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Researcher profile

Sergio Ciuchi

Sergio Ciuchi contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.dis-nncond-mat.mes-hallcond-mat.stat-mechcond-mat.str-elphysics.chem-phquant-ph

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Published work

5 published item(s)

preprint2014arXiv

Impact of quantized vibrations on the efficiency of interfacial charge separation in photovoltaic devices

We demonstrate that charge separation at donor-acceptor interfaces is a complex process that is controlled by the combined action of Coulomb binding for electron-hole pairs and partial relaxation due to quantized phonons. A joint electron-vibration quantum dynamical study reveals that high energy vibrations sensitively tune the charge transfer probability as a function of time and injection energy, due to polaron formation. These results have bearings for the optimization of energy transfer both in organic and quantum dot photovoltaics, as well as in biological light harvesting complexes.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Phenomenological model for charge dynamics and optical response of disordered systems: application to organic semiconductors

We provide a phenomenological formula which describes the low-frequency optical absorption of charge carriers in disordered systems with localization. This allows to extract, from experimental data on the optical conductivity, the relevant microscopic parameters determining the transport properties, such as the carrier localization length and the elastic and inelastic scattering times. This general formula is tested and applied here to organic semiconductors, where dynamical molecular disorder is known to play a key role in the transport properties. The present treatment captures the basic ideas underlying the recently proposed transient localization scenario for charge transport, extending it from the d.c. mobility to the frequency domain. When applied to existing optical measurements in rubrene FETs, our analysis provides quantitative evidence for the transient localization phenomenon. Possible applications to other disordered electronic systems are briefly discussed.

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preprint2014arXiv

Robustness against Disorder of Relativistic Spectral Properties in Chalcogenide Alloys

In order to carefully address the interplay between substitutional disorder and spin-orbit-coupling in IV-VI alloys, we propose a novel theoretical approach that integrates the reliability of plane-wave based density-functional theory beyond the local-density approximation with the Coherent Potential Approximation. By applying the proposed method to ternary chalcogenide alloys, we predict a substantial robustness of spectral features close to the Fermi energy against substitutional disorder. Supplementing our first-principles calculations with the analysis of the $k \cdot p$ model for rock-salt chalcogenides, we show that the disorder self-energy is vanishingly small close to the band gap, thus allowing for bulk Rashba-like spin splitting to be observed in ferroelectric alloys, such as PbS$_x$Te$_{1-x}$, and protecting the band-character inversion related to the topological transition in the recently discovered Topological Crystalline Insulator Pb$_{1-x}$Sn$_x$Te.

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preprint2013arXiv

Tailoring the molecular structure to suppress extrinsic disorder in organic transistors

In organic field-effect transistors, the structure of the constituent molecules can be tailored to minimize the disorder experienced by charge carriers. Experiments on two perylene derivatives show that disorder can be suppressed by attaching longer core substituents - thereby reducing potential fluctuations in the transistor channel and increasing the mobility at low temperature - without altering the intrinsic transport properties.

0 citations0 reviewsNo code linkedOpen access
preprint2000arXiv

The induced charge in a Frohlich polaron: Sum rule and spatial extent

Within the path integral formalism, we derive exact expressions for correlation functions measuring the lattice charge induced by an electron and associated polarization in Frohlich polaron problem. We prove that a sum rule for the total induced charge, already obtained within approximated approaches is indeed exact. As a consequence the total induced charge is shown rigorously to be temperature independent. In addition we perform path integral Monte Carlo calculations of the correlation functions and we compare with variational results based on Feynman method. As the temperature increases the polaron radius decreases. On the other hand at high temperatures the electron motion is not hindered by the lattice. These apparently contradictory results are discussed.

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