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Source author record

Shiva Safaei

Shiva Safaei appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elquant-ph

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Published work

3 published item(s)

preprint2020arXiv

Potential Coexistence of Exciton and Fermion Pair Condensations

Extensive theoretical and experimental investigation has been conducted on fermion pair condensation and exciton condensation as distinct classes of Bose-Einstein-like condensation. In this work, the existence of a fermion-exciton condensate---a single quantum state in which character of both fermion pair and exciton condensates coexist---is established computationally in the low-particle-number ($N$) limit and theoretically in the large-$N$ thermodynamic limit. The trade-off between the fermion pair and excitonic character of the fermion-exciton condensate is shown to be elliptic in nature. The possibility that the properties of fermion-exciton condensates could be a hybrid of the properties of fermion pair condensates and exciton condensates is discussed, and future experimental and computational exploration of this new class of condensate, which may potentially be realizable in a bilayer of superconductors, is anticipated.

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preprint2015arXiv

Quantum Spin Hall Effect in IV-VI Topological Crystalline Insulators

We envision that quantum spin Hall effect should be observed in $(111)$-oriented thin films of SnSe and SnTe topological crystalline insulators. Using a tight-binding approach supported by first-principles calculations of the band structures we demonstrate that in these films the energy gaps in the two-dimensional band spectrum depend in an oscillatory fashion on the layer thickness. These results as well as the calculated topological invariant indexes and edge state spin polarizations show that for films ~20-40 monolayers thick a two-dimensional topological insulator phase appears. In this range of thicknesses in both, SnSe and SnTe, (111)-oriented films edge states with Dirac cones with opposite spin polarization in their two branches are obtained. While in the SnTe layers a single Dirac cone appears at the projection of the G point of the two-dimensional Brillouin zone, in the SnSe (111)-oriented layers three Dirac cones at M points projections are predicted.

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preprint2015arXiv

Quantum spin Hall effect in strained (111)-oriented SnSe layers

Recently, the quantum spin Hall effect has been predicted in (111)-oriented thin films of SnSe and SnTe topological crystalline insulators. It was shown that in these films the energy gaps in the two-dimensional band spectrum depend in an oscillatory fashion on the layer thickness -- the calculated topological invariant indexes and edge state spin polarizations show that for films 20-40 monolayers thick a two-dimensional topological insulator phase appears. Edge states with Dirac cones with opposite spin polarization in their two branches are obtained for both materials. However, for all but the (111)-oriented SnTe films with an even number of monolayers an overlapping of bands in $\overlineΓ$ and $\overline{\mathrm{M}}$ diminishes the final band gap and the edge states appear either against the background of the bands or within a very small energy gap. Here we show that this problem in SnSe films can be removed by applying an appropriate strain. This should enable observation of the Quantum Spin Hall effect also in SnSe layers.

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