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Shashi Pandey

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2 publications

preprint2023arXiv

Highly Sensitive and Self Powered Ultraviolet Photo Detector based on ZnO Nanorods Coated with TiO2_2

Nanorods (NRs) of crystalline ZnO coated with thin layers of TiO2_2(ZnO@TiO2_2) were fabricated with the help of the spin coating technique followed by the hydrothermal method. Scanning electron microscopy (SEM) and X-ray diffraction analysis confirms the morphology and structural stability of as-prepared NRs. The optical band gaps of the NRs were estimated, and a clear blue shift toward the UV region has been detected. When UV light falls on as-prepared device (i.e., in the "ON" state), a significant increase in photocurrent (IUV_{UV}) at zero voltage supply was observed from 6 μμA to 17 μμA while in the "OFF" state, the dark current (Idark_{dark}), increases from 0.08 μμA to 0.6 μμA with ZnO@TiO2_2 NRs as compared to bare ZnO NRs respectively. Responsivity and detectivity of TiO2_2 coated ZnO NRs based device found maximum in UV region unlike bare ZnO NRs. Enhanced photocurrent achieved by the growth of TiO2_2 layers on ZnO NRs is 250 μμA as compared to bare ZnO NRs for which it is 35 μμA at 10 V voltage supply under the ultraviolet irradiation (illumination intensity of 1 mW/cm2^2). Furthermore, theoretical calculations have been performed using the first-principles density-functional theory to understand the effects of heterostructure NRs on the electronic and optical properties of TiO2_2 coated ZnO.

preprint2021arXiv

Elucidating the Influence of Native Defects on Electrical and Optical Properties in Semiconducting Oxides: An Experimental and Theoretical Investigation

Defect engineering using self-doping or creating vacancies in polycrystalline oxide based materials has profound influence on optical absorption, UV photo detection, and electrical switching. However, defects induced semiconducting oxide devices show enhancement in photo detection and photosensitivity, and hence still remain interesting in the field of optoelectronics. In this study, defect engineering in semiconducting oxide materials is discussed along with their roles in optoelectronic device-based applications. Theoretical investigations have been done for identifying defect states by performing first-principles electronic structure calculations, employing the density-functional theory. Particularly, in this work, we have focused on probing the defect-induced changes in optical and electrical processes by means of experimental as well as computational investigations. Hence, systematic experimental measurements of optical absorption, electrical switching, charge density, and photocurrent in defect-rich semiconducting oxide samples have been performed. Our results suggest that defects can lead to enhancement of optoelectronic properties such as photocurrent, switching speed, optical absorption, etc. for semiconducting oxide based devices.

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