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Shashwata Chattopadhyay

Shashwata Chattopadhyay contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Selective Enhancement in Phonon Scattering leads to High Thermoelectric Figure of Merit in ZnO -- Graphene Oxide Core-shell Nanohybrids

ZnO is a promising candidate as an environment friendly thermoelectric (TE) material. However, the poor TE figure of merit (zT) needs to be addressed to achieve significant TE efficiency for commercial applications. Here we demonstrate that selective enhancement in phonon scattering leads to increase in zT of RGO encapsulated Al-doped ZnO core shell nanohybrids, synthesized via a facile and scalable method. The incorporation of 1 at% Al with 1.5 wt% RGO into ZnO (AGZO) has been found to show significant enhancement in zT (=0.52 at 1100 K) which is an order of magnitude larger compared to that of bare undoped ZnO. Photoluminescence and X-ray photoelectron spectroscopy measurements confirm that RGO encapsulation significantly quenches surface oxygen vacancies in ZnO along with nucleation of new interstitial Zn donor states. Tunneling spectroscopy reveals that the band gap of ~ 3.4 eV for bare ZnO reduces effectively to ~ 0.5 eV upon RGO encapsulation, facilitating charge transport. The electrical conductivity enhancement also benefits from the more than 95% densification achieved, using the spark plasma sintering method, which aids reduction of GO into RGO. The same Al doping and RGO capping synergistically brings about drastic reduction of thermal conductivity, through enhanced phonon-phonon and point defect-phonon scatterings. These opposing effects on electrical and thermal conductivities enhances the power factors as well as the zT value. Overall, a practically viable route for synthesis of oxide - RGO TE material which could find its practical applications for the high-temperature TE power generation.

preprint2021arXiv

Tailoring Infrared Absorption and Thermal Emission with Ultrathin-film Interferences in Epsilon-Near-Zero Media

Engineering nanophotonic mode dispersions in ultrathin, planar structures enables significant control over infrared perfect absorption (PA) and thermal emission characteristics. Here, using simulations, the wavelength and angular ranges over which ultrathin, low loss, epsilon-near-zero (ENZ) films on a reflecting surface most efficiently absorb and re-radiate are identified, and the design parameters that tailor the ENZ mode dispersion within these limits are investigated. While the absorption is spectrally limited to wavelengths where the refractive index ($n$) lies below unity, the angular limits are determined by the ENZ material dispersion in this range. A model of ultrathin-film interference is developed to provide physical insight into the absorption resonances in this regime, occurring well below the conventional quarter-wavelength thickness limit. Driven by non-trivial phase shifts incurred on reflection at the $n<1$ surface, these resonant interferences are shown to be universal wave phenomena in planar structures having appropriate index contrast, extending beyond ENZ materials. Selective choice of material, film thickness and loss allows fine-tailoring the mode dispersions, enabling wide variation in spectral range ($ \sim 0.1 - 1.0 μm$) and precise directional control of spectrally and angularly narrow-band PA and thermal radiation, paving the way towards efficient ENZ-based infrared optical and thermal coatings.