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Researcher profile

Sharat Chandra

Sharat Chandra contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.comp-phphysics.app-phphysics.atm-clus

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Published work

8 published item(s)

preprint2026arXiv

Spin-dependent Transport Studies of Fe/Mo$_x$Cr$_{1-x}$S$_2$/Fe Magnetic Tunnel Junction

Using Density functional theory and non-equilibrium Green's function formalism, spin dependent electron transport in Fe/Mo$_x$Cr$_{1-x}$S$_2$/Fe magnetic tunnel junction is studied. Spin transport for different thicknesses (1, 3, 5, and 7 layers) of the spacer MoS2 and for two different surface orientations of the Fe electrode, the Fe(001) and Fe(111) surface and with substitutional doping of 3d transition metal Cr at Mo site in MoS2 is investigated. The electronic structure of the heterostructure shows the presence of metal-induced states in the semiconducting MoS2 at the Fe/MoS2/Fe interface. The I-V characteristics of the junctions for the monolayer and three layer MoS2 spacer show linear behaviour due to the metallic nature of the junction. The tunnelling nature of the junction is observed for the thicker junctions with five-layer and seven layer spacers. With the introduction of magnetic impurity Cr, the tunnelling magnetoresistance for 7-layer junction is reduced. The Cr-defect states are observed below the conduction band, and the Cr-doped devices are stable up to a bias of 0.5V. Spin-transport through close-packed Fe(111) surface as electrode show low GMR value.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Self-healing in unpassivated and passivated CdTe nanostructures: structural stability and optical properties

We report the effects of passivation on the various properties like electronic structure, structural stability and optical properties of CdTe in the different nanostructure forms such as ultra-thin slabs, monolayers, nanorods and nanotubes. Further, based on these properties, the self-healing ability of each nanostructure has been predicted. The optical properties suggest that all of the passivated and specific unpassivated nanostructures are suitable for optoelectronic applications. The 2D system in <110> orientation and nanotube derived from the <111> monolayer show significant self-healing in the pristine structures.

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preprint2022arXiv

Structural stability, electronic structure and optical properties of dimension controlled self-assembled structures from clusters of cadmium telluride

We report the first principle theory-based study of stability, electronic structure and optical properties of cluster assembled materials in various 1D, 2D and 3D nanostructures using a cage-like Cd9Te9 cluster as the super-atom. The bulk 3D self-assemblies form in 2D stacked structures for different cubic lattices. The face centered stacking is the most stable as compared to the simple cubic, body centered and zinc blende type stackings. The 2D stacks are formed as cluster assembled monolayers and the monolayer derived from the face centered structure is most stable. Further, the cluster chains (or wires) with more number of inter-cluster bonds are also seen to be dynamically stable. The electronic structure, bandgap, dielectric constant and absorption spectra along with the phonon dispersions are discussed for these self-assembled nanostructures.

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preprint2022arXiv

Tunnel Barrier to Spin Filter: Electronic Transport Characteristics of Transition Metal Atom Encapsulated in Smallest Cadmium Telluride Cage

We report first principles theory-based comparative electronic transport studies performed for an atomic chain of Au, bare Cd9Te9 cage-like cluster and single transition metal (TM) (Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ru, Rh, Pd) atom encapsulated within the Cd9Te9 using Au(111) as electrodes. The bare cluster is semiconducting and acts as a tunnel barrier up to a particular applied bias and beyond that, the device has a linear current-voltage relationship. Several TM (Ti, V, Cr, Mn, Fe) encapsulated in the cage show half-metallic behavior and spin filtering effect in the I-V characteristics of the device. A detailed qualitative and quantitative analysis of I-V characteristics for metallic, semiconducting, and half-metallic nanostructures has been carried out.

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preprint2021arXiv

Developing atomistic glass models using potential-free Monte Carlo method: From simple to complex structures

We propose here a method to generate random networked amorphous structure using only readily available short-range properties like bond lengths, bond angles and connectivity of the constituents. This method is a variant of Monte-Carlo (MC) method wherein the basic constituents of an amorphous network i.e. rigid polyhedral units are connected randomly obeying certain steric constraints. The algorithm is designed to reproduce the medium-range order universally observed in glasses. The method somewhat resembles the reverse MC (RMC) method where a random move of an atom inside a box is accepted or rejected depending upon whether it decreases or increases the deviation from the experimentally observed features. However unlike RMC, this method does not demand large experimental sets of scattering data which in most cases is a priori not available for glasses. It rather relies on the stochasticity of MC method to produce glassy structures. The algorithm is first validated against SiO2 glass structure by comparing with the available structures from other methods and experimental data. The method is then extended for developing more complex Iron Phosphate Glass (IPG) structures and a comparison with existing models of IPG developed using quench-from-melt scheme implemented in classical Molecular Dynamics (MD) reveals that the method is extensible to complex glasses also. This study addresses the often-neglected issue of non-availability of correct starting structures in simulating glasses using MD or Density Functional Theory (DFT).

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preprint2021arXiv

Half-Metallicity in Smallest Cage-like Cluster of CdTe with Doping of Transition Metal Atoms

We report first principles theory based electronic structure studies of a semiconducting stoichiometric cage-like Cd9Te9 cluster. Substantial changes are observed in the electronic structure of the cluster on passivation with fictitious hydrogen atoms, in particular, widening of the energy gap between highest occupied molecular orbital and lowest unoccupied molecular orbital and enhancement in stability of cluster is seen. The cluster, when substitutionally mono-doped for a Cd by a set of 3d and 4d transition metal atoms (Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ru, Rh and Pd), is found to acquire polarization as seen from spin resolved density of states near Fermi level. Further, such mono-doping in passivated cluster shows half-metallic behavior. Mapping of partial density of states of each system on that of undoped cluster reveals additional levels caused by doping each TM atom separately. In the 3d elemental doping, Ti and Mn doping result into electron type doping whereas all other cases result into hole doped systems. For all the 4d elements studied, it is akin to the doping with holes for Cd substitution in the outer ring, whereas for Ru and Rh, there is electron type doping in case of substitution for Cd in central ring upon passivation. A comparison of partial density of states plots for bare and passivated clusters, on doping with transition metal atoms, suggests suitability of the cage-like cluster for spintronics applications.

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preprint2021arXiv

Strain Engineering of 2D-C3N5 Monolayer and its Application in Overall Water-Splitting: A Hybrid Density Functional Study

The recent experimental synthesis of 2D graphitic C3N5 has attracted lot of interests in its electronic and optical properties and its comparison with other graphitic C3N4 and C3N3. To this end, we performed DFT calculations using more accurate HSE06 functional and estimated the corresponding electronic properties. From a comparative study of the band structures of C3N3, C3N4, and C3N5, we found that, the electronic band-gap decreases as 3.24 eV (C3N3) > 2.81 eV (C3N4) > 2.19 eV (C3N5) with increase in the number of nitrogen atoms in the unit cell of these graphitic carbon nitrides. Further, the strain dependency of the band structure of 2D g-C3N5 under uniaxial and biaxial strain is performed using the same HSE- 06 functional. We found a systematic decrease of band-gap as strain increases. Out of the two types of strain, the biaxial strain has been found to be more efficient in modulating the band-gap. The effect of strain on the structure is also explored by analyzing the bond lengths and bond-angles as well as the charge density plots. Furthermore, we found that at a biaxial strain of 20% strain an interesting structural rearrangement occurs in 2D g-C3N5, which reults in a finite magnetic moment arising from the loss of spin-degeneracy of electronic levels. Finally, by studying the evolution of band-gap, band-alignments and optical absorption as a function of strain we are able to predict that biaxially compressed C3N5 with strain in the range 12-14% can be a promising photocatalyst in overall water-splitting with an excellent optical absorption in the visible light spectrum.

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preprint2011arXiv

Efficacy of surface error corrections to density functional theory calculations of vacancy formation energy in transition metals

We calculate properties like equilibrium lattice parameter, bulk modulus and monovacancy formation energy for nickel (Ni), iron (Fe) and chromium (Cr) using Kohn-Sham density functional theory (DFT). We compare relative performance of local density approximation (LDA) and generalized gradient approximation (GGA) for predicting such physical properties for these metals. We also make a relative study between two different flavors of GGA exchange correlation functional, namely, PW91 and PBE. These calculations show that there is a discrepancy between DFT calculations and experimental data. In order to understand this discrepancy in the calculation of vacancy formation energy, we introduce a correction for the surface intrinsic error corresponding to an exchange correlation functional using the scheme implemented by Mattsson et al. [Phys. Rev. B 73, 195123 (2006)] and compare the effectiveness of the correction scheme for Al and the 3d-transition metals.

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