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S. Satpathy

S. Satpathy appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-el

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Published work

19 published item(s)

preprint2020arXiv

Intrinsic orbital and spin Hall effects in monolayer transition metal dichalcogenides

Orbital Hall effect (OHE) is the phenomenon of transverse flow of orbital moment in presence of an applied electric field. Solids with broken inversion symmetry are expected to exhibit a strong OHE due to the presence of an intrinsic orbital moment at individual momentum points in the Brillouin zone, which in presence of an applied electric field, flows in different directions causing a net orbital Hall current. Here we provide a comprehensive understanding of the effect and its tunability in the monolayer 2D transition metal dichalcogenides (TMDCs). Both metallic and insulating TMDCs are investigated from full density-functional calculations, effective $d$-band tight-binding models, as well as a minimal four-band model for the valley points that captures the key physics of the system. For the tuning of the OHE, we examine the role of hole doping as well as the change in the band parameters, which, e. g., can be controlled by strain. We demonstrate that the OHE is a more fundamental effect than the spin Hall effect (SHE), with the momentum-space orbital moments inducing a spin moment in the presence of the spin-orbit coupling, leading to the SHE. The physics of the OHE, described here, is relevant for 2D materials with broken inversion symmetry in general, even beyond the TMDCs, providing a broad platform for future research.

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preprint2020arXiv

Intrinsic orbital moment and prediction of a large orbital Hall effect in the 2D transition metal dichalcogenides

Carrying information using generation and detection of the orbital current, instead of the spin current, is an emerging field of research, where the orbital Hall effect (OHE) is an important ingredient. Here, we propose a new mechanism of the OHE that occurs in {\it non-}centrosymmetric materials. We show that the broken inversion symmetry in the 2D transition metal dichalcogenides (TMDCs) causes a robust orbital moment, which flow in different directions due to the opposite Berry curvatures under an applied electric field, leading to a large OHE. This is in complete contrast to the inversion-symmetric systems, where the orbital moment is induced only by the external electric field. We show that the valley-orbital locking as well as the OHE both appear even in the absence of the spin-orbit coupling. The non-zero spin-orbit coupling leads to the well-known valley-spin locking and the spin Hall effect, which we find to be weak, making the TMDCs particularly suitable for direct observation of the OHE, with potential application in {\it orbitronics}.

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preprint2020arXiv

Magnetic Skyrmions in Condensed Matter Physics

Skyrmions were originally introduced in Particle Physics as a possible mechanism to explain the stability of particles. Lately the concept has been applied in Condensed Matter Physics to describe the newly discovered topologically protected magnetic configurations called the magnetic Skyrmions. This elementary review introduces the concept at a level suitable for beginning students of Physics.

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preprint2015arXiv

Percolative Metal-Insulator Transition in LaMnO$_3$

We show that the pressure-induced metal-insulator transition (MIT) in LaMnO$_3$ is fundamentally different from the Mott-Hubbard transition and is percolative in nature, with the measured resistivity obeying the percolation scaling laws. Using the Gutzwiller method to treat correlation effects in a model Hamiltonian that includes both Coulomb and Jahn-Teller interactions, we show, One, that the MIT is driven by a competition between electronic correlation and the electron-lattice interaction, an issue that has been long debated, and Two, that with compressed volume, the system has a tendency towards phase separation into insulating and metallic regions, consisting, respectively, of Jahn-Teller distorted and undistorted octahedra. This tendency manifests itself in a mixed phase of intermixed insulating and metallic regions in the experiment. Conduction in the mixed phase occurs by percolation and the MIT occurs when the metallic volume fraction, steadily increasing with pressure, exceeds the percolation threshold $v_c \approx 0.29$. Measured high-pressure resistivity follows the percolation scaling laws quite well, establishing the percolative nature of conduction, and the temperature dependence follows the Efros-Shklovskii variable-range hopping behavior for granular materials.

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preprint2013arXiv

Electric Field Tuning of the Rashba Effect in the Polar Perovskite Structures

We show that the Rashba effect at the polar perovskite surfaces and interfaces can be tuned by manipulating the two-dimensional electron gas (2DEG) by an applied electric field, using it to draw the 2DEG out to the surface or push it deeper into the bulk, thereby controlling the surface-sensitive phenomenon. These ideas are illustrated by a comprehensive density-functional study of the recently-discovered polar KTaO$_3$ surface. Analytical results obtained with a tight-binding model unravel the interplay between the various factors affecting the Rashba effect such as the strength of the spin-orbit interaction and the surface-induced asymmetry. Our work helps interpret the recent experiments on the KTaO$_3$ surface as well as the SrTiO$_3$/LaAlO$_3$ interface.

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preprint2013arXiv

Gutzwiller Variational Method for Intersite Coulomb Interactions: The Spinless Fermion Model in One Dimension

We study the Gutzwiller method for the spinless fermion model in one dimension, which is one of the simplest models that incorporates the intersite Coulomb interaction. The Gutzwiller solution of this model has been studied in the literature but with differing results. We obtain the Gutzwiller solution of the problem by a careful enumeration of the many-particle configurations and explain the origin of the discrepancy in the literature to be due to the neglect of the correlation between the neighbouring bond occupancies. The correct implementation of the Gutzwiller approach yields results different from the slave-boson mean-field theory, unlike for the Hubbard model with on-site interaction, where both methods are known to be equivalent. The slave-boson and the Gutzwiller results are compared to the exact solution, available for the half-filled case, and to the numerical exact diagonalization results for the case of general filling.

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preprint2013arXiv

Ruderman-Kittel-Kasuya-Yosida interaction in biased bilayer graphene

We study the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between two contact magnetic impurities placed on bilayer graphene (BLG). We compute the interaction mediated by the carriers of the pristine and biased BLG as well as the conduction electrons of the doped system. The results are obtained from the linear-response expression for the susceptibility written in terms of the integral over lattice Green's functions. For the unbiased system, we obtain some analytical expressions in terms of the Meijer G-functions, which consist of the product of two oscillatory terms, one coming from the interference between the two Dirac points and the second coming from the Fermi momentum. In particular, for the undoped BLG, the system exhibits the RKKY interaction commensurate with its bipartite nature as expected from the particle-hole symmetry of the system. Furthermore, we explore a beating pattern of oscillations of the RKKY interaction in a highly doped BLG system within the four-band continuum model. Besides, we discuss the discrepancy between the short-range RKKY interaction calculated from the two-band model and that obtained from the four-band continuum model. The final results for the applied gate voltage are obtained numerically and are fitted with the functional forms based on the results for the unbiased case. In this case, we show that the long-range behavior is scaled with a momentum that depends on Fermi energy and gate voltage, allowing the possibility of tuning of the RKKY interaction by gate voltage.

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preprint2012arXiv

Electronic structure of the substitutional vacancy in graphene: Density-functional and Green's function studies

We study the electronic structure of graphene with a single substitutional vacancy using a combination of the density-functional, tight-binding, and impurity Green's function approaches. Density functional studies are performed with the all-electron spin-polarized linear augmented plane wave (LAPW) method. The three $sp^2 σ$ dangling bonds adjacent to the vacancy introduce localized states (V$σ$) in the mid-gap region, which split due to the crystal field and a Jahn-Teller distortion, while the $p_z π$ states introduce a sharp resonance state (V$π$) in the band structure. For a planar structure, symmetry strictly forbids hybridization between the $σ$ and the $π$ states, so that these bands are clearly identifiable in the calculated band structure. As for the magnetic moment of the vacancy, the Hund's-rule coupling aligns the spins of the four localized V$σ_1 \uparrow \downarrow$, V$σ_2 \uparrow $, and the V$π\uparrow$ electrons resulting in a S=1 state, with a magnetic moment of $2 μ_B$, which is reduced by about $0.3 μ_B$ due to the anti-ferromagnetic spin-polarization of the $π$ band itinerant states in the vicinity of the vacancy. This results in the net magnetic moment of $1.7 μ_B$. Using the Lippmann-Schwinger equation, we reproduce the well-known $\sim 1/r$ decay of the localized V$π$ wave function with distance and in addition find an interference term coming from the two Dirac points, previously unnoticed in the literature. The long-range nature of the V$π$ wave function is a unique feature of the graphene vacancy and we suggest that this may be one of the reasons for the widely varying relaxed structures and magnetic moments reported from the supercell band calculations in the literature.

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preprint2012arXiv

Nuclear Tunnelling and Dynamical Jahn-Teller Effect in Graphene with Vacancy

We show that the substitutional vacancy in graphene forms a dynamical Jahn-Teller center. The adiabatic potential surface resulting from the electron-lattice coupling was computed using density-functional methods and subsequently the Schrödinger equation was solved for the nuclear motion. Our calculations show a large tunnelling splitting $3 Γ$ of about 86 cm$^{-1}$. %, which is large as compared to the typical strain splitting. The effect results in a large delocalization of the carbon nuclear wave functions around the vacancy leading to a significant broadening of the Jahn-Teller active $sp^2σ$ electron states. The tunnelling splitting should be observable in electron paramagnetic resonance and two-photon resonance scattering experiments.

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preprint2012arXiv

On the Ruderman-Kittel-Kasuya-Yosida interaction in graphene

The two dimensionality plus the linear band structure of graphene leads to new behavior of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction, which is the interaction between two magnetic moments mediated by the electrons of the host crystal. We study this interaction from linear response theory. There are two equivalent methods both of which may be used for the calculation of the susceptibility, one involving the integral over a product of two Green's functions and the second that involves the excitations between occupied and unoccupied states, which was followed in the original work of Ruderman and Kittel. Unlike the $J \propto (2k_FR)^{-2} \sin (2k_FR) $ behavior of an ordinary two-dimensional (2D) metal, $J$ in graphene falls off as $1/R^3$, shows the $1 + \cos ((\bm{K}-\bm{K'}).\bm{R})$-type of behavior, which contains an interference term between the two Dirac cones, and it oscillates for certain directions and not for others. Quite interestingly, irrespective of any oscillations, the RKKY interaction in graphene is always ferromagnetic for moments located on the same sublattice and antiferromagnetic for moments on the opposite sublattices, a result that follows from particle-hole symmetry.

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preprint2011arXiv

Analytical Expression for the RKKY Interaction in Doped Graphene

We obtain an analytical expression for the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction $J$ in electron or hole doped graphene for linear Dirac bands. The results agree very well with the numerical calculations for the full tight-binding band structure in the regime where the linear band structure is valid. The analytical result, expressed in terms of the Meijer G-function, consists of a product of two oscillatory terms, one coming from the interference between the two Dirac cones and the second coming from the finite size of the Fermi surface. For large distances, the Meijer G-function behaves as a sinusoidal term, leading to the result $J \sim R^{-2} k_F \sin (2 k_F R) {1 + \cos[(K-K').R]}$ for moments located on the same sublattice. The $R^{-2}$ dependence, which is the same for the standard two-dimensional electron gas, is universal irrespective of the sublattice location and the distance direction of the two moments except when $k_F =0$ (undoped case), where it reverts to the $R^{-3}$ dependence. These results correct several inconsistencies found in the literature.

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preprint2010arXiv

Electronic Phases and Phase Separation in the Hubbard-Holstein Model of a Polar Interface

From a mean-field solution of the Hubbard-Holstein model, we show that a rich variety of different electronic phases can result at the interface between two polar materials such as LaAlO$_3$/SrTiO$_3$. Depending on the strengths of the various competing interactions, viz., the electronic kinetic energy, electron-phonon interaction, Coulomb energy, and electronic screening strength, the electrons could (i) either be strongly confined to the interface forming a 2D metallic or an insulating phase, (ii) spread deeper into the bulk making a 3D phase, or (iii) become localized at individual sites forming a Jahn-Teller polaronic phase. In the polaronic phase, the Coulomb interaction could lead to unpaired electrons resulting in magnetic Kondo centers. Under appropriate conditions, electronic phase separation may also occur resulting in the coexistence of metallic and insulating regions at the interface.

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preprint2010arXiv

RKKY Interaction in Graphene from Lattice Green's Function

We study the exchange interaction $J$ between two magnetic impurities in graphene (the RKKY interaction) by directly computing the lattice Green's function for the tight-binding band structure for the honeycomb lattice. The method allows us to compute $J$ numerically for much larger distances than can be handled by finite-lattice calculations as well as for small distances. % avoids the use of a cutoff function often invoked in the literature to curtail the diverging contributions from the linear bands and yields results that are valid for all distances. In addition, we rederive the analytical long-distance behavior of $J$ for linearly dispersive bands and find corrections to the oscillatory factor that were previously missed in the literature. The main features of the RKKY interaction in graphene are that unlike the $J \propto (2k_FR)^{-2} \sin (2k_FR) $ behavior of an ordinary 2D metal in the long-distance limit, $J$ in graphene falls off as $1/R^3$, shows the $1 + \cos ((K-K').R)$-type oscillations with additional phase factors depending on the direction, and exhibits a ferromagnetic interaction for moments on the same sublattice and an antiferromagnetic interaction for moments on the opposite sublattices as required by particle-hole symmetry. The computed $J$ with the full band structure agrees with our analytical results in the long-distance limit including the oscillatory factors with the additional phases.

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preprint2009arXiv

Magnetic and Orbital Order in LaMnO$_3$ under Uniaxial Strain: A Model Study

The effect of uniaxial strain on electronic structure and magnetism in LaMnO$_3$ is studied from a model Hamiltonian that illustrates the competition between the Jahn-Teller, super exchange, and double exchange interactions. We retain in our model the three main octahedral distortions ($Q_1, Q_2$, and $Q_3$), which couple to the Mn $(e_g)$ electrons. Our results show the ground state to be a type A antiferromagnetic (AFM) insulating state for the unstrained case, consistent with experiments. With tensile strain (stretching along the c axis), the ground state changes into a ferromagnetic and eventually into a type G$^\prime$ AFM structure, while with compressive strain, we find the type A switching into a type G structure. The orbital ordering, which displays the well known checkerboard $x^2-1 / y^2-1$ structure for the unstrained case, retains more or less the same character for compressive strain, while changing into the $z^2-1$ character for tensile strains. While $Q_1$ and $Q_3$ are fixed by the strain components $\varepsilon_{xx}$ and $\varepsilon_{zz}$ in our model, the magnitude of the in-plane distortion mode (Q$_2$), which varies to minimize the total energy, slowly diminishes with tensile strain, completely disappearing as the FM state is entered. Within our model, the FM state is metallic, while the three AFM states are insulating.

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preprint2009arXiv

Polar catastrophe, electron leakage, and magnetic ordering at the LaMnO$_3$/SrMnO$_3$ interface

Electronic reconstruction at the polar interface LaMnO$_3$/SrMnO$_3$ (LMO/SMO) (100) resulting from the polar catastrophe is studied from a model Hamiltonian that includes the double and super exchange interactions, the Madelung potential, and the Jahn-Teller coupling terms relevant for the manganites. We show that the polar catastrophe, originating from the alternately charged LMO layers and neutral SMO layers, is quenched by the accumulation of an extra half electron per cell in the interface region as in the case of the LaAlO$_3$/SrTiO$_3$ interface. In addition, the Mn e$_g$ electrons leak out from the LMO side to the SMO side, the extent of the leakage being controlled by the interfacial potential barrier and the substrate induced epitaxial strain. The leaked electrons mediate a Zener double exchange, making the layers adjacent to the interface ferromagnetic, while the two bulk materials away from the interface retain their original type A or G antiferromagnetic structures. A half-metallic conduction band results at the interface, sandwiched by the two insulating bulks. We have also studied how the electron leakage and consequently the magnetic ordering are affected by the substrate induced epitaxial strain. Comparisons are made with the results of the density-functional calculations for the (LMO)$_6$/(SMO)$_4$ superlattice.

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preprint2009arXiv

Strain and Electric Field Modulation of the Electronic Structure of Bilayer Graphene

We study how the electronic structure of the bilayer graphene (BLG) is changed by electric field and strain from {\it ab initio} density-functional calculations using the LMTO and the LAPW methods. Both hexagonal and Bernal stacked structures are considered. The BLG is a zero-gap semiconductor like the isolated layer of graphene. We find that while strain alone does not produce a gap in the BLG, an electric field does so in the Bernal structure but not in the hexagonal structure. The topology of the bands leads to Dirac circles with linear dispersion in the case of the hexagonally stacked BLG due to the interpenetration of the Dirac cones, while for the Bernal stacking, the dispersion is quadratic. The size of the Dirac circle increases with the applied electric field, leading to an interesting way of controlling the Fermi surface. The external electric field is screened due to polarization charges between the layers, leading to a reduced size of the band gap and the Dirac circle. The screening is substantial in both cases and diverges for the Bernal structure for small fields as has been noted by earlier authors. As a biproduct of this work, we present the tight-binding parameters for the free-standing single layer graphene as obtained by fitting to the density-functional bands, both with and without the slope constraint for the Dirac cone.

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preprint2008arXiv

Effects of Strain on Orbital Ordering and Magnetism at the Perovskite Oxide Interfaces: LaMnO$_3$/SrMnO$_3$

We study how strain affects orbital ordering and magnetism at the interface between SrMnO$_3$ and LaMnO$_3$ from density-functional calculations and interpret the basic results in terms of a three-site Mn-O-Mn model. Magnetic interaction between the Mn atoms is governed by a competition between the antiferromagnetic superexchange of the Mn t$_{2g}$ core spins and the ferromagnetic double exchange of the itinerant e$_g$ electrons. While the core electrons are relatively unaffected by the strain, the orbital character of the itinerant electron is strongly affected, which in turn causes a large change in the strength of the ferromagnetic double exchange. The epitaxial strain produces the tetragonal distortion of the MnO$_6$ octahedron, splitting the Mn-e$_g$ states into x$^2$-y$^2$ and 3z$^2$-1 states, with the former being lower in energy, if the strain is tensile in the plane, and opposite if the strain is compressive. For the case of the tensile strain, the resulting higher occupancy of the x$^2$-y$^2$ orbital enhances the in-plane ferromagnetic double exchange owing to the larger electron hopping in the plane, causing at the same time a reduction of the out-of-plane double exchange. This reduction is large enough to be overcome by antiferromagnetic superexchange, which wins to produce a net antiferromagnetic interaction between the out-of-plane Mn atoms. For the case of the in-plane compressive strain, the reverse happens, viz., that the higher occupancy of the 3z$^2$-1 orbital results in the out-of-plane ferromagnetic interaction, while the in-plane magnetic interaction remains antiferromagnetic. Concrete density-functional results are presented for the (LaMnO$_3$)$_1$/(SrMnO$_3$)$_1$ and (LaMnO$_3$)$_1$/(SrMnO$_3$)$_3$ superlattices for various strain conditions.

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preprint2008arXiv

Electronic and Magnetic Structure of the (LaMnO$_3$)$_{2n}$/(SrMnO$_3$)$_n$ Superlattices

We study the magnetic structure of the (LaMnO$_3$)$_{2n}$/(SrMnO$_3$)$_n$ superlattices from density-functional calculations. In agreement with the experiments, we find that the magnetism changes with the layer thickness `n'. The reason for the different magnetic structures is shown to be the varying potential barrier across the interface, which controls the leakage of the Mn-e$_g$ electrons from the LMO side to the SMO side. This in turn affects the interfacial magnetism via the carrier-mediated Zener double exchange. For n=1 superlattice, the Mn-e$_g$ electrons are more or less spread over the entire lattice, so that the magnetic behavior is similar to the equivalent alloy compound La$_{2/3}$Sr$_{1/3}$MnO$_3$. For larger n, the e$_g$ electron transfer occurs mostly between the two layers adjacent to the interface, thus leaving the magnetism unchanged and bulk-like away from the interface region.

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preprint2008arXiv

Two Dimensional Spin-Polarized Electron Gas at the Oxide Interfaces

The formation of a novel spin-polarized 2D electron gas at the LaMnO$_3$ monolayer embedded in SrMnO$_3$ is predicted from the first-principles density-functional calculations. The La (d) electrons become confined in the direction normal to the interface in the potential well of the La layer, serving as a positively-charged layer of electron donors. These electrons mediate a ferromagnetic alignment of the Mn t$_{2g}$ spins near the interface via the Anderson-Hasegawa double exchange and become, in turn, spin-polarized due to the internal magnetic fields of the Mn moments.

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