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Researcher profile

Samuel G. Carter

Samuel G. Carter contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallquant-phcond-mat.mtrl-sciphysics.optics

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Published work

6 published item(s)

preprint2022arXiv

Collective scattering from quantum dots in a photonic crystal waveguide

We demonstrate scattering of laser light from two InAs quantum dots coupled to a photonic crystal waveguide, which is achieved by strain-tuning the optical transitions of the dots into mutual resonance. By performing measurements of the intensity and photon statistics of transmitted laser light before and after tuning the dots into resonance, we show that the nonlinearity is enhanced by collective scattering. In addition to providing a means of manipulating few-photon optical nonlinearities, our approach establishes new opportunities for multi-emitter quantum optics in a solid-state platform.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Enhanced spin coherence at the sweet spot of a self-assembled quantum dot molecule

A pair of coupled dots with one electron in each dot can provide improvements in spin coherence, particularly at an electrical bias called the sweet spot, but few measurements have been performed on self-assembled dots in this regime. Here, we directly measure the $T_2^*$ coherence time of the singlet-triplet states in this system as a function of bias and magnetic field, obtaining a maximum $T_2^*$ of 60 ns, more than an order of magnitude higher than an electron spin in a single quantum dot. Our results uncover two main dephasing mechanisms: electrical noise away from the sweet spot, and a magnetic field dependent interaction with nuclear spins due to a difference in g-factors.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Scalable in operando strain tuning in nanophotonic waveguides enabling three-quantum dot superradiance

The quest for an integrated quantum optics platform has motivated the field of semiconductor quantum dot research for two decades. Demonstrations of quantum light sources, single photon switches, transistors, and spin-photon interfaces have become very advanced. Yet the fundamental problem that every quantum dot is different prevents integration and scaling beyond a few quantum dots. Here, we address this challenge by patterning strain via local phase transitions to selectively tune individual quantum dots that are embedded in a photonic architecture. The patterning is implemented with in operando laser crystallization of a thin HfO$_{2}$ film "sheath" on the surface of a GaAs waveguide. Using this approach, we tune InAs quantum dot emission energies over the full inhomogeneous distribution with a step size down to the homogeneous linewidth and a spatial resolution better than 1 $μ$m. Using these capabilities, we tune multiple quantum dots into resonance within the same waveguide and demonstrate a quantum interaction via superradiant emission from three quantum dots.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Enabling remote quantum emission in 2D semiconductors via porous metallic networks

The interaction between two-dimensional crystals (2DCs) and metals is ubiquitous in 2D material research. Here we report how 2DC overlayers influence the recrystallization of relatively thick metal films and the subsequent synergetic benefits this provides for coupling surface plasmon-polaritons (SPPs) to photon emission in 2D semiconductors. We show that annealing 2DC/Au films on SiO2 results in a 'reverse epitaxial' process where initially nanocrystalline Au films become highly textured and in close crystallographic registry to the 2D crystal overlayer. With continued annealing, the metal underlayer dewets to form an oriented pore enabled network (OPEN) film in which the 2DC overlayer remains suspended above or coats the inside of the metal pores. This OPEN film geometry supports SPPs launched by either direct laser excitation or by light emitted from the TMD semiconductor itself, where energy in-coupling and out-coupling occurs at the metal pore sites such that dielectric spacers between the metal and 2DC layer are unnecessary. At low temperatures a high density of single-photon emitters (SPEs) is present across an OPEN-WSe2 film, and we demonstrate non-local excitation of SPEs at a distance of 17 μm with minimal loss of photon purity. Our results suggest the OPEN film geometry is a versatile platform that could facilitate the use of layered materials in quantum optics systems.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Optical control of one and two hole spins in interacting quantum dots

A single hole spin in a semiconductor quantum dot has emerged as a quantum bit that is potentially superior to an electron spin. A key feature of holes is that they have a greatly reduced hyperfine interaction with nuclear spins, which is one of the biggest difficulties in working with an electron spin. It is now essential to show that holes are viable for quantum information processing by demonstrating fast quantum gates and scalability. To this end we have developed InAs/GaAs quantum dots coupled through coherent tunneling and charged with controlled numbers of holes. We report fast, single qubit gates using a sequence of short laser pulses. We then take the important next step toward scalability of quantum information by optically controlling two interacting hole spins in separate dots.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Ultrafast optical control of entanglement between two quantum dot spins

The interaction between two quantum bits enables entanglement, the two-particle correlations that are at the heart of quantum information science. In semiconductor quantum dots much work has focused on demonstrating single spin qubit control using optical techniques. However, optical control of entanglement of two spin qubits remains a major challenge for scaling from a single qubit to a full-fledged quantum information platform. Here, we combine advances in vertically-stacked quantum dots with ultrafast laser techniques to achieve optical control of the entangled state of two electron spins. Each electron is in a separate InAs quantum dot, and the spins interact through tunneling, where the tunneling rate determines how rapidly entangling operations can be performed. The two-qubit gate speeds achieved here are over an order of magnitude faster than in other systems. These results demonstrate the viability and advantages of optically controlled quantum dot spins for multi-qubit systems.

0 citations0 reviewsNo code linkedOpen access