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Sharon M. Weiss

Sharon M. Weiss appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallphysics.opticscond-mat.mtrl-sciphysics.app-ph

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Published work

5 published item(s)

preprint2020arXiv

Guided Mid-IR and Near-IR Light within a Hybrid Hyperbolic-Material/Silicon Waveguide Heterostructure

Silicon waveguides have enabled large-scale manipulation and processing of near-infrared optical signals on chip. Yet, expanding the bandwidth of guided waves to other frequencies would further increase the functionality of silicon as a photonics platform. Frequency multiplexing by integrating additional architectures is one approach to the problem, but this is challenging to design and integrate within the existing form factor due to scaling with the free-space wavelength. Here, we demonstrate that a hexagonal boron nitride (hBN)/silicon hybrid waveguide can enable dual-band operation at both mid-infrared (6.5-7.0 um) and telecom (1.55 um) frequencies, respectively. Our device is realized via lithography-free transfer of hBN onto a silicon waveguide, maintaining near-infrared operation, while mid-infrared waveguiding of the hyperbolic phonon polaritons (HPhPs) in hBN is induced by the index contrast between the silicon waveguide and the surrounding air, thereby eliminating the need for deleterious etching of the hBN. We verify the behavior of HPhP waveguiding in both straight and curved trajectories, and validate their propagation characteristics within an analytical waveguide theoretical framework. This approach exemplifies a generalizable approach based on integrating hyperbolic media with silicon photonics for realizing frequency multiplexing in on-chip photonic systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Sub-picosecond all-optical switching in a hybrid VO2:silicon waveguide at 1550 nm

Achieving ultrafast all-optical switching in a silicon waveguide geometry is a key milestone on the way to an integrated platform capable of handling the increasing demands for higher speed and higher capacity for information transfer. Given the weak electro-optic and thermo-optic effects in silicon, there has been intense interest in hybrid structures in which that switching could be accomplished by integrating another material into the waveguide, including the phase-changing material, vanadium dioxide (VO2). It has long been known that the phase transition in VO2 can be triggered by ultrafast laser pulses, and that pump-laser fluence is a critical parameter governing the recovery time of thin films irradiated by femtosecond laser pulses near 800 nm. However, thin-film experiments are not a priori reliable guides to using VO2 for all-optical switching in on-chip silicon photonics because of the large changes in VO2 optical constants in the telecommunications band, the requirement of low insertion loss, and the limits on switching energy permissible in integrated photonic systems. Here we report the first measurements to show that the reversible, ultrafast photo-induced phase transition in VO2 can be harnessed to achieve sub-picosecond switching when small VO2 volumes are integrated in a silicon waveguide as a modulating element. Switching energies above threshold are of order 600 fJ/switch. These results suggest that VO2 can now be pursued as a strong candidate for all-optical switching with sub-picosecond on-off times.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Flow-Through Porous Silicon Membranes for Real-Time Label-Free Biosensing

A flow-through sensing platform based on open-ended porous silicon (PSi) microcavity membranes that are compatible with integration in on-chip sensor arrays is demonstrated. Due to the high aspect ratio of PSi nanopores, the performance of closed-ended PSi sensors is limited by infiltration challenges and slow sensor responses when detecting large molecules such as proteins and nucleic acids. In order to improve molecule transport efficiency and reduce sensor response time, open-ended PSi nanopore membranes were used in a flow-through sensing scheme, allowing analyte solutions to pass through the nanopores. The molecular binding kinetics in these PSi membranes were compared through experiments and simulation with those from closed-ended PSi films of comparable thickness in a conventional flow-over sensing scheme. The flow-through PSi membrane resulted in a six-fold improvement in sensor response time when detecting a high molecular weight analyte (streptavidin) versus in the flow-over PSi approach. This work demonstrates the possibility of integrating multiple flow-through PSi sensor membranes within parallel microarrays for rapid and multiplexed label-free biosensing.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Interfacial Effects on the Optical Properties of CdTe/CdS Quantum Dots

Using a combination of continuous wave and time-resolved spectroscopy, we study the effects of interfacial conditions on the radiative lifetimes and photoluminescence intensities of colloidal CdTe/CdS quantum dots (QDs) embedded in a three-dimensional nanostructured silicon (NSi) matrix. The NSi matrix was thermally oxidized under different conditions to change the interfacial oxide thickness. QDs embedded in a NSi matrix with ~0.5 nm of interfacial oxide exhibited reduced photoluminescence intensity and nearly five times shorter radiative lifetimes (~16 ns) compared to QDs immobilized within completely oxidized, nanostructured silica (NSiO2) frameworks (~78 ns). Optical absorption by the sub-nm oxidized NSi matrix partially lowers QD emission intensities while non-radiative carrier recombination and phonon assisted transitions influenced by defect sites within the oxide and NSi are believed to be the primary factors limiting the QD exciton lifetimes in the heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Optical Response of Monolayer CdTe/CdS Quantum Dots to X-rays and Gamma-rays

We investigate the influence of X-ray and gamma-ray irradiation on the photophysical properties of sub-monolayer CdTe/CdS quantum dots (QDs) immobilized in porous silica (PSiO2) scaffolds. The highly luminescent QD-PSiO2 thin films allow for straightforward monitoring of the optical properties of the QDs through continuous wave and time-resolved photoluminescence spectroscopy. The PSiO2 host matrix itself does not modify the QD properties. X-ray irradiation of the QD-PSiO2 films in air leads to an exponential decrease in QD emission intensity, an exponential blue-shift in peak emission energy, and substantially faster exciton decay rates with increasing exposure doses from 2.2 Mrad(SiO2) to 6.6 Mrad(SiO2). Gamma-ray irradiation of a QD-PSiO2 thin film at a total exposure dose of 700 krad(SiO2) in a nitrogen environment results in over 80% QD photodarkening but no concurrent blue-shift in peak emission energy due to a lack of photo-oxidative effects. Near-complete and partial reversal of irradiation-induced photodarkening was demonstrated on X-ray and gamma-ray irradiated samples, respectively, through the use of a surface re-passivating solution, suggesting that there are different contributing mechanisms responsible for photodarkening under different irradiation energies. This work contributes to improving the reliability and robustness of QD based heterogeneous devices that are exposed to high risk, high energy environments with the possibility of also developing QD-based large area, low-cost, re-useable, and flexible optical dosimeters.

0 citations0 reviewsNo code linkedOpen access