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Sharnali Islam

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cond-mat.mes-hall cond-mat.mtrl-sci physics.comp-ph

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preprint2014arXiv

Hysteresis-Free Nanosecond Pulsed Electrical Characterization of Top-Gated Graphene Transistors

We measure top-gated graphene field effect transistors (GFETs) with nanosecond-range pulsed gate and drain voltages. Due to high-k dielectric or graphene imperfections, the drain current decreases ~10% over time scales of ~10 us, consistent with charge trapping mechanisms. Pulsed operation leads to hysteresis-free I-V characteristics, which are studied with pulses as short as 75 ns and 150 ns at the drain and gate, respectively. The pulsed operation enables reliable extraction of GFET intrinsic transconductance and mobility values independent of sweep direction, which are up to a factor of two higher than those obtained from simple DC characterization. We also observe drain-bias-induced charge trapping effects at lateral fields greater than 0.1 V/um. In addition, using modeling and capacitance-voltage measurements we extract charge trap densities up to 10^12 1/cm^2 in the top gate dielectric (here Al2O3). Our study illustrates important time- and field-dependent imperfections of top-gated GFETs with high-k dielectrics, which must be carefully considered for future developments of this technology

preprint2012arXiv

Role of Joule Heating on Current Saturation and Transient Behavior of Graphene Transistors

We use simulations to examine current saturation in sub-micron graphene transistors on SiO2/Si. We find self-heating is partly responsible for current saturation (lower output conductance), but degrades current densities >1 mA/um by up to 15%. Heating effects are reduced if the supporting insulator is thinned, or in shorter channel devices by partial heat sinking at the contacts. The transient behavior of such devices has thermal time constants of ~30-300 ns, dominated by the thickness of the supporting insulator and that of device capping layers (a behavior also expected in ultrathin body SOI transistors). The results shed important physical insight into the high-field and transient behavior of graphene transistors.

preprint2012arXiv

Transport in Nanoribbon Interconnects Obtained from Graphene Grown by Chemical Vapor Deposition

We study graphene nanoribbon (GNR) interconnects obtained from graphene grown by chemical vapor deposition (CVD). We report low- and high-field electrical measurements over a wide temperature range, from 1.7 to 900 K. Room temperature mobilities range from 100 to 500 cm2/V/s, comparable to GNRs from exfoliated graphene, suggesting that bulk defects or grain boundaries play little role in devices smaller than the CVD graphene crystallite size. At high-field, peak current densities are limited by Joule heating, but a small amount of thermal engineering allows us to reach ~2 x 10^9 A/cm2, the highest reported for nanoscale CVD graphene interconnects. At temperatures below ~5 K, short GNRs act as quantum dots with dimensions comparable to their lengths, highlighting the role of metal contacts in limiting transport. Our study illustrates opportunities for CVD-grown GNRs, while revealing variability and contacts as remaining future challenges.

preprint2010arXiv

Influence of Internal Fields on the Electronic Structure in Self-Assembled InAs/GaAs Quantum Dots

Built-in electrostatic fields in Zincblende quantum dots originate mainly from - (1) the fundamental crystal atomicity and the interfaces between two dissimilar materials, (2) the strain relaxation, and (3) the piezoelectric polarization. In this paper, using the atomistic NEMO 3-D simulator, we study the origin and nature of the internal fields in InAs/GaAs quantum dots with three different geometries, namely, box, dome, and pyramid. We then calculate and delineate the impact of the internal fields in the one-particle electronic states in terms of shift in the conduction band energy states, anisotropy and non-degeneracy in the P level, and formation of mixed excited bound states. Models and approaches used in this study are as follow: (1) Valence force field (VFF) with strain-dependent Keating potentials for atomistic strain relaxation; (2) 20-band nearest-neighbor sp3d5s* tight-binding model for the calculation of single-particle energy states; and (3) For piezoelectricity, for the first time within the framework of sp3d5s* tight-binding theory, four different recently-proposed polarization models (linear and non-linear) have been considered in conjunction with an atomistic 3-D Poisson solver that also takes into account the image charge effects. Specifically, in contrast to recent studies on similar quantum dots, our calculations yield a non-vanishing net piezoelectric contribution to the built-in electrostatic field. Demonstrated also is the importance of full three-dimensional (3-D) atomistic material representation and the need for using realistically-extended substrate and cap layers (systems containing ~2 million atoms) in the numerical modeling of these reduced-dimensional quantum dots.