which exceeds that of most semiconducting nanowires. We also use our tellurium nanowires encapsulated in boron nitride nanotubes to create field-effect transistors that have a diameter of only 2 nm.