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Researcher profile

Sergey V. Levchenko

Sergey V. Levchenko contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.comp-ph

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Published work

3 published item(s)

preprint2022arXiv

Hierarchical symbolic regression for identifying key physical parameters correlated with bulk properties of perovskites

Symbolic regression identifies key physical parameters describing materials properties by uncovering correlations as nonlinear analytical expressions. However, the pool of expressions grows rapidly with complexity, compromising its efficiency. We tackle this challenge by a hierarchical approach: identified expressions are used as input parameters for obtaining more complex expressions. Crucially, this framework can transfer knowledge among properties, highlighting physical relationships. We demonstrate this strategy by using the Sure-Independence-Screening-and-Sparsifying-Operator (SISSO) approach to identify expressions correlated with the lattice constant and cohesive energy, which are then used to model the bulk modulus of ABO3 perovskites.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Pentacene and Tetracene Molecules and Films on H/Si(111): Level Alignment from Hybrid Density Functional Theory

The electronic properties of hybrid organic-inorganic semiconductor interfaces depend strongly on the alignment of the electronic carrier levels in the organic/inorganic components. In the present work, we address this energy level alignment from first principles theory for two paradigmatic organic-inorganic semiconductor interfaces, the singlet fission materials tetracene and pentacene on H/Si(111), using all-electron hybrid density functional theory. For isolated tetracene on H/Si(111), a type I-like heterojunction (lowest-energy electron and hole states on Si) is found. For isolated pentacene, the molecular and semiconductor valence band edges are degenerate. For monolayer films, we show how to construct supercell geometries with up to 1,192 atoms, which minimize the strain between the inorganic surface and an organic monolayer film. Based on these models, we predict the formation of type II heterojunctions (electron states on Si, hole-like states on the organic species) for both acenes, indicating that charge separation at the interface between the organic and inorganic components is favored. The paper discusses the steps needed to find appropriate low-energy interface geometries for weakly bonded organic molecules and films on inorganic substrates from first principles, a necessary prerequisite for any computational level alignment prediction.

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preprint2012arXiv

Rigorous definition of oxidation states of ions in solids

We present justification and rigorous procedure for electron partitioning among atoms in extended systems. The method is based on wavefunction topology and the modern theory of polarization, rather than charge density partitioning or wavefunction projection, and, as such, re-formulates the concept of oxidation state without assuming real-space charge transfer between atoms. This formulation provides rigorous electrostatics of finite extent solids, including films and nanowires.

0 citations0 reviewsNo code linkedOpen access