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Sebastian Diebold

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2 publications

preprint2013arXiv

A setup for soft proton irradiation of X-ray detectors for future astronomical space missions

Protons that are trapped in the Earth's magnetic field are one of the main threats to astronomical X-ray observatories. Soft protons, in the range from tens of keV up to a few MeV, impinging on silicon X-ray detectors can lead to a significant degradation of the detector performance. Especially in low earth orbits an enhancement of the soft proton flux has been found. A setup to irradiate detectors with soft protons has been constructed at the Van-de-Graaff accelerator of the Physikalisches Institut of the University of Tübingen. Key advantages are a high flux uniformity over a large area, to enable irradiations of large detectors, and a monitoring system for the applied fluence, the beam uniformity, and the spectrum, that allows testing of detector prototypes in early development phases, when readout electronics are not yet available. Two irradiation campaigns have been performed so far with this setup. The irradiated detectors are silicon drift detectors, designated for the use on-board the LOFT space mission. This paper gives a description of the experimental setup and the associated monitoring system.

preprint2011arXiv

Properties of the electron-doped infinite-layer superconductor Sr1−x_{1-x}Lax_{x}CuO2_{2} epitaxially grown by pulsed laser deposition

Thin films of the electron-doped infinite-layer cuprate superconductor Sr1−x_{1-x}Lax_xCuO2_2 (SLCO) with doping x≈0.15x \approx 0.15 were grown by means of pulsed laser deposition. (001)-oriented KTaO3_3 and SrTiO3_3 single crystals were used as substrates. In case of SrTiO3_3, a BaTiO3_3 thin film was deposited prior to SLCO, acting as buffer layer providing tensile strain to the SLCO film. To induce superconductivity, the as-grown films were annealed under reducing conditions, which will be described in detail. The films were characterized by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, Rutherford backscattering spectroscopy, and electric transport measurements at temperatures down to T=4.2 T = 4.2\,K. We discuss in detail the influence of different process parameters on the final film properties.

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