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Sajna Hameed

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cond-mat.mtrl-sci cond-mat.str-el cond-mat.supr-con math-ph math.MP

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preprint2022arXiv

Electrochemically-driven insulator-metal transition in ionic-liquid-gated antiferromagnetic Mott-insulating NiS$_2$ single crystals

Motivated by the existence of superconductivity in pyrite-structure CuS$_2$, we explore the possibility of ionic-liquid-gating-induced superconductivity in the proximal antiferromagnetic Mott insulator NiS$_2$. A clear gating-induced transition from a two-dimensional insulating state to a three-dimensional metallic state is observed at positive gate bias on single crystal surfaces. No evidence for superconductivity is observed down to the lowest measured temperature of 0.45 K, however. Based on transport, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy, and other techniques, we deduce an electrochemical gating mechanism involving a substantial decrease in the S:Ni ratio (over hundreds of nm), which is both non-volatile and irreversible. This is in striking contrast to the reversible, volatile, surface-limited, electrostatic gate effect in pyrite FeS$_2$. We attribute this stark difference in electrochemical vs. electrostatic gating response in NiS$_2$ and FeS$_2$ to the much larger S diffusion coefficient in NiS$_2$, analogous to the different behaviors observed among electrolyte-gated oxides with differing O-vacancy diffusivities. The gating irreversibility, on the other hand, is associated with the lack of atmospheric S; this is in contrast to the better understood oxide case, where electrolysis of atmospheric H$_2$O provides an O reservoir. This study of NiS$_2$ thus provides new insight into electrolyte gating mechanisms in functional materials, in a previously unexplored limit.

preprint2022arXiv

Uniaxial strain control of bulk ferromagnetism in rare-earth titanates

The perovskite rare-earth titanates are model Mott insulators with magnetic ground states that are very sensitive to structural distortions. These distortions couple strongly to the orbital degrees of freedom and, in principle, it should be possible to tune the superexchange and the magnetic transition with strain. We investigate the representative system (Y,La,Ca)TiO$_3$, which exhibits low crystallographic symmetry and no structural instabilities. From magnetic susceptibility measurements of the Curie temperature, we demonstrate direct, reversible and continuous control of ferromagnetism by influencing the TiO$_6$ octahedral tilts and rotations with uniaxial strain. The relative change in $T_C$ as a function of strain is well described by ab initio calculations, which provides detailed understanding of the complex interactions among structural, orbital and magnetic properties in rare-earth titanates. The demonstrated manipulation of octahedral distortions opens up far-reaching possibilities for investigations of electron-lattice coupling, competing ground states, and magnetic quantum phase transitions in a wide range of quantum materials.

preprint2020arXiv

Electronic Structure and Small Hole Polarons in YTiO3

As a prototypical Mott insulator with ferromagnetic ordering, YTiO3 (YTO) is of great interest in the study of strong electron correlation effects and orbital ordering. Here we report the first molecular beam epitaxy (MBE) growth of YTO films, combined with theoretical and experimental characterization of the electronic structure and charge transport properties. The obstacles of YTO MBE growth are discussed and potential routes to overcome them are proposed. DC transport and Seebeck measurements on thin films and bulk single crystals identify p-type Arrhenius transport behavior, with an activation energy of ~ 0.17 eV in thin films, consistent with the energy barrier for small hole polaron migration from hybrid density functional theory (DFT) calculations. Hard X-ray photoelectron spectroscopy measurements (HAXPES) show the lower Hubbard band (LHB) at 1.1 eV below the Fermi level, whereas a Mott-Hubbard band gap of ~1.5 eV is determined from photoluminescence (PL) measurements. These findings provide critical insight into the electronic band structure of YTO and related materials.

preprint2015arXiv

Real eigenvalues of non-Gaussian random matrices and their products

We study the properties of the eigenvalues of real random matrices and their products. It is known that when the matrix elements are Gaussian-distributed independent random variables, the fraction of real eigenvalues tends to unity as the number of matrices in the product increases. Here we present numerical evidence that this phenomenon is robust with respect to the probability distribution of matrix elements, and is therefore a general property that merits detailed investigation. Since the elements of the product matrix are no longer distributed as those of the single matrix nor they remain independent random variables, we study the role of these two factors in detail. We study numerically the properties of the Hadamard (or Schur) product of matrices and also the product of matrices whose entries are independent but have the same marginal distribution as that of normal products of matrices, and find that under repeated multiplication, the probability of all eigenvalues to be real increases in both cases, but saturates to a constant below unity showing that the correlations amongst the matrix elements are responsible for the approach to one. To investigate the role of the non-normal nature of the probability distributions, we present a thorough analytical treatment of the $2 \times 2$ single matrix for several standard distributions. Within the class of smooth distributions with zero mean and finite variance, our results indicate that the Gaussian distribution has the maximum probability of real eigenvalues, but the Cauchy distribution characterised by infinite variance is found to have a larger probability of real eigenvalues than the normal. We also find that for the two-dimensional single matrices, the probability of real eigenvalues lies in the range [5/8,7/8].