Researcher profile

S. Sarangi

S. Sarangi contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2009arXiv

Pion correlations in Nuclear Matter

The saturation properties of the nuclear matter taking pion correlations into account is studied. We construct a Bogoliubov transformations for the pion pair operators and calculate the energy associated with the pion pairs. The pion dispersion relation is investigated. We next study the correlation energy due to one pion exchange in nuclear matter and neutron matter at random phase approximation using the generator coordinate method. The techniques of the charged pion correlations are discussed in the neutron matter calculations. We observe that there is no sign of the pion condensation in this model.

preprint2005arXiv

A new method for direct rf power absorption studies in CMR materials and high T_c superconductors

The design, fabrication and performance of an apparatus for the measurement of direct rf power absorption in colossal magnetoresistive (CMR) and superconducting samples are described. The system consists of a self-resonant LC tank circuit of an oscillator driven by a NOT logic gate. The samples under investigation are placed in the core of the coil forming the inductance L and the absorbed power is determined from the measured change in the current supplied to the oscillator circuit. A customized low temperature insert is used to integrate the experiment with a commercial Oxford Instruments cryostat and temperature controller. The oscillator working in the rf range between 1 MHz to 25 MHz is built around an IC 74LS04. The temperature can be varied from 4.2 to 400 K and the magnetic field from 0 to 1.4 T. The apparatus is capable of measuring direct power absorption in CMR and superconducting samples of volume as small as 1/1000 cm^3 with a signal to noise ratio of 10:1. Further increase in the sensitivity can be obtained by summing the results of repeated measurements obtained at a given temperature. The system performance is evaluated by measuring the absorbed power in La_0.7 Sr_0.3 MnO_3 (LSMO) CMR manganite samples and superconducting Y Ba_2 Cu_3 O_7 (YBCO) samples at different rf frequencies. All operations during the measurements are automated using a computer with a menu-driven software system, user input being required only for the initiation of the measurement sequence.

preprint2005arXiv

Frequent JJ decoupling is the main origin of AC losses in the superconducting state

The origins of AC losses in the high Tc superconductors are not addressed adequately in literature. We found out, frequent Josephson Junction (JJ) decoupling (both intergranular and the interlayer) due to the flow of AC current is one of the main origins of the AC losses in high Tc superconductors. We have determined the AC losses in superconductors in the rf range by measuring the absolute value of non-resonant rf power absorbed by the samples. Our data shows that under certain conditions when both the number density of JJs present in the sample and the JJ critical current cross a threshold value, AC losses in the superconducting state keeps on increasing with decreasing temperature below Tc. The underlying mechanism is an interesting interplay of JJ coupling energy and the amplitude of rf voltage applied to the sample. The effect of an applied magnetic field, variation of rf frequency and temperature were studied in detail. To find out the exact relation between the JJ coupling energy, JJ number density, applied AC frequency, the amplitude of AC current and the AC losses in superconductors, we have studied samples of different crystalline properties, different grain sizes, pressurized with different pressure and sintered at different physical and chemical situations. The implementations of these results are discussed. These results have important implications for the understanding of the origin of AC losses and characterization of superconducting samples. In this paper we also extend the capability of the AC losses studies in superconductors for the characterization of materials for device applications.