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Shijun Yuan

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2022arXiv

Magnetic phase transition induced ferroelectric polarization in BaFeF4 with room temperature weak ferromagnetism

BaMF4 (M=Fe, Co, Ni and Mn) family are typical multiferroic materials, having antiferromagnetism at around liquid nitrogen temperature. In this work, polycrystalline BaFeF4 has been prepared by solid state reaction. The slight deficiency of Fe leads to the coexistence of valence states of +2 and +3, facilitating the electrons to hop between the neighboring Fe2+ and Fe3+ ions through the middle F- ion, leading to the strong double exchange interaction with weak ferromagnetism above room temperature. A bifurcation at about 170 K between the zero-field-cooled and field-cooled temperature dependent magnetization curves indicates the onset of 2-dimensional antiferromagnetism, which is completed at about 125 K with the sudden drop of magnetization. Despite the fact of type-I multiferroic, its magnetoelectricity can be evidenced by the pyroelectric current, which shows a peak starting at about 170 K and finishing at about 125 K. The saturated ferroelectric polarization change of around 34 μC/m2 is observed, which is switchable by the reversed poling electric field and decreases to about 30 μC/m2 under a magnetic field of 90 kOe. This magnetoelectricity can be qualitatively reproduced by first-principles calculations. Our results represent substantial progress to search for high-temperature multiferroics in ferroelectric fluorides.

preprint2014arXiv

Two-dimensional Quasi-Freestanding Molecular Crystals for High-Performance Organic Field-Effect Transistors

Two-dimensional atomic crystals are extensively studied in recent years due to their exciting physics and device applications. However, a molecular counterpart, with scalable processability and competitive device performance, is still challenging. Here, we demonstrate that high-quality few-layer dioctylbenzothienobenzothiophene molecular crystals can be grown on graphene or boron nitride substrate via van der Waals epitaxy, with precisely controlled thickness down to monolayer, large-area single crystal, low process temperature and patterning capability. The crystalline layers are atomically smooth and effectively decoupled from the substrate due to weak van der Waals interactions, affording a pristine interface for high-performance organic transistors. As a result, monolayer dioctylbenzothienobenzothiophene molecular crystal field-effect transistors on boron nitride show record-high carrier mobility up to 10cm2V-1s-1 and aggressively scaled saturation voltage around 1V. Our work unveils an exciting new class of two-dimensional molecular materials for electronic and optoelectronic applications.

preprint2013arXiv

Hopping Transport through Defect-induced Localized States in Molybdenum Disulfide

Molybdenum disulfide is a novel two-dimensional semiconductor with potential applications in electronic and optoelectronic devices. However, the nature of charge transport in back-gated devices still remains elusive as they show much lower mobility than theoretical calculations and native n-type doping. Here we report transport study in few-layer molybdenum disulfide, together with transmission electron microscopy and density functional theory. We provide direct evidence that sulfur vacancies exist in molybdenum disulfide, introducing localized donor states inside the bandgap. Under low carrier densities, the transport exhibits nearest-neighbor hopping at high temperatures and variable-range hopping at low temperatures, which can be well explained under Mott formalism. We suggest that the low-carrier-density transport is dominated by hopping via these localized gap states. Our study reveals the important role of short-range surface defects in tailoring the properties and device applications of molybdenum disulfide.