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Researcher profile

Sergey V Lotkhov

Sergey V Lotkhov contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.othercond-mat.supr-con

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Published work

3 published item(s)

preprint2013arXiv

Ultra-high-ohmic microstripline resistors for Coulomb blockade devices

In this paper, we report on the fabrication and the low-temperature characterization of extremely high-ohmic microstrip resistors made of a thin film of weakly oxidized titanium. Nearly linear voltage-current characteristics were measured at temperatures down to $T \sim \unit[20]{mK}$ for films with sheet resistivity up to as high as $\sim \unit[7]{kΩ}$, i.e. about an order of magnitude higher than our previous findings for weakly oxidized Cr. Our analysis indicates that such an improvement can help to create an advantageous high-impedance environment for different Coulomb blockade devices. Further properties of the Ti film addressed in this work show a promise of low-noise behavior of the resistors when applied in different realizations of the quantum standard of current.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electron Counting Capacitance Standard with an improved five-junction R-pump

The Electron Counting Capacitance Standard currently pursued at PTB aims to close the Quantum Metrological Triangle with a final precision of a few parts in 10^7. This paper reports the considerable progress recently achieved with a new generation of single-electron tunnelling devices. A five-junction R-pump was operated with a relative charge transfer error of five electrons in 10^7, and was used to successfully perform single-electron charging of a cryogenic capacitor. The preliminary result for the single-electron charge quantum has an uncertainty of less than two parts in 10^6 and is consistent with the value of the elementary charge.

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preprint2010arXiv

Single-charge escape processes through a hybrid turnstile in a dissipative environment

We have investigated the static, charge-trapping properties of a hybrid superconductor---normal metal electron turnstile embedded into a high-ohmic environment. The device includes a local Cr resistor on one side of the turnstile, and a superconducting trapping island on the other side. The electron hold times, t ~ 2-20s, in our two-junction circuit are comparable with those of typical multi-junction, N >= 4, normal-metal single-electron tunneling devices. A semi-phenomenological model of the environmental activation of tunneling is applied for the analysis of the switching statistics. The experimental results are promising for electrical metrology.

0 citations0 reviewsNo code linkedOpen access