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Samuel Palermo

Samuel Palermo appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.ins-deteess.SP

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2 published item(s)

preprint2022arXiv

A 1.5GS/s 8b Pipelined-SAR ADC with Output Level Shifting Settling Technique in 14nm CMOS

A single channel 1.5GS/s 8-bit pipelined-SAR ADC utilizes a novel output level shifting (OLS) settling technique to reduce the power and enable low-voltage operation of the dynamic residue amplifier. The ADC consists of a 4-bit first stage and a 5-bit second stage, with 1-bit redundancy to relax the offset, gain, and settling requirements of the first stage. Employing the OLS technique allows for an inter-stage gain of ~4 from the dynamic residue amplifier with a settling time that is only 28% of a conventional CML amplifier. The ADC's conversion speed is further improved with the use of parallel comparators in the two asynchronous stages. Fabricated in a 14nm FinFET technology, the ADC occupies 0.0013mm2 core area and operates with a 0.8V supply. 6.6-bit ENOB is achieved at Nyquist while consuming 2.4mW, resulting in an FOM of 16.7fJ/conv.-step.

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preprint2022arXiv

A 40Gb/s Linear Redriver with Multi-Band Equalization in 130nm SiGe BiCMOS

A linear redriver circuit implements multi-band equalization techniques to efficiently compensate for high-frequency channel loss and extend high-speed wireline link reach. Input and output stage emitter-follower buffers with dual AC and DC paths provide programmable low-frequency peaking for channel skin effect, while a continuous-time linear equalizer (CTLE) utilizes RC degeneration in the input stage for mid-band peaking and a subsequent feedback structure contributes to additional high-frequency peaking to compensate for the additional dielectric loss effects. A variable-gain amplifier (VGA) stage provides up to 7.1dB tunable gain and utilizes negative capacitive loads for bandwidth extension. Input and output return loss of -11.0dB and -12.2dB is respectively achieved at 20GHz with input and output T-coil stages that distribute the ESD circuitry capacitance. Fabricated in a 130nm SiGe BiCMOS process, the redriver achieves 23.5dB max peaking at 20GHz and supports a 1Vppd linear output swing. Per-channel power consumption is 115.2mW from a 1.8V supply.

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