Researcher profile

Shijun Liang

Shijun Liang contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Observation of Coexisting Dirac Bands and Moiré Flat Bands in Magic-Angle Twisted Trilayer Graphene

Moiré superlattices that consist of two or more layers of two-dimensional materials stacked together with a small twist angle have emerged as a tunable platform to realize various correlated and topological phases, such as Mott insulators, unconventional uperconductivity and quantum anomalous Hall effect. Recently, the magic-angle twisted trilayer graphene (MATTG) has shown both robust superconductivity similar to magic-angle twisted bilayer graphene (MATBG) and other unique properties, including the Pauli-limit violating and re-entrant superconductivity. These rich properties are deeply rooted in its electronic structure under the influence of distinct moiré potential and mirror symmetry. Here, combining nanometer-scale spatially resolved angle-resolved photoemission spectroscopy (nano-ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we systematically measure the yet unexplored band structure of MATTG near charge neutrality. Our measurements reveal the coexistence of the distinct dispersive Dirac band with the emergent moiré flat band, showing nice agreement with the theoretical calculations. These results serve as a stepstone for further understanding of the unconventional superconductivity in MATTG.

preprint2021arXiv

Electronic controllable broadband and robust terahertz surface plasmon-polaritons switch based on hybrid ITO waveguide coupler

The surface plasmon-polaritons (SPPs) switch is the key element of the integrated devices in optical computation and terahertz (THz) communications. In this paper, we propose a novel design of THz SPPs switch based on quantum engineering. Due to the robustness of coherent quantum control technique, our switch is very robust against with perturbations of geometrical parameters and presents a good performance at on-state (and off-state) from 0.5 THz to 0.7 THz. The on-state and off-state of our device can be controlled by the external voltage. We believe this finding will be the great improvement for the integrated optical computing and THz communications.