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Sergio L. Morelhao

Sergio L. Morelhao appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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2 published item(s)

preprint2021arXiv

Intrinsic Spatial Resolution Limit in Analyzer-Based X-Ray Phase Contrast Imaging Technique

Dynamical diffraction effects always play a role when working with perfect single crystals. The penetration of X-rays respect to the surface normal during diffraction (extinction depth, $1/σ_e$) in perfect single crystals does not have a constant value. The value changes for different angular positions on the crystal diffraction condition. For higher X-ray energies this value can change from few micrometers to tens of millimeters for each different crystal angular position in the small angular range of the diffraction condition. This effect may spread a single point in the object (sample) as a line in the image detector, especially if the crystal is set (or if the sample angularly deviates the beam) at lower diffraction angle positions, where the surface component of X-ray penetration can achieve huge values. Then, for imaging experiments where the dynamical diffraction occurs, such intrinsic property can affect the image resolution. We have modeled and experimentally checked such a dynamical diffraction property using, as example, an Analyzer-based X-ray phase contrast imaging setup (ABI) at two different X-ray energies: 10.7 keV and 18 keV. The results show that our theoretical model is consistent with the measured results. For higher energies the blur effect is enhanced and intrinsically limits the image spatial resolution.

preprint2020arXiv

Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films

Epitaxial films of bismuth telluride topological insulators have received increasing attention due to potential applications in spintronic and quantum computation. One of the most important properties of epitaxial films is the presence of interface defects due to lateral lattice mismatch since electrically active defects can drastically compromise device performance. By describing hybrid reflections in hexagonal bismuth telluride films on cubic substrates, in-plane lattice mismatches were characterized with accuracy at least 20 times better than using other X-ray diffraction methods, providing clear evidence of 0.007\% lateral lattice mismatch, consistent with stress relaxation associated with van der Waals gaps in the film structure.