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Satoru Mima

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physics.ins-det astro-ph.IM

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preprint2022arXiv

Characterization of two-level system noise for microwave kinetic inductance detector comprising niobium film on silicon substrate

A microwave kinetic inductance detector (MKID) is a cutting-edge superconducting detector. It comprises a resonator circuit constructed with a superconducting film on a dielectric substrate. To expand its field of application, it is important to establish a method to suppress the two-level system (TLS) noise that is caused by the electric fluctuations between the two energy states at the surface of the substrate. The electric field density can be decreased by expanding the strip width (S) and gap width from the ground plane (W) in the MKID circuit, allowing the suppression of TLS noise. However, this effect has not yet been confirmed for MKIDs made with niobium films on silicon substrates. In this study, we demonstrate its effectiveness for such MKIDs. We expanded the dimension of the circuit from (S, W) = (3.00 $μ$m, 4.00 $μ$m) to (S, W) = (5.00 $μ$m, 23.7 $μ$m), and achieved an increased suppression of 5.5 dB in TLS noise.

preprint2022arXiv

Material properties of a low contraction and resistivity silicon-aluminum composite for cryogenic detectors

We report on the cryogenic properties of a low-contraction silicon-aluminum composite, namely Japan Fine Ceramics SA001, to use as a packaging structure for cryogenic silicon devices. SA001 is a silicon--aluminum composite material (75% silicon by volume) and has a low thermal expansion coefficient ($\sim$1/3 that of aluminum). The superconducting transition temperature of SA001 is measured to be 1.18 K, which is in agreement with that of pure aluminum, and is thus available as a superconducting magnetic shield material. The residual resistivity of SA001 is 0.065 $\mathrm{μΩm}$, which is considerably lower than an equivalent silicon--aluminum composite material. The measured thermal contraction of SA001 immersed in liquid nitrogen is $\frac{L_{293\mathrm{K}}-L_{77\mathrm{K}}}{L_{293\mathrm{K}}}=0.12$%, which is consistent with the expected rate obtained from the volume-weighted mean of the contractions of silicon and aluminum. The machinability of SA001 is also confirmed with a demonstrated fabrication of a conical feedhorn array, with a wall thickness of 100 $\mathrm{μm}$. These properties are suitable for packaging applications for large-format superconducting detector devices.

preprint2020arXiv

A method to measure superconducting transition temperature of microwave kinetic inductance detector by changing power of readout microwaves

A microwave kinetic inductance detector (MKID) is a cutting-edge superconducting detector, and its principle is based on a superconducting resonator circuit. The superconducting transition temperature (Tc) of the MKID is an important parameter because various MKID characterization parameters depend on it. In this paper, we propose a method to measure the Tc of the MKID by changing the applied power of the readout microwaves. A small fraction of the readout power is deposited in the MKID, and the number of quasiparticles in the MKID increases with this power. Furthermore, the quasiparticle lifetime decreases with the number of quasiparticles. Therefore, we can measure the relation between the quasiparticle lifetime and the detector response by rapidly varying the readout power. From this relation, we estimate the intrinsic quasiparticle lifetime. This lifetime is theoretically modeled by Tc, the physical temperature of the MKID device, and other known parameters. We obtain Tc by comparing the measured lifetime with that acquired using the theoretical model. Using an MKID fabricated with aluminum, we demonstrate this method at a 0.3 K operation. The results are consistent with those obtained by Tc measured by monitoring the transmittance of the readout microwaves with the variation in the device temperature. The method proposed in this paper is applicable to other types, such as a hybrid-type MKID.

preprint2015arXiv

Development FD-SOI MOSFET amplifiers for integrated read-out circuit of superconducting-tunnel-junction single-photon-detectors

We proposed a new high resolution single photon infrared spectrometer for search for radiative decay of cosmic neutrino background(C$ν$B). The superconducting-tunnel-junctions(STJs) are used as a single photoncounting device. Each STJ consists of Nb/Al/Al${}_{\mathrm{x}}$O${}_{\mathrm{y}}$/Al/Nb layers and their thicknesses are optimized for the operation temperature at 370 mK cooled by a ${}^{3}$He sorption refrigerator. Our STJs achieved the leak current 250 pA and the measured data implies that a smaller area STJ fulfills our requirement. FD-SOI MOSFETs are employed to amplify the STJ signal current in order to increase signal-to-noise ratio(S/N). FD-SOI MOSFETs can be operated at cryogenic temperature of 370 mK, which reduces the noise of the signal amplification system. FD-SOI MOSFET characteristics are measured at cryogenic temperature. The Id-Vgs curve shows a sharper turn on with a higher threshold voltage and the Id-Vds curve shows a non linear shape in linear region at cryogenic temperature. Taking into account these effects, FD-SOI MOSFETs are available for read-out circuit of STJ detectors. The bias voltage for STJ detectors are 0.4 mV and it must be well stabilized to deliver high performance. We proposed an FD-SOI MOSFET based charge integrated amplifier design as a read-out circuit of STJ detectors. The requirements for an operational amplifier used in the amplifier is estimated using SPICE simulation. The op-amp required to have a fast response(GBW$\geq$100 MHz) and it must have low power dissipation as compared to the cooling power of refrigerator.