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Samik DuttaGupta

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cond-mat.mtrl-sci cond-mat.str-el

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preprint2022arXiv

Anisotropic magnetotransport in the layered antiferromagnet TaFe$_{1.25}$Te$_3$

The discovery of fascinating ways to control and manipulate antiferromagnetic materials have garnered considerable attention as an attractive platform to explore novel spintronic phenomena and functionalities. Layered antiferromagnets (AFMs) exhibiting interesting magnetic structures, can serve as an attractive starting point to establish novel functionalities down to the two-dimensional limit. In this work, we explore the magnetoresistive properties of the spin-ladder AFM TaFe$_{1.25}$Te$_3$. Magnetization studies reveal an anisotropic magnetic behavior resulting in the stabilization of a spin-flop configuration for H $\perp$ (10-1) plane (i.e., out-of-plane direction). Angle-dependent longitudinal and transverse magnetoresistances show an unusual anharmonic behavior. A significant anisotropic enhancement of magnetoresistance when H $\perp$ (10-1) plane compared to H $\parallel$ (10-1) directions has been observed. The present results deepen our understanding of the magnetoresistive properties of low-dimensional layered AFMs, and point towards the possibility of utilizing these novel material systems for antiferromagnetic spintronics.

preprint2021arXiv

Modification of unconventional Hall effect with doping at the non-magnetic site in a 2D van der Waals ferromagnet

Two-dimensional (2D) van der Waals (vdW) magnetic materials have garnered considerable attention owing to the existence of magnetic order down to atomic dimensions and flexibility towards interface engineering, offering an attractive platform to explore novel spintronic phenomena and functionalities. Understanding of the magnetoresistive properties and their correlation to the underlying magnetic configurations is essential for 2D vdW-based spintronic or quantum information devices. Among the promising candidates, vdW ferromagnet (FM) Fe3GeTe2 shows an unusual magnetotransport behavior, tunable by doping at the magnetic (Fe) site, and tentatively arising from complicated underlying spin texture configurations. Here, we explore an alternative route towards manipulation of magnetotransport properties of a vdW FM without directly affecting the magnetic site i.e., by doping at the non-magnetic (Ge) site of Fe3(Ge,As)Te2. Interestingly, doping at the non-magnetic (Ge) site results in an unconventional Hall effect whose strength was considerably modified by increasing As concentration, possibly arising from emergent electromagnetic behavior from underlying complicated spin configurations. The present results provide a possible route to understand the intricate role played by the non-magnetic (Ge) atom towards magnetic properties of vdW FMs, and shows a novel direction towards tailoring of underlying interactions responsible for the stabilization of non trivial spin textures in 2D magnetic vdW materials.

preprint2015arXiv

Magnetization switching by spin-orbit torque in an antiferromagnet/ferromagnet bilayer system

Spin-orbit torque (SOT)-induced magnetization switching shows promise for realizing ultrafast and reliable spintronics devices. Bipolar switching of perpendicular magnetization via SOT is achieved under an in-plane magnetic field collinear with an applied current. Typical structures studied so far comprise a nonmagnet/ferromagnet (NM/FM) bilayer, where the spin Hall effect in the NM is responsible for the switching. Here we show that an antiferromagnet/ferromagnet (AFM/FM) bilayer system also exhibits a SOT large enough to switch the magnetization of FM. In this material system, thanks to the exchange-bias effect of the AFM, we observe the switching under no applied field by using an antiferromagnetic PtMn and ferromagnetic Co/Ni multilayer with a perpendicular easy axis. Furthermore, tailoring the stack achieves a memristor-like behaviour where a portion of the reversed magnetization can by controlled in an analogue manner. The AFM/FM system is thus a promising building block for SOT devices as well as providing an attractive pathway towards neuromorphic computing.