Researcher profile

S. Sendelbach

S. Sendelbach contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2012arXiv

Coherent Josephson phase qubit with a single crystal silicon capacitor

We have incorporated a single crystal silicon shunt capacitor into a Josephson phase qubit. The capacitor is derived from a commercial silicon-on-insulator wafer. Bosch reactive ion etching is used to create a suspended silicon membrane; subsequent metallization on both sides is used to form the capacitor. The superior dielectric loss of the crystalline silicon leads to a significant increase in qubit energy relaxation times. T1 times up to 1.6 micro-second were measured, more than a factor of two greater than those seen in amorphous phase qubits. The design is readily scalable to larger integrated circuits incorporating multiple qubits and resonators.

preprint2011arXiv

Microwave Photon Counter Based on Josephson Junctions

We describe a microwave photon counter based on the current-biased Josephson junction. The junction is tuned to absorb single microwave photons from the incident field, after which it tunnels into a classically observable voltage state. Using two such detectors, we have performed a microwave version of the Hanbury Brown and Twiss experiment at 4 GHz and demonstrated a clear signature of photon bunching for a thermal source. The design is readily scalable to tens of parallelized junctions, a configuration that would allow number-resolved counting of microwave photons.

preprint2011arXiv

Superconducting Low-Inductance Undulatory Galvanometer Microwave Amplifier

We describe a microwave amplifier based on the Superconducting Low-inductance Undulatory Galvanometer (SLUG). The SLUG is embedded in a microstrip resonator, and the signal current is injected directly into the device loop. Measurements at 30 mK show gains of 25 dB at 3 GHz and 15 dB at 9 GHz. Amplifier performance is well described by a simple numerical model based on the Josephson junction phase dynamics. We expect optimized devices based on high critical current junctions to achieve gain greater than 15 dB, bandwidth of several hundred MHz, and added noise of order one quantum in the frequency range of 5-10 GHz.