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S. V. Zaitsev-Zotov

S. V. Zaitsev-Zotov appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.softcond-mat.supr-con

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Published work

14 published item(s)

preprint2022arXiv

Scanning tunneling microscopy of Bi$_2$Te$_3$ films prepared by pulsed laser deposition: from nanocrystalline structures to van der Waals epitaxy

Bi$_2$Te$_3$ is a material with high efficiency of thermoelectric energy conversion. Recently, it was also recognized as a topological insulator, and is often used as the basis for creation of other types of topological matter. Pulsed laser deposition (PLD) is widely considered as a simple method for growing of multicomponent films, but not as a tool for van der Waals epitaxy. We demonstrate here that the van der Waals epitaxy of Bi$_2$Te$_3$ is indeed impossible in vacuum PLD, but is possible in the presence of a background gas, which is confirmed by the results of scanning tunneling microscopy and spectroscopy studies. Results of {\it ab initio} calculations reproduce tunneling spectra of the first three terraces of epitaxial films of Bi$_2$Te$_3$. In addition, an unusual hexagonal superstructure resembling a charge-density wave is observed in overheated films.

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preprint2020arXiv

Magnetoresistance in quasi-one dimensional Weyl semimetal (TaSe$_4$)$_2$I

Magnetic field effect on linear and nonlinear conductivity in a quasi-one-dimensional Weyl semimetal with a charge density wave (CDW) (TaSe$_4$)$_2$I is studied. Longitudinal magnetoresistance in all known regimes of CDW motion (linear conduction, creep, sliding, "Fröhlich superconductivity") is small, positive and do not exceed a fraction of per cent. Similar magnetotransport measurements were performed in samples profiled by focused ion beams is such a way that motion of the CDW in them is accompanied by phase slip of the CDW. In such samples, a peak-like non-parabolic negative magnetoresistance is observed in relatively small magnetic fields $B \lesssim 4$ T in the nonlinear conduction regime in both longitudinal and transverse geometries. Our results differ significantly from ones obtained earlier and raise the question concerning conditions for observing the axion anomaly in Weyl semimetals in the Peierls state.

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preprint2019arXiv

Non-quadratic transverse magnetoresistance of the nodal line Dirac semimetal InBi

The transverse magnetoresistance of a nodal line Dirac semi-metal InBi has been studied. It is found that the magnetoresistance is not quadratic. In the region of small magnetic fields $ B\lesssim 0.1$~T, it is characterized by high curvature, in the region of medium magnetic fields it is described by the sum of linear and quadratic contributions, and in the region of large magnetic fields $ B\gtrsim 1$~T, it approaches a quadratic law with a curvature several times smaller its zero field value. A phenomenological equation is proposed that allows to describe the entire dependence of the resistance on the magnetic field with an error not exceeding the measurement error of several percent.

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preprint2016arXiv

Energy gap in tunneling spectroscopy: effect of the chemical potential shift

We study the effect of a shift of the chemical potential level on the tunneling conductance spectra. In the systems with gapped energy spectra, significant chemical-potential dependent distortions of the differential tunneling conductance curves, $dI/dV$, arise in the gap region. An expression is derived for the correction of the $dI/dV$, which in a number of cases was found to be large. The sign of the correction depends on the chemical potential level position with respect to the gap. The correction of the $dI/dV$ associated with the chemical potential shift has a nearly linear dependence on the tip-sample separation $z$ and vanishes at $z\to 0$.

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preprint2015arXiv

Electron correlation effects in transport and tunneling spectroscopy of the Si(111)-$7\times 7$ surface

Electronic properties of the Si(111)-$7\times 7$ surface are studied using four- and two-probe conductivity measurements and tunneling spectroscopy. We demonstrate that the temperature dependence of the surface conductivity corresponds to the Efros-Shklovskii law at least in $10-100$~K temperature range. The energy gap at the Fermi level observed in tunneling spectroscopy measurements at $T\geq 5$~K vanishes by thermal fluctuations at $T\approx 30$~K, without any sign of the metal-insulator transition. We show that the low-temperature energy gap observed by the tunneling spectroscopy technique is actually the consequence of the Coulomb blockade effect.

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preprint2014arXiv

Charge-density waves physics revealed by photoconduction

The results of photoconduction study of the Peierls conductors are reviewed. The studied materials are quasi-one-dimensional conductors with the charge-density wave: K$_{0.3}$MoO$_3$, both monoclinic and orthorhombic TaS$_3$ and also a semiconducting phase of NbS$_3$ (phase I). Experimental methods, relaxation times, effects of illumination on linear and nonlinear charge transport, the electric-field effect on photoconduction and results of the spectral studies are described. We demonstrate, in particular, that a simple model of modulated energy gap slightly smoothed by fluctuations fits the available spectral data fairly well. The level of the fluctuations is surprisingly small and does not exceed a few percent of the optical energy gap value.

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preprint2014arXiv

Effect of surface defects and few-atomic steps on the local density of states of the atomically-clean surface of topological insulator Bi$_2$Se$_3$

The results of ultra-high vacuum low-temperature scanning-tunneling microscopy (STM) and spectroscopy (STS) of atomically clean (111) surface of the topological insulator Bi$_2$Se$_3$ are presented. We observed several types of new subsurface defects whose location and charge correspond to p-type conduction of grown crystals. The sign of the thermoelectric effect also indicates p-type conduction. STM and STS measurements demonstrate that the chemical potential is always located inside the bulk band gap. We also observed changes in the local density of states in the vicinity of the quintuple layer steps at the studied surface. This changes correspond either to the shift of the Dirac cone position or to the shift of the chemical potential near the step edge.

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preprint2014arXiv

Indium doping-induced change in the photoconduction spectra of o-TaS3

Impurities and defects are known to affect the properties of the charge density wave (CDW) state but the influence of impurities on the density of states inside the Peierls gap remains largely unexplored. Here we present an experimental study of the effect of indium impurities on photoconduction spectra of CDW compound orthorhombic TaS$_3$. We use the temperature diffusion method to introduce indium into a sample from preliminary attached In contacts. The concentration of In after 23 hours of diffusion is found to be nonuniform and strongly dependent on the distance to the contacts. The diffusion affects the spectral range 0.15-0.25 eV, increasing the photoconduction amplitude linearly with diffusion time. The optical gap value obtained from the measurements is $2Δ= 0.25$ eV and the tail of states below $2Δ$ is associated with the impurities in agreement with the Tüttö-Zawadowski theory. Diffusion-induced modification of current-voltage characteristics and decrease of the Peierls temperature are also observed. Neither changes in photoconduction spectra nor in the Peierls transition temperature of the control sample with Au contacts are found.

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preprint2014arXiv

Photoconduction in the Peierls conductor monoclinic TaS$_3$

Photoconduction in the monoclinic phase of quasi-one-dimensional conductor TaS$_3$ has been observed at $T < 70$~K. It was studied jointly with low-temperature ohmic and non-linear dark conduction. The strong sample quality dependence of both photoconduction and dark conduction at this temperature region has been observed. Together with a similarity of the main features of the photoconduction characteristic of both monoclinic ({\it m-}TaS$_3$) and orthorhombic ({\it o-}TaS$_3$) samples the following new peculiarities of photoconduction in {\it m-}TaS$_3$ were found: 1) the dependence of the activation energy of photoconduction on temperature, $T$, 2) the change of the recombination mechanism from the linear type to the collisional one at low $T$ with a sample quality growth, 3) the existence of a fine structure of the electric-field dependence of photoconduction. Spectral study gives the Peierls energy gap value $2Δ^*= 0.18$~eV.

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preprint2012arXiv

Energy gap revealed by low-temperature scanning-tunnelling spectroscopy of Si(111)-7x7 surface in illuminated slightly-doped crystals

Physical properties of Si(111)-7x7 surface of low-doped n- and p-type Si samples is studied in the liquid helium temperature region by the scanning-tunnelling microscopy and spectroscopy. Conduction required for the study is provided by illumination of the surface. Application of illumination removes completely the band bending near the surface and restores initial population of the surface states. Our results indicate the existence of the energy gap 2Δ = 40 \pm 10 meV in intrinsically-populated Si(111)-7x7 surface.

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preprint2011arXiv

Electronic states inside the gap of quasi-one-dimensional conductor NbS_3(I)

The photoconductivity spectra of NbS_3 (phase I) crystals are studied. A drop of photoconductivity corresponding to the Peierls gap edge is observed. Reproducible spectral features are found at energies smaller the energy gap value. The first one is a peak at the energy 0.6 eV that is close to the midgap one. It has a threshold-like dependence of the amplitude on the electrical field applied. Another feature is a peak at the energy 0.9 eV near to the edge of the gap. We ascribe the origin of this peak to the stacking faults. The third one are continuous states between these peaks at energies 0.6-0.8 eV. We observed bleaching of the photoconductivity even below zero at this energies in the high electric field (700 V/cm) and under additional illumination applied.

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preprint2011arXiv

Photoconduction in CDW conductors

Photoconduction study of quasi-1D conductors allows to distinguish between the single-particle and collective {\it linear} conduction, investigate the effect of screening on collective transport and obtain interesting new details of the electronic energy structure of pure and doped CDW conductors. Here we present results of photoconduction study in quasi-1D conductors o-TaS$_3$, K$_{0.3}$MoO$_3$, and NbS$_3$(I).

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preprint1996arXiv

Strong-Pinning Effects in Low-Temperature Creep: Charge-Density Waves in TaS_3

Nonlinear conduction in the quasi-one dimensional conductor o-TaS_3 has been studied in the low-temperature region down to 30 mK. It was found that at temperatures below a few Kelvins the current-voltage (I-V) characteristics consist of several branches. The temperature evolution of the I-V curve proceeds through sequential freezing-out of the branches. The origin of each branch is attributed to a particular strong pinning impurity type. Similar behavior is expected for other physical systems with collective transport (spin-density waves, Wigner crystals, vortex lattices in type-II superconductors etc.) in the presence of strong pinning centers.

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