Researcher profile

Scott K. Cushing

Scott K. Cushing contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci physics.chem-ph physics.optics quant-ph

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preprint2026arXiv

Entangled photon triplets using lithium niobate nanophotonics

Multiphoton states are needed for quantum communication and computation. Multiphoton states are significantly more difficult to generate than one- and two-photon states because two individual down-conversion processes must be cascaded. Only efficiencies of $<100$ Hz/mW have been reported to date. We integrate two down-converters on the same thin-film lithium niobate waveguide, significantly enhancing the cascaded process efficiency to $237 \pm 36$ kHz/mW. The measured $4.4 \times 10^{-5}$ probability of the second down-converter, which sets the limit on detectable triplet rates, exceeds those of previous triplet sources by an order of magnitude and demonstrates a path towards MHz rates of triplets for quantum applications.

preprint2025arXiv

Imaging nanoscale photocarrier traps in solar water-splitting catalysts

Defects trap photocarriers and hinder solar water splitting. The nanoscale photocarrier transport, trapping, and recombination mechanisms are usually inferred from ensemble-averaged measurements and remain elusive. Because an individual high-performing nanoparticle photocatalyst may outperform the ensemble average, design rules that would otherwise enhance catalytic efficiency remain unclear. Here, we introduce photomodulated electron energy-loss spectroscopy (EELS) in an optically coupled scanning transmission electron microscope (STEM) to map photocarrier localization. Using rhodium-doped strontium titanate (SrTiO3:Rh) solar water-splitting nanoparticles, we directly image the carrier densities concentrated at oxygen-vacancy surface trap states. This is achieved by separating photothermal heating from photocarrier populations through experimental and computational analyses of low-loss spectra. Photomodulated STEM-EELS enables angstrom-scale imaging of defect-induced photocarrier traps and their impact on photocatalytic efficiency.

preprint2022arXiv

Ab Initio Calculations of XUV Ground and Excited States for First-Row Transition Metal Oxides

Transient X-ray spectroscopies have become ubiquitous in studying photoexcited dynamics in solar energy materials due to their sensitivity to carrier occupations and local chemical or structural dynamics. The interpretation of solid-state photoexcited dynamics, however, is complicated by the core-hole perturbation and the resulting many-body dynamics. Here, an ab initio, Bethe-Salpeter equation (BSE) approach is developed that can incorporate photoexcited state effects for solid-state materials. The extreme ultraviolet (XUV) absorption spectra for the ground, photoexcited, and thermally expanded states of first row transition metal oxides - $TiO_2, α-Cr_2O_3, β-MnO_2, α-Fe_2O_3, Co_3O_4, NiO, CuO, and ZnO$ - are calculated to demonstrate the accuracy of this approach. The theory is used to decompose the core-valence excitons into the separate components of the X-ray transition Hamiltonian for each of the transition metal oxides investigated. The decomposition provides a physical intuition about the origins of XUV spectral features as well as how the spectra will change following photoexcitation. The method is easily generalized to other K, L, M, and N edges to provide a general approach for analyzing transient X-ray absorption or reflection data.

preprint2022arXiv

Ab Initio Prediction of Excited State and Polaron Effects in Transient XUV Measurements of $α$-Fe$_2$O$_3$

Transient X-ray and extreme ultraviolet (XUV) spectroscopies have become invaluable tools for studying photoexcited dynamics due to their sensitivity to carrier occupations and local chemical or structural changes. One of the most studied mate-rials using transient XUV spectroscopy is $α$-Fe$_2$O$_3$ because of its rich photoexcited dynamics, including small polaron formation. The interpretation of carrier and polaron effects in $α$-Fe$_2$O$_3$ is currently done using a semi-empirical method that is not transferrable to most materials. Here, an ab initio, Bethe-Salpeter equation (BSE) approach is developed that can incorporate photoexcited state effects for arbitrary materials systems. The accuracy of this approach is proven by calculating the XUV absorption spectra for the ground, photoexcited, and polaron states of $α$-Fe$_2$O$_3$. Furthermore, the theoretical approach allows for the projection of the core-valence excitons and different components of the X-ray transition Hamiltonian onto the band structure, providing new insights into old measurements. From this information, a physical intuition about the origins and nature of the transient XUV spectra can be built. A route to extracting electron and hole energies is even shown possible for highly angular momentum split XUV peaks. This method is easily generalized to K, L, M, and N edges to provide a general approach for analyzing transient X-ray absorption or reflection data.

preprint2021arXiv

Electron Thermalization and Relaxation in Laser-Heated Nickel by Few-Femtosecond Core-Level Transient Absorption Spectroscopy

Direct measurements of photoexcited carrier dynamics in nickel are made using few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy at the nickel M$_{2,3}$ edge. It is observed that the core-level absorption lineshape of photoexcited nickel can be described by a Gaussian broadening ($σ$) and a red shift ($ω_{s}$) of the ground state absorption spectrum. Theory predicts, and the experimental results verify that after initial rapid carrier thermalization, the electron temperature increase ($ΔT$) is linearly proportional to the Gaussian broadening factor $σ$, providing quantitative real-time tracking of the relaxation of the electron temperature. Measurements reveal an electron cooling time for 50 nm thick polycrystalline nickel films of 640$\pm$80 fs. With hot thermalized carriers, the spectral red shift exhibits a power-law relationship with the change in electron temperature of $ω_{s}\proptoΔT^{1.5}$. Rapid electron thermalization via carrier-carrier scattering accompanies and follows the nominal 4 fs photoexcitation pulse until the carriers reach a quasi-thermal equilibrium. Entwined with a <6 fs instrument response function, carrier thermalization times ranging from 34 fs to 13 fs are estimated from experimental data acquired at different pump fluences and it is observed that the electron thermalization time decreases with increasing pump fluence. The study provides an initial example of measuring electron temperature and thermalization in metals in real time with XUV light, and it lays a foundation for further investigation of photoinduced phase transitions and carrier transport in metals with core-level absorption spectroscopy.

preprint2020arXiv

Entangled light-matter interactions and spectroscopy

Entangled photons exhibit non-classical light-matter interactions that create new opportunities in materials and molecular science. For example, in entangled two-photon absorption, the intensity-dependence scales linearly as if only one photon was present. The entangled two-photon absorption cross section approaches but does not match the one-photon absorption cross section. The entangled two photon cross section also does not follow classical two photon molecular design motifs. Questions such as these seed the rich but nascent field of entangled light-matter interactions. In this perspective, we use the experimental developments in entangled photon spectroscopy to outline the current status of the field. Now that the fundamental tools are outlined, it is time to start the exploration of how materials, molecules, and devices can control or utilize interactions with entangled photons.

preprint2013arXiv

Terahertz Waveguiding in Silicon-Core Fibers

We propose the use of a silicon-core optical fiber for terahertz (THz) waveguide applications. Finite-difference time-domain simulations have been performed based on a cylindrical waveguide with a silicon core and silica cladding. High-resistivity silicon has a flat dispersion over a 0.1 - 3 THz range, making it viable for propagation of tunable narrowband CW THz and possibly broadband picosecond pules of THz radiation. Simulations show the propagation dynamics and the integrated intensity, from which transverse mode profiles and absorption lengths are extraced. It is found that for 140 - 250 micron core diameters the mode is primarily confined to the core, such that the overall absorbance is only slightly less than in bulk polycrystalline silicon.