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Researcher profile

Sayaka Yamamoto

Sayaka Yamamoto contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.supr-concond-mat.mtrl-sciphysics.app-ph

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Published work

4 published item(s)

preprint2020arXiv

Demonstration of Electric Double Layer Gating under High Pressure by the Development of Field-Effect Diamond Anvil Cell

We have developed an approach to control the carrier density in various material under high pressure by the combination of an electric double layer transistor (EDLT) with a diamond anvil cell (DAC). In this study, this EDLT-DAC was applied to a Bi thin film, and here we report the field-effect under high pressure in the material. Our EDLT-DAC is a promising device for exploring unknown physical phenomena such as high transition-temperature superconductivity (HTS).

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Crystal Size Improvement of Bi-based Superconducting Whiskers under Stress-controlled Condition

Using stress-controlled amorphous precursors, we have successfully grown large $Bi_{2}$$Sr_{2}$$Ca_{\textit{n}-1}$$Cu_{\textit{n}}$$O_{\textit{y}}$ (Bi-based) high-transition temperature superconducting whiskers. Especially, under a high compressive stress attained by 1 GPa pelletizing, the crystal size of a whisker was significantly enhanced up to 9.5 mm length (growth period: 96 h) which is 2.4 times larger than that of the conventional amorphous-precursors method. In addition, by using the stress-controlled precursors, the number of the obtained Bi-based whiskers were also increased by a factor of 1.8.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Data-driven Exploration of Pressure-Induced Superconductivity in AgIn$_{5}$Se$_{8}$

Candidates compounds for new thermoelectric and superconducting materials, which have narrow band gap and flat bands near band edges, were exhaustively searched by a high-throughput first-principles calculation from an inorganic materials database named AtomWork. We focused on AgIn$_{5}$Se$_{8}$ which has high density of state near the Fermi level. AgIn$_{5}$Se$_{8}$ was successfully synthesized as single crystals using a melt and slow cooling method. The single-crystal X-ray diffraction analysis revealed the obtained crystal is high quality without deficiencies. The valence states in AgIn$_{5}$Se$_{8}$ were determined to be Ag1+, In3+ and Se2- in accordance with a formal charge by the core level X-ray photoelectron spectroscopy analysis. The electrical resistance was evaluated under high pressure using a diamond anvil cell with boron-doped diamond electrodes. Although the sample was insulator with a resistance of above 40 MΩ at ambient pressure, the resistance markedly decreased with increase of the pressure, and a pressure-induced superconducting transition was discovered at 3.4 K under 52.5 GPa. The transition temperature increased up to 3.7 K under further pressure of 74.0 GPa.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Mask-less Patterning of Gallium-irradiated Superconducting Silicon Using Focused Ion Beam

A direct patterning technique of gallium-irradiated superconducting silicon has been established by focused gallium-ion beam without any mask-based lithography process. The electrical transport measurements for line and square shaped patterns of gallium-irradiated silicon were carried out under self-field and magnetic field up to 7 T. Sharp superconducting transitions were observed in both patterns at temperature of 7 K. The line pattern exhibited a signature of higher onset temperature above 10 K. A critical dose amount to obtain the superconducting gallium-irradiated silicon was investigated by the fabrication of various samples with different doses. This technique can be used as a simple fabrication method for superconducting device.

0 citations0 reviewsNo code linkedOpen access