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Sepehr Benis

Sepehr Benis contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Extremely Large Nondegenerate Nonlinear Index and Phase Shift in Epsilon-Near-Zero Materials

Epsilon-near-zero (ENZ) materials have emerged as viable platforms for strong nonlinear optical (NLO) interactions. The NLO phase shift in materials exhibiting an ENZ condition is extremely large, however, direct experimental measurements of the magnitude and time dynamics of this phenomenon, particularly nondegenerate NLO phase shifts, have so far been lacking. Here, we directly measure the NLO phase shift of an Indium-Tin-Oxide (ITO) thin film using three different techniques. By characterizing the excitation-induced, time resolved Beam Deflection (BD) of a probe beam, we measure the nondegenerate NLO effects, allowing a separate determination of the effects of excitation and probe wavelengths on the NLO phase shift as they are varied across the ENZ region. These experiments reveal that having the probe pulse centered at ENZ greatly contributes to this enhancement; however, the NLO phase shift is less sensitive to the excitation wavelength, which only slightly enhances the nonlinearity for obliquely incident TM-polarized light. We also find that the spectral shift of the probe pulse induced by the excitation follows both the magnitude and time dynamics of the NLO phase shift measured via the BD experiments. We observe large, ultrafast cross-phase modulation in agreement with a redistribution of carriers in the conduction band. Finally using the Z-Scan method, we measure the degenerate nonlinear refraction at ENZ near normal incidence. The results of all three measurements agree, revealing a gigantic sub-picosecond NLO phase shift in ITO. At its largest, we consistently measure an effective induced index change that is greater than the linear index.

preprint2021arXiv

Refraction of space-time wave packets in a dispersive medium

Space-time (ST) wave packets are a class of pulsed optical beams whose spatio-temporal spectral structure results in propagation invariance, tunable group velocity, and fascinating refractive phenomena. Here, we investigate the refraction of ST wave packets at a planar interface between two dispersive, homogeneous, isotropic media. We formulate a new refractive invariant for ST wave packets in this configuration, from which we obtain a law of refraction that determines the change in their group velocity across the interface. We verify this new refraction law in ZnSe and CdSe, both of which manifest large chromatic dispersion at near-infrared frequencies in the vicinity of their band edges. ST wave packets can thus be a tool in nonlinear optics for bridging large group-velocity mismatches in highly dispersive scenarios.

preprint2020arXiv

Three-Photon Absorption Spectra and Bandgap Scaling in Direct-Gap Semiconductors

This paper presents three-photon absorption (3PA) measurement results for nine direct-gap semiconductors, including full 3PA spectra for ZnSe, ZnS, and GaAs. These results, along with our theory of 3PA using an 8-band Kane model (4 bands with double spin degeneracy), help to explain the significant disagreements between experiments and theory in the literature to date. 3PA in the 8-band model exhibits quantum interference between the various possible pathways that is not observed in previous 2-band theories. We present measurements of degenerate 3PA coefficients in InSb, GaAs, CdTe, CdSe, ZnTe, CdS, ZnSe, ZnO, and ZnS. We examine bandgap, Eg, scaling using 2-band tunneling and perturbation theories that show agreement with the predicted Eg^-7 dependence; however, For those semiconductors for which we measured full 3PA spectra, we observe significant discrepancies with both 2-band theories. On the other hand, our 8-band model shows excellent agreement with the spectral data. We then use our 8-band theory to predict the 3PA spectra for 15 different semiconductors in their zincblende form. These results allow prediction and interpretation of the 3PA coefficients for various narrow to wide bandgap semiconductors.