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Saket Asthana

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Published work

3 published item(s)

preprint2012arXiv

A-Site Cation disorder and Size variance effects on the physical properties of multiferroic Bi0.9RE0.1FeO3 Ceramics (RE =Gd3+,Tb3+,Dy3+)

Effect of an internal chemical pressure on structural, optical, magnetic and electrical properties in Bi0.9RE0.1FeO3 Ceramics (RE =Gd3+,Tb3+,Dy3+)has been studied extensively. Some of the highlights are as follows; 1. Coexistence of orthorhombic Bragg reflections along with the R3c phase.(Structural Phase separation revealed from XRD and Raman spectroscopy) 2. Selective softening of phonon mode corresponding to oxygen motion suggests a significant destabilization in the FeO6 octahedra. 3. Three Charge transfer transitions (Fe1 3d\rightarrow Fe2 3d, Op \rightarrow Fed,Op \rightarrow Bip) and a doubly degenerate d-d transition (6A1g \rightarrow 4T2g) have been observed through optical studies. 4. The suppression of spiral spin structure release the macroscopic magnetization so called weak ferromagnetism in RE-BFO samples and expalined by presence of DM interaction 5. Heat flow measurement reveals a decrease in Neel transition temperature (TN) with RE3+-ion substitution endorses the suppression of antiferromagnetic ordering. Present results also provide an 6. A decrease in vacant sites was confirmed from the lower density of states N(Ef) of charge carriers in RE-BFO samples, further it also correlates well with the hopping length (Rmin) and conductivity studies. All the results are well correlated.

preprint2012arXiv

Effect of internal chemical pressure on transport properties and TCR for sensors applications

In this work, the structural and transport properties of (Nd0.7-xLax)Sr0.3MnO3 manganites with x = 0, 0.1 and 0.2 prepared by solid state reaction route are studied. These compounds are found to be crystallized in orthorhombic structural form. The influence of La substitution in place of Nd at A-site shifts the metal to semiconductor/insulator transition temperature (TMI) peak towards room temperature with x = 0, 0.1 and 0.2. A composition prepared with the value of x = 0.2 in (Nd0.7-xLax)0.7Sr0.3MnO3 manganites (i.e. (Nd0.5La0.2)0.7Sr0.3MnO3), TMI was observed at 289 K which is close to room temperature. The maximum percentage of TCR values of compounds are increasing with average radius <r_A> but %TCR are slightly equal in x = 0.1 and 0.2 as compared to the parent compound. The maximum %TCR value is almost independent with A-site average radius <r_A> in x = 0.1 and 0.2. The electrical resistivity data are explored by different theoretical models and it has been concluded that at low temperature (ferromagnetic metallic region) conduction mechanism presumably due to the combined effect of electron-electron, electron-phonon and electron-magnon scattering, while in paramagnetic semiconducting regime, the variation of resistivity with temperature are explained by (1) Mott variable range hopping mechanism, (2) Adiabatic small polaron hopping and (3) Thermally activated hopping. The polaron hopping and thermal activation energies are decreasing with increase of an average A-site ionic radius (<rA>). An appropriate enlightenment for the observed behavior is discussed in detail.

preprint2012arXiv

Study of Structural, Magnetic and Electrical properties on Ho - substituted BiFeO3

The polycrystalline Bi1-xHoxFeO3 (x=0, 0.05, 0.1) compounds were synthesized by conventional solid-state route. Rietveld refinement reveals that all the compounds were stabilized in rhombohedral structure with R3c (IUCr No. 161) space group. A competing ferro and anti-ferro magnetic interaction was observed in Ho-substituted compounds. A change in the Fe-O-Fe bond-angle and Fe-O bond distance increase the Neel Transition temperature with increasing Ho concentration. The appearance of peak in imaginary part of impedance (Z") for each concentration and shifting of this peak with temperature towards higher frequency side indicated that the presence of electric relaxations. Correlated Barrier Hopping model (CBH) was employed to explain the frequency and temperature dependence of ac conductivity and the mechanism of transport in the material BFO and Ho substituted BFO. Density of states near Fermi level was calculated by using the ac conductivity data.