Researcher profile

Samridh Jaiswal

Samridh Jaiswal contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Electric-field control of spin-orbit torques in perpendicularly magnetized W/CoFeB/MgO films

Controlling magnetism by electric fields offers a highly attractive perspective for designing future generations of energy-efficient information technologies. Here, we demonstrate that the magnitude of current-induced spin-orbit torques in thin perpendicularly magnetized CoFeB films can be tuned and even increased by electric field generated piezoelectric strain. Using theoretical calculations, we uncover that the subtle interplay of spin-orbit coupling, crystal symmetry, and orbital polarization is at the core of the observed strain dependence of spin-orbit torques. Our results open a path to integrating two energy efficient spin manipulation approaches, the electric field-induced strain and the current-induced magnetization switching, thereby enabling novel device concepts.

preprint2020arXiv

Heisenberg Exchange and Dzyaloshinskii-Moriya Interaction in Ultrathin CoFeB Single and Multilayers

We present results of the analysis of Brillouin Light Scattering (BLS) measurements of spin waves performed on ultrathin single and multirepeat CoFeB layers with adjacent heavy metal layers. From a detailed study of the spin-wave dispersion relation, we independently extract the Heisenberg exchange interaction (also referred to as symmetric exchange interaction), the Dzyaloshinskii-Moriya interaction (DMI, also referred to as antisymmetric exchange interaction), and the anisotropy field. We find a large DMI in CoFeB thin films adjacent to a Pt layer and nearly vanishing DMI for CoFeB films adjacent to a W layer. Furthermore, the residual influence of the dipolar interaction on the dispersion relation and on the evaluation of the Heisenberg exchange parameter is demonstrated. In addition, an experimental analysis of the DMI on the spin-wave lifetime is presented. All these parameters play a crucial role in designing skyrmionic or spin-orbitronic devices.