Researcher profile

Saskia Fiedler

Saskia Fiedler contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Disentangling cathodoluminescence spectra in nanophotonics: particle eigenmodes vs transition radiation

Cathodoluminescence spectroscopy performed in an electron microscope has proven a versatile tool for analysing the near- and far-field optical response of plasmonic and dielectric nanostructures. Nevertheless, the transition radiation produced by electron impact is often disregarded in the interpretation of the spectra recorded from resonant nanoparticles. Here we show, experimentally and theoretically, that transition radiation can by itself generate distinct resonances which, depending on the time of flight of the electron beam inside the particle, can result from constructive or destructive interference in time. Superimposed on the eigenmodes of the investigated structures, these resonances can distort the recorded spectrum and lead to potentially erroneous assignment of modal characters to the spectral features. We develop an intuitive analogy that helps distinguish between the two contributions. As an example, we focus on the case of silicon nanospheres, and show that our analysis facilitates the unambiguous interpretation of experimental measurements on Mie-resonant nanoparticles.

preprint2020arXiv

The importance of substrates for the visibility of "dark" plasmonic modes

Dark plasmonic modes have interesting properties, such as a longer lifetime and a narrower linewidth than their radiative counterpart, as well as little to no radiative losses. However, they have not been extensively studied yet due to their optical inaccessibility. Using electron-energy loss (EEL) and cathodoluminescence (CL) spectroscopy, the dark radial breathing modes (RBMs) in thin, monochrystalline gold nanodisks are systematically investigated in this work. It is found that the RBMs can be detected in a CL set-up despite only collecting the far-field. Their visibility in CL is attributed to the breaking of the mirror symmetry by the high-index substrate, creating an effective dipole moment. The outcoupling into the far-field is demonstrated to be enhanced by a factor of 4 by increasing the thickness of the supporting SiN membrane from 5 to 50 nm due to the increased net electric dipole moment in the substrate. Furthermore, it is shown that the resonance energy of RBMs can be easily tuned by varying the diameter of the nanodisk, making them promising candidates for nanophotonic applications.

preprint2016arXiv

Bright Room-Temperature Single Photon Emission from Defects in Gallium Nitride

Single photon emitters play a central role in many photonic quantum technologies. A promising class of single photon emitters consists of atomic color centers in wide-bandgap crystals, such as diamond silicon carbide and hexagonal boron nitride. However, it is currently not possible to grow these materials as sub-micron thick films on low-refractive index substrates, which is necessary for mature photonic integrated circuit technologies. Hence, there is great interest in identifying quantum emitters in technologically mature semiconductors that are compatible with suitable heteroepitaxies. Here, we demonstrate robust single photon emitters based on defects in gallium nitride (GaN), the most established and well understood semiconductor that can emit light over the entire visible spectrum. We show that the emitters have excellent photophysical properties including a brightness in excess of 500x10^3 counts/s. We further show that the emitters can be found in a variety of GaN wafers, thus offering reliable and scalable platform for further technological development. We propose a theoretical model to explain the origin of these emitters based on cubic inclusions in hexagonal gallium nitride. Our results constitute a feasible path to scalable, integrated on-chip quantum technologies based on GaN.