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Researcher profile

Sergio Pezzini

Sergio Pezzini contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-phphysics.optics

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Published work

8 published item(s)

preprint2022arXiv

Moiré-Induced Transport in CVD-Based Small-Angle Twisted Bilayer Graphene

To realize the applicative potential of 2D twistronic devices, scalable synthesis and assembly techniques need to meet stringent requirements in terms of interface cleanness and twist-angle homogeneity. Here, we show that small-angle twisted bilayer graphene assembled from separated CVD-grown graphene single-crystals can ensure high-quality transport properties, determined by a device-scale-uniform moireé potential. Via low-temperature dual-gated magnetotransport, we demonstrate the hallmarks of a $2.4^\circ$ -twisted superlattice, including tunable regimes of interlayer coupling, reduced Fermi velocity, large interlayer capacitance, and density-independent Brown-Zak oscillations. The observation of these moiré-induced electrical transport features establishes CVD-based twisted bilayer graphene as an alternative to 'tear-and-stack' exfoliated flakes for fundamental studies, while serving as a proof-of-concept for future large-scale assembly.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Parallel transport and layer-resolved thermodynamic measurements in twisted bilayer graphene

We employ dual-gated 30°-twisted bilayer graphene to demonstrate simultaneous ultra-high mobility and conductivity (up to 40 mS at room temperature), unattainable in a single-layer of graphene. We find quantitative agreement with a simple phenomenology of parallel conduction between two pristine graphene sheets, with a gate-controlled carrier distribution. Based on the parallel transport mechanism, we then introduce a method for in situ measurements of the chemical potential of the two layers. This twist-enabled approach, neither requiring a dielectric spacer, nor separate contacting, has the potential to greatly simplify the measurement of thermodynamic quantities in graphene-based systems of high current interest.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Wafer-scale integration of graphene-based photonic devices

Graphene and related materials can lead to disruptive advances in next generation photonics and optoelectronics. The challenge is to devise growth, transfer and fabrication protocols providing high (>5,000 cm2 V-1 s-1) mobility devices with reliable performance at the wafer scale. Here, we present a flow for the integration of graphene in photonics circuits. This relies on chemical vapour deposition (CVD) of single layer graphene (SLG) matrices comprising up to ~12000 individual single crystals (SCs), grown to match the geometrical configuration of the devices in the photonic circuit. This is followed by a transfer approach which guarantees coverage over ~80% of the device area, and integrity for up to 150 mm wafers, with room temperature mobility ~5000 cm2 V-1 s-1. We use this process flow to demonstrate double SLG electro-absorption modulators with modulation efficiency ~0.25, 0.45, 0.75, 1 dB V-1 for device lengths ~30, 60, 90, 120 μm. The data rate is up to 20 Gbps. Encapsulation with single-layer hBN is used to protected SLG during plasma-enhanced CVD of Si3N4, ensuring reproducible device performance. Our full process flow (from growth to device fabrication) enables the commercial implementation of graphene-based photonic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

30$^\circ$-twisted bilayer graphene quasicrystals from chemical vapor deposition

The artificial stacking of atomically thin crystals suffers from intrinsic limitations in terms of control and reproducibility of the relative orientation of exfoliated flakes. This drawback is particularly severe when the properties of the system critically depend on the twist angle, as in the case of the dodecagonal quasicrystal formed by two graphene layers rotated by 30$^\circ$. Here we show that large-area 30$^\circ$-rotated bilayer graphene can be grown deterministically by chemical vapor deposition on Cu, eliminating the need of artificial assembly. The quasicrystals are easily transferred to arbitrary substrates and integrated in high-quality hBN-encapsulated heterostructures, which we process into dual-gated devices exhibiting carrier mobility up to $10^5$ cm$^2$/Vs. From low-temperature magnetotransport, we find that the graphene quasicrystals effectively behave as uncoupled graphene layers, showing 8-fold degenerate quantum Hall states: this result indicates that the Dirac cones replica detected by previous photo-emission experiments do not contribute to the electrical transport.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

High-quality electrical transport using scalable CVD graphene

Producing and manipulating graphene on fab-compatible scale, while maintaining its remarkable carrier mobility, is key to finalize its technological application. We show that a large-scale approach (chemical vapor deposition on Cu followed by polymer-mediated semi-dry transfer) yields single-layer graphene crystals fully comparable, in terms of electronic transport, to micro-mechanically exfoliated flakes. hBN is used to encapsulate the graphene crystals $-$ without taking part to their detachment from the growth catalyst $-$ and study their intrinsic properties in field-effect devices. At room temperature, the electron-phonon coupling sets the mobility to $\sim1.3 \times10^5$ cm$^2$V$^{-1}$s$^{-1}$ at $\sim10^{11}$ cm$^{-2}$ concentration. At cryogenic temperatures, the mobility ($ > 6\times10^5$ cm$^2$V$^{-1}$s$^{-1}$ at $\sim10^{11}$ cm$^{-2}$) is limited by the devices&#39; physical edges, and charge fluctuations $ < 7\times10^9$ cm$^{-2}$ are detected. Under perpendicular magnetic fields, we observe early onset of Landau quantization ($B\sim50$ mT) and signatures of electronic correlation, including the fractional quantum Hall effect.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

High-speed double layer graphene electro-absorption modulator on SOI waveguide

We report on a C-band double layer graphene electro-absorption modulator on a passive SOI platform showing 29GHz 3dB-bandwith and NRZ eye-diagrams extinction ratios ranging from 1.7 dB at 10 Gb/s to 1.3 dB at 50 Gb/s. Such high modulation speed is achieved thanks to the quality of the CVD pre-patterned single crystal growth and transfer on wafer method that permitted the integration of high-quality scalable graphene and low contact resistance. By demonstrating this high-speed CVD graphene EAM modulator integrated on Si photonics and the scalable approach, we are confident that graphene can satisfy the main requirements to be a competitive technology for photonics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Synthesis of large-area rhombohedral few-layer graphene by chemical vapor deposition on copper

Rhombohedral-stacked few-layer graphene (FLG) has been receiving an ever-increasing attention owing to its peculiar electronic properties that could lead to enticing phenomena such as superconductivity and magnetic ordering. Up to now, experimental studies on such material have been mainly limited by the difficulty in isolating it in thickness exceeding 3 atomic layers with device-compatible size. In this work, rhombohedral graphene with thickness up to 9 layers and areas up to ~50 micrometers square is grown via chemical vapor deposition (CVD) on suspended Cu foils and transferred onto target substrates via etch-free delamination. The domains of rhombohedral FLG are identified by Raman spectroscopy and are found to alternate with domains of Bernal-stacked FLG within the same crystal in a stripe-like configuration. A combined analysis of micro-Raman mapping, atomic force microscopy and optical microscopy indicates that the formation of rhombohedral-stacked FLG is strongly correlated to the copper substrate morphology. Cu step bunching results in bending of FLG and interlayer displacement along preferential crystallographic orientations, as determined experimentally by electron microscopy, thus inducing the stripe-like domains. The growth and transfer of rhombohedral FLG with the reported thickness and size shall facilitate the observation of predicted unconventional physics and ultimately add to its technological relevance.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides

We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene-polymer-graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and to generate a controllable p-n junction. Both graphene layers are fabricated using aligned single-crystal graphene arrays grown by chemical vapor deposition. The use of PVA yields a low charge inhomogeneity 8 x 10$^{10}$ $cm^{-2}$ at the charge neutrality point, and a large Seebeck coefficient 140 $μ$V K$^{-1}$, enhancing the PTE effect. Our devices are the fastest GPDs operating with zero dark current, showing a flat frequency response up to 67 GHz without roll-off. This performance is achieved on a passive, low-cost, photonic platform, and does not rely on nanoscale plasmonic structures. This, combined with scalability and ease of integration, makes our GPDs a promising building block for next-generation optical communication devices.

0 citations0 reviewsNo code linkedOpen access