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Sheng-Di Lin

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cond-mat.mes-hall physics.optics cond-mat.dis-nn cond-mat.mtrl-sci

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preprint2015arXiv

Single-crystalline aluminum film for ultraviolet plasmonic nanolasers

Plasmonic devices have advanced significantly in the past decade. Being one of the most intriguing devices, plamonic nanolasers plays an important role in biomedicine, chemical sensor, information technology, and optical integrated circuits. However, nanoscale plasmonic devices, particularly in ultraviolet regime, are extremely sensitive to metal and interface quality, which renders the development of ultraviolet plasmonics. Here, by addressing the material issues, we demonstrate a low threshold, high characteristic temperature metal-oxide-semiconductor ZnO nanolaser working at room temperature. The template for ZnO nanowires consists of a flat single-crystalline aluminum film grown by molecular beam epitaxy and an ultra-smooth Al2O3 spacer layer prepared by atomic layer deposition. By effectively reducing surface plasmon scattering loss and metal intrinsic absorption loss, the high-quality metal film and sharp interfaces between layers boost the device performance. Our work paves the way for future applications using ultraviolet plasmonic nanolasers and related devices.

preprint2015arXiv

Transient dual-energy lasing in a semiconductor microcavity

We demonstrate sequential lasing at two well-separated energies in a highly photoexcited planar microcavity at room temperature. Two spatially overlapped lasing states with distinct polarization properties appear at energies more than 5 meV apart. Under a circularly polarized nonresonant 2 ps pulse excitation, a sub-10-ps transient circularly polarized high-energy (HE) state emerges within 10 ps after the pulse excitation. This HE state is followed by a pulsed state that lasts for 20--50 ps at a low energy (LE) state. The HE state is highly circularly polarized as a result of a spin-preserving stimulated process, while the LE state shows a significantly reduced circular polarization because of a diminishing spin imbalance.

preprint2014arXiv

Single-crystalline Aluminum Nanostructures on Semiconducting GaAs Substrate for Ultraviolet to Near-infrared Plasmonics

Aluminum, as a metallic material for plasmonics, is of great interest because it extends the applications of surface plasmon resonance into the ultraviolet (UV) region and excels noble metals in the natural abundance, cost and compatibility with modern semiconductor fabrication process. Here, we present UV to near-infrared (NIR) plasmonic resonance of single-crystalline aluminum nanoslits and nanoholes. The high-definition nanostructures are fabricated with focused ion-beam (FIB) milling into an ultrasmooth single-crystalline aluminum film grown on a semiconducting GaAs substrate with molecular beam epitaxy (MBE) method. The single-crystalline aluminum film shows improved reflectivity and reduced two-photon photoluminescence (TPPL) due to the ultrasmooth surface. Both linear scattering and non-linear TPPL are studied in detail. The nanoslit arrays show clear Fano-like resonance and the nanoholes are found to support both photonic modes and localized surface plasmonic resonance. We also found that TPPL generation is more efficient when the excitation polarization is parallel rather than perpendicular to the edge of the aluminum film. Such counter-intuitive phenomenon is attributed to the high refractive index of the GaAs substrate. We show that the polarization of TPPL from aluminum well preserves the excitation polarization and is independent of the crystal orientation of the film or substrate. Our study gains insight into the optical property of aluminum nanostructures on high-index semiconducting GaAs substrate and illustrates a practical route to implement plasmonic devices onto semiconductors for future hybrid nanodevices.

preprint2013arXiv

A Room-temperature Spin-polarized Polariton Laser

In the field of spin-controlled semiconductor lasers, massive effort has been focused upon materials with long spin relaxation times (~ns). In contrast, we demonstrate room-temperature spin-polarized ultrafast pulsed lasing in InGaAs quantum wells (~10 ps) embedded within a GaAs microcavity. The microcavity studied here is similar to vertical-cavity surface-emitting lasers (VCSEL) used in optical communication. Unlike a VCSEL, the present polariton laser has nonlinear output and energy shifts owing to the mixing of the free-carrier polarization and cavity light field. At room temperature, we observe features resembling those in exciton-polariton condensates at cryogenic temperatures, including the spontaneous build-up of spatial coherence, macroscopic occupation, and spin polarization. Our results should stimulate activities to exploit spin-orbit interaction and many-body effects for fundamental studies of quantum light-matter fluids and developments of spin-dependent optoelectronic devices.

preprint2011arXiv

Mobility modulation effects in a double quantum well infrared photon-detector

An electrically isolated quantum well (QW) island can be positively charged by incoming infrared photon, because its electrons absorb photon energy via intersubband transition and acquire enough energy to escape it. This process has been used in a double QW photon-detector. Here, we present the observation of so-called negative photon-response in such detector. Its origin is clarified to be an electron mobility reduction phenomenon resulted from the photon induced charges.

preprint2010arXiv

Probing onset of strong localization and electron-electron interactions with the presence of direct insulator-quantum Hall transition

We have performed low-temperature transport measurements on a disordered two-dimensional electron system (2DES). Features of the strong localization leading to the quantum Hall effect are observed after the 2DES undergoes a direct insulator-quantum Hall transition with increasing the perpendicular magnetic field. However, such a transition does not correspond to the onset of strong localization. The temperature dependences of the Hall resistivity and Hall conductivity reveal the importance of the electron-electron interaction effects to the observed transition in our study.