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Samir Bounouar

Samir Bounouar contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2020arXiv

Entanglement robustness to excitonic spin precession in a quantum dot

A semiconductor quantum dot (QD) is an attractive resource to generate polarization-entangled photon pairs. We study the excitonic spin precession (flip-flop) in a family of QDs with different excitonic fine-structure splitting (FSS) and its impact on the entanglement of photons generated from the excitonic-biexcitonic radiative cascade. Our results reveal that coherent processes leave the time post-selected entanglement of QDs with finite FSS unaffected while changing the eigenstates of the system. The flip-flop's precession is observed via quantum tomography through anomalous oscillations of the coincidences in the rectilinear basis. A theoretical model is constructed with the inclusion of an excitonic flip-flop rate and is compared with a two-photon quantum tomography measurement on a QD exhibiting the spin flip-flop mechanism. A generalization of the theoretical model allows estimating the degree of entanglement as a function of the FSS and the spin-flip rate. For a finite temporal resolution, the negativity is found to be oscillating with respect to both the FSS and the spin-flip rate. This oscillatory behavior disappears for perfect temporal resolution and maximal entanglement is retrieved despite the flip-flop process.

preprint2014arXiv

Monolithic on-chip integration of semiconductor waveguides, beamsplitters and single-photon sources

The implementation of a fully integrated Hadamard gate on one single chip is currently one of the major goals in the quantum computation and communication community. Prerequisites for such a chip are the integration of single-photon sources and detectors into waveguide structures such as photonic crystals or slab and ridge waveguide. Here, we present an implementation of a single-photon on-chip experiment based on a III-V semiconductor platform. Individual semiconductor quantum dots were used as pulsed single-photon sources integrated in ridge waveguides, and on-chip waveguide-beamsplitter operation is verified on the single-photon level by performing off-chip photon cross-correlation measurements between the two output ports of the beamsplitter. A careful characterization of the waveguide propagation losses (~ 0.0068 dB/um) documents the applicability of such GaAs-based waveguide structures in more complex photonic integrated circuits. The presented work marks an important step towards the realization of fully integrated photonic quantum circuits including on-demand single-photon sources.

preprint2013arXiv

On-demand generation of indistinguishable polarization-entangled photon pairs

An on-demand source of indistinguishable and entangled photon pairs is a fundamental component for different quantum information applications such as optical quantum computing, quantum repeaters, quantum teleportation and quantum communication. Parametric down-conversion and four-wave mixing sources of entangled photons have shown high degrees of entanglement and indistinguishability but the probabilistic nature of their generation process also creates zero or multiple photon pairs following a Poissonian distribution. This limits their use in complex algorithms where many qubits and gate operations are required. Here we show simultaneously ultra-high purity (g^(2)(0) < 0.004), high entanglement fidelity (0.81 +/- 0.02), high two-photon interference non-post selective visibilities (0.86 +/- 0.03 and 0.71 +/- 0.04) and on-demand generation of polarization-entangled photon pairs from a single semiconductor quantum dot. Through a two-photon resonant excitation scheme, the biexciton population is deterministically prepared by a Pi-pulse. Applied on a quantum dot showing no exciton fine structure splitting, this results in the deterministic generation of indistinguishable entangled photon pairs.

preprint2012arXiv

Insertion of CdSe quantumdots in ZnSe nanowires : MBE growth and microstructure analysis

ZnSe nanowire growth has been successfully achieved on ZnSe (100) and (111)B buffer layers deposited on GaAs substrates. Cubic [100] oriented ZnSe nanowires or [0001] oriented hexagonal NWs are obtained on (100) substrates while [111] oriented cubic mixed with [0001] oriented hexagonal regions are obtained on (111)B substrates. Most of the NWs are perpendicular to the surface in the last case. CdSe quantum dots were successfully incorporated in the ZnSe NWs as demonstrated by transmission electron microscopy, energy filtered TEM and high angle annular dark field scanning TEM measurements.

preprint2012arXiv

Polarity determination in ZnSe nanowires by HAADF STEM

High angle annular dark field scanning transmission electron microscopy is used to analyze the polarity of ZnSe nanowires grown, by molecular beam epitaxy, on GaAs substrates. The experimental results are compared to simulated images in order to verify possible experimental artefacts. In this work we show that for this type of nano-objects, a residual tilt of the specimen below 15 mrad, away from the crystallographic zone axis does not impair the interpretation of the experimental images.

preprint2012arXiv

Probing photon energy statistics of an emitter using photon correlations

We investigate the possibility of measuring the homogeneous and inhomogeneous contribution to the linewidth of a spectrally diffusing single photon emitter using a simple photon correlation spectroscopy method (PCS). The photon energy statistics of the homogeneous line (poissonian) and of the spectral diffusion (first order markovian) being of different natures, they act differently on the half-line autocorrelation function (HLAF). We model here their effects and show it is possible to extricate them, opening the opportunity to determine separately the homogeneous linewidth, and the spectral diffusion amplitude.