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Researcher profile

S. V. Lotkhov

S. V. Lotkhov contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.supr-concond-mat.mes-hall

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Published work

2 published item(s)

preprint2013arXiv

Single quasiparticle excitation dynamics on a superconducting island

We investigate single quasiparticle excitation dynamics on a small superconducting aluminum island connected to normal metallic leads by tunnel junctions. We find the island to be free of excitations within the measurement resolution allowing us to determine Cooper pair breaking rate to be less than 3 kHz. By tuning the Coulomb energy of the island to have an odd number of electrons, one of them remains unpaired. We detect it by measuring its relaxation rate via tunneling. By injecting electrons with a periodic gate voltage, we probe electron-phonon interaction and relaxation down to a single quasiparticle excitation pair, with a measured recombination rate of 8 kHz. Our experiment yields a strong test of BCS-theory in aluminum as the results are consistent with it without free parameters.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Pumping properties of the hybrid single-electron transistor in dissipative environment

Pumping characteristics were studied of the hybrid normal-metal/superconductor single-electron transistor embedded in a high-ohmic environment. Two 3 micrometer-long microstrip resistors of CrOx with a sum resistance R=80kOhm were placed adjacent to this hybrid device. Substantial improvement of pumping and reduction of the subgap leakage were observed in the low-MHz range. At higher frequencies 0.1-1GHz, a slowdown of tunneling due to the enhanced damping and electron heating negatively affected the pumping, as compared to the reference bare devices.

0 citations0 reviewsNo code linkedOpen access