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Sanjay Gupta

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Published work

6 published item(s)

preprint2012arXiv

Electronic structure of a single vortex in d-wave superconductor revisited

The present work deals with the study of d-wave superconductor in presence of a single vortex placed at the centre of the 2D lattice using the $t-t'-J$ model within the renormalized mean field theory. It is found that the in absence of the vortex the ground state has a d-wave configuration. In presence of the vortex, the superconducting order parameter, above the critical doping, drops to a low non zero value within a few lattice points from the vortex (that is within the the vortex core) and beyond it converges to the constant value in absence of vortex. We observe that above the critical doping things are consistent with the experimental results while there is an anomalous rise in the superconducting order parameter at very low doping within the vortex core. This we feel is because of antiferromagnetic ordering taking place within the vortex core at low doping.

preprint2011arXiv

Physics of interface: Barrier with correlations and disorder sandwiched between two metallic planes

A Metal-Disordered Mott insulator-Metal heterostructure is studied at half-fiiling using unrestricted Hartree Fock method. The corresponding clean system has been shown to be an insulator for any finite on site correlation. Interestingly we find that introduction of explicit disorder induces a metal-insulator transition at a critical value of disorder. The critical value corresponds to the point at which disorder nullifies the effect of onsite correlation. The wavefunctions are found to delocalize by increasing disorder, rendering the system metallic.

preprint2011arXiv

Physics of interface: Mott insulator barrier sandwiched between two metallic planes

We consider a heterostructure of a metal and a barrier with onsite correlation at half filling using unrestricted Hartree Fock. We find that above a certain value of correlation strength in the barrier planes, the system is a Mott insulator, while below this value the system still behaves like a gapless insulator. The energy spectrum is found to be very novel with the presence of multiple gaps. Thus the system remains non metallic for any finite value of correlation.

preprint2011arXiv

Physics of interface: Strongly correlated barrier with chemical modulation sandwiched between two metallic planes

Barrier planes described by the Ionic Hubbard model and sandwiched between metallic planes on both sides are studied using unrestricted Hartree Fock. For zero onsite correlation, the presence of the metallic interface generates an additional gap in the energy spectrum away from half filling, if the chemically modulated potential in the barrier planes exceed a critical value. There is reentrant behaviour and an insulator-metal-insulator transition as we tune onsite correlation for fixed site potential. The metal is thus able to penetrate the barrier planes due to proximity effect, in a system that is otherwise an insulator throughout.

preprint2010arXiv

Dimensional and temperature dependence of metal insulator transition in correlated and disordered systems

We study the dimensional dependence of the interplay between correlation and disorder in two dimension at half filling using 2D $t-t'$ disordered Hubbard model with deterministic disorder both at zero and finite temperatures. Inclusion of $t'$ without disorder leads to a metallic phase at half filling below a certain critical value of $U$. Above this critical value $U_c$ correlation favours antiferromagnetic phase. Since disorder leads to double occupancy over the lower energy site, the competition between Hubbard $U$ and disorder leads to the emergence of a metallic phase, which can be quantified by the calculation of Kubo conductivity, gap at half-filling, density of states, spin order parameter, Inverse participation ratio (IPR) and bandwidth. We have studied the effect of disorder on the system in a very novel way through a deterministic disorder which follows a Fibonacci sequence. Behaviour of different parameters show interesting features on going from a two to quasi one dimensional system.

preprint2003arXiv

Predicting Response-Function Results of Electrical/Mechanical Systems Through Artificial Neural Network

In the present paper a newer application of Artificial Neural Network (ANN) has been developed i.e., predicting response-function results of electrical-mechanical system through ANN. This method is specially useful to complex systems for which it is not possible to find the response-function because of complexity of the system. The proposed approach suggests that how even without knowing the response-function, the response-function results can be predicted with the use of ANN to the system. The steps used are: (i) Depending on the system, the ANN-architecture and the input & output parameters are decided, (ii) Training & test data are generated from simplified circuits and through tactic-superposition of it for complex circuits, (iii) Training the ANN with training data through many cycles and (iv) Test-data are used for predicting the response-function results. It is found that the proposed novel method for response prediction works satisfactorily. Thus this method could be used specially for complex systems where other methods are unable to tackle it. In this paper the application of ANN is particularly demonstrated to electrical-circuit system but can be applied to other systems too.