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Researcher profile

Shamiul Alam

Shamiul Alam contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
Emerging Technologiesphysics.app-phCryptography and Security

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Published work

5 published item(s)

preprint2022arXiv

A Privacy-Protecting Framework of Autonomous Contact Tracing for SARS-CoV-2 and Beyond

Controlling the spread of infectious diseases, such as the ongoing SARS-CoV-2 pandemic, is one of the most challenging problems for human civilization. The world is more populous and connected than ever before, and therefore, the rate of contagion for such diseases often becomes stupendous. The development and distribution of testing kits cannot keep up with the demand, making it impossible to test everyone. The next best option is to identify and isolate the people who come in close contact with an infected person. However, this apparently simple process, commonly known as - contact tracing, suffers from two major pitfalls: the requirement of a large amount of manpower to track the infected individuals manually and the breach in privacy and security while automating the process. Here, we propose a Bluetooth based contact tracing hardware with anonymous IDs to solve both the drawbacks of the existing approaches. The hardware will be a wearable device that every user can carry conveniently. This device will measure the distance between two users and exchange the IDs anonymously in the case of a close encounter. The anonymous IDs stored in the device of any newly infected individual will be used to trace the risky contacts and the status of the IDs will be updated consequently by authorized personnel. To demonstrate the concept, we simulate the working procedure and highlight the effectiveness of our technique to curb the spread of any contagious disease.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

CMOS-Compatible Ising Machines built using Bistable Latches Coupled through Ferroelectric Transistor Arrays

Realizing compact and scalable Ising machines that are compatible with CMOS-process technology is crucial to the effectiveness and practicality of using such hardware platforms for accelerating computationally intractable problems. Besides the need for realizing compact Ising spins, the implementation of the coupling network, which describes the spin interaction, is also a potential bottleneck in the scalability of such platforms. Therefore, in this work, we propose an Ising machine platform that exploits the novel behavior of compact bi-stable CMOS-latches (cross-coupled inverters) as classical Ising spins interacting through highly scalable and CMOS-process compatible ferroelectric-HfO2-based Ferroelectric FETs (FeFETs) which act as coupling elements. We experimentally demonstrate the prototype building blocks of this system, and evaluate the behavior of the scaled system using simulations. We project that the proposed architecture can compute Ising solutions with an efficiency of ~1.04 x 10^8 solutions/W/second. Our work not only provides a pathway to realizing CMOS-compatible designs but also to overcoming their scaling challenges.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

CryoCiM: Cryogenic Compute-in-Memory based on the Quantum Anomalous Hall Effect

The scaling of the already-matured CMOS technology is steadily approaching its physical limit, motivating the quest for a suitable alternative. Cryogenic operation offers a promising pathway towards continued improvement in computing speed and energy efficiency without aggressive scaling. However, the memory wall bottleneck of the traditional von-Neumann architecture persists even at cryogenic temperature. That is where a compute-in-memory (CiM) architecture, that embeds computing within the memory unit, comes into play. Computations within the memory unit help reduce the expensive data transfer between the memory and the computing units. Therefore, CiM provides extreme energy efficiency that can enable lower cooling cost at cryogenic temperature. In this work, we demonstrate CryoCiM, a cryogenic compute-in-memory framework utilizing a non-volatile memory system based on the quantum anomalous Hall effect (QAHE). Our design can perform memory read/write, and universal binary logic operations (NAND, NOR, and XOR). We design a novel peripheral circuit assembly that can perform the read/write, and single-cycle in-memory logic operations. The utilization of a QAHE-based memory system promises robustness against process variations, through the usage of topologically protected resistive states for data storage. CryoCiM is the first step towards utilizing exclusively cryogenic phenomena to serve the dual purpose of storage and computation with ultra-low power (nano-watts) operations.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Memristor Compact Model with Oxygen-Vacancy Concentration as State Variable

We present a unique compact model for oxide memristors, based upon the concentration of oxygen vacancies as state variables. In this model, the increase (decrease) in oxygen vacancy concentration is similar in effect to the reduction (expansion) of the tunnel gap used as a state variable in existing compact models, providing a mechanism for the electronic current to increase (decrease) based upon the polarity of the applied voltage. Rate equations defining the dynamics of state variables are obtained from simplifications of a recent manuscript in which electronic processes (i.e., electron capture/emission) were combined with atomic processes (i.e., Frenkel pair generation/recombination, diffusion) stemming from the thermochemical model of dielectric breakdown. Central to the proposed model is the effect of the electron occupancy of oxygen vacancy traps on resistive switching dynamics. The electronic current is calculated considering Ohmic, band-to-band, and bound-to-band contributions. The model includes uniform self-heating with Joule-heating and conductive loss terms. The model is calibrated using experimental current-voltage characteristics for HfO2 memristors with different electrode materials. Though a general model is presented, a delta-shaped density of states profile for oxygen vacancies is found capable of accurately representing experimental data while providing a minimal description of bound to band transitions. The model is implemented in Verilog-A and tested using read/write operations in a 4x4 1T1R nonvolatile memory array to evaluate its ability to perform circuit simulations of practical interest. A particular benefit is that the model does not make strong assumptions regarding filament geometry of which scant experimental-evidence exists to support.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A Non-Volatile Cryogenic Random-Access Memory Based on the Quantum Anomalous Hall Effect

The interplay between ferromagnetism and topological properties of electronic band structures leads to a precise quantization of Hall resistance without any external magnetic field. This so-called quantum anomalous Hall effect (QAHE) is born out of topological correlations, and is oblivious of low-sample quality. It was envisioned to lead towards dissipationless and topologically protected electronics. However, no clear framework of how to design such an electronic device out of it exists. Here we construct an ultra-low power, non-volatile, cryogenic memory architecture leveraging the QAHE phenomenon. Our design promises orders of magnitude lower cell area compared with the state-of-the-art cryogenic memory technologies. We harness the fundamentally quantized Hall resistance levels in moiré graphene heterostructures to store non-volatile binary bits (1, 0). We perform the memory write operation through controlled hysteretic switching between the quantized Hall states, using nano-ampere level currents with opposite polarities. The non-destructive read operation is performed by sensing the polarity of the transverse Hall voltage using a separate pair of terminals. We custom design the memory architecture with a novel sensing mechanism to avoid accidental data corruption, ensure highest memory density and minimize array leakage power. Our design is transferrable to any material platform exhibiting QAHE, and provides a pathway towards realizing topologically protected memory devices.

0 citations0 reviewsNo code linkedOpen access