Researcher profile

Sarnjeet S. Dhesi

Sarnjeet S. Dhesi contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Nanoscale self-organisation and metastable non-thermal metallicity in Mott insulators

Mott transitions in real materials are first order and almost always associated with lattice distortions, both features promoting the emergence of nanotextured phases. This nanoscale self-organization creates spatially inhomogeneous regions, which can host and protect transient non-thermal electronic and lattice states triggered by light excitation. Here, we combine time-resolved X-ray microscopy with a Landau-Ginzburg functional approach for calculating the strain and electronic real-space configurations. We investigate V$_2$O$_3$, the archetypal Mott insulator in which nanoscale self-organization already exists in the low-temperature monoclinic phase and strongly affects the transition towards the high-temperature corundum metallic phase. Our joint experimental-theoretical approach uncovers a remarkable out-of-equilibrium phenomenon: the photo-induced stabilisation of the long sought monoclinic metal phase, which is absent at equilibrium and in homogeneous materials, but emerges as a metastable state solely when light excitation is combined with the underlying nanotexture of the monoclinic lattice.

preprint2021arXiv

Defect-driven antiferromagnetic domain walls in CuMnAs films

Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microscopy combined with scanning X-ray diffraction imaging and micromagnetic simulations, that the AF domain structure in CuMnAs thin films is dominated by nanoscale structural twin defects. We demonstrate that microtwin defects, which develop across the entire thickness of the film and terminate on the surface as characteristic lines, determine the location and orientation of 180 degree and 90 degree domain walls. The results emphasize the crucial role of nanoscale crystalline defects in determining the AF domains and domain walls, and provide a route to optimizing device performance.

preprint2020arXiv

Large magnetoelectric coupling in multiferroic oxide heterostructures assembled via epitaxial lift-off

The strain dependent functional properties of epitaxial transition metal oxide films can be significantly modified via substrate selection. However, large lattice mismatches preclude dislocation-free epitaxial growth on ferroelectric substrates, whose strain states are modified by applied electric fields. Here we overcome this mismatch problem by depositing an epitaxial film of ferromagnetic La0.7Sr0.3MnO3 on a single crystal substrate of well lattice matched SrTiO3 via a film of SrRuO3 that we subsequently dissolved, permitting the transfer of unstrained La0.7Sr0.3MnO3 to a ferroelectric substrate of 0.68Pb(Mg1/3Nb2/3)O3 0.32PbTiO3 in a different crystallographic orientation. Ferroelectric domain switching, and a concomitant ferroelectric phase transition, produced large non volatile changes of magnetization that were mediated by magnetic domain rotations at locations defined by the microstructure - as revealed via high resolution vector maps of magnetization constructed from photoemission electron microscopy data, with contrast from x-ray magnetic circular dichroism. In future, our method may be exploited to control functional properties in dislocation free epitaxial films of any composition.

preprint2020arXiv

Spectral functions of CVD grown MoS$_2$ monolayers after chemical transfer onto Au surface

The recent rise of van der Waals (vdW) crystals has opened new prospects for studying versatile and exotic fundamental physics with future device applications such as twistronics. Even though the recent development on Angle-resolved photoemission spectroscopy (ARPES) with Nano-focusing optics, making clean surfaces and interfaces of chemically transferred crystals have been challenging to obtain high-resolution ARPES spectra. Here, we show that by employing nano-ARPES with submicron sized beam and polystyrene-assisted transfer followed by annealing process in ultra-high vacuum environment, remarkably clear ARPES spectral features such as spin-orbit splitting and band renormalization of CVD-grown, monolayered MoS2 can be measured. Our finding paves a way to exploit chemically transferred crystals for measuring high-resolution ARPES spectra to observe exotic quasi-particles in vdW heterostructures.