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S. Radescu

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Published work

3 published item(s)

preprint2022arXiv

Layered topological semimetal GaGeTe: new polytype with non-centrosymmetric structure

GaGeTe is a layered material composed of germanene and GaTe sublayers that has been recently predicted to be a basic Z2 topological semimetal. To date, only one polytype of GaGeTe is known with trigonal centrosymmetric structure (alpha phase, space group R-3m, No. 166). Here we show that as-grown samples of GaGeTe show traces of at least another polytype with hexagonal non-centrosymmetric structure (beta phase, space group P63mc, No. 186). Moreover, we suggest that another bulk hexagonal polytype (gamma phase, space group P-3m1, No. 164) could also be found near room conditions. Both alpha and beta polytypes have been identified and characterized by means of X-ray diffraction and Raman scattering measurements with the support of ab initio calculations. We provide the vibrational properties of both polytypes and show that the Raman spectrum reported for GaGeTe almost forty years ago and attributed to the alpha phase, was, in fact, that of the secondary beta phase. Additionally, we show that a Fermi resonance occurs in alpha-GaGeTe under non-resonant excitation conditions, but not under resonant excitation conditions. Theoretical calculations show that bulk beta-GaGeTe is a non-centrosymmetric weak topological semimetal with even smaller lattice thermal conductivity than centrosymmetric bulk alpha-GaGeTe. In perspective, our work paves the way for the control and engineering of GaGeTe polytypes to design and implement complex van der Waals heterostructures formed by a combination of centrosymmetric and non-centrosymmetric layers of up to three different polytypes in a single material, suitable for a number of fundamental studies and technological applications.

preprint2019arXiv

Orpiment under compression: metavalent bonding at high pressure

We report a joint experimental and theoretical study of the structural, vibrational, and electronic properties of layered monoclinic arsenic sulfide (alpha-As2S3), aka mineral orpiment, under compression. X-ray diffraction and Raman scattering measurements performed in orpiment samples at high pressure and combined with ab initio calculations have allowed us to determine the equation of state and the tentative assignment of the symmetry of many Raman-active modes of orpiment. From our results, we conclude that no first-order phase transition occurs up to 25 GPa at room temperature; however, compression leads to an isostructural phase transition above 20 GPa. In fact, As coordination increases from threefold at room pressure to more than fivefold above 20 GPa. This increase in coordination can be understood as the formation of metavalent bonding at high pressure, which results in a progressive decrease of the electronic and optical bandgap, an increase of the dielectric tensor and Born effective charges, and a considerable softening of many high-frequency optical modes with pressure. The formation of metavalent bonding may also explain the behavior of other group-15 sesquichalcogenides under compression. Moreover, our results suggest that group-15 sesquichalcogenides either show metavalent bonding at room pressure or undergo a transition from p-type covalent bonding at room pressure towards metavalent bonding at high pressure, as a preceding phase towards metallic bonding at very high pressure.

preprint2011arXiv

A combined high-pressure experimental and theoretical study of the electronic band-structure of scheelite-type AWO4 (A = Ca, Sr, Ba, Pb) compounds

The optical-absorption edge of single crystals of CaWO4, SrWO4, BaWO4, and PbWO4 has been measured under high pressure up to ~20 GPa at room temperature. From the measurements we have obtained the evolution of the band-gap energy with pressure. We found a low-pressure range (up to 7-10 GPa) where alkaline-earth tungstates present a very small Eg pressure dependence (-2.1 < dEg/dP < 8.9 meV/GPa). In contrast, in the same pressure range, PbWO4 has a pressure coefficient of -62 meV/GPa. The high-pressure range is characterized in the four compounds by an abrupt decrease of Eg followed by changes in dEg/dP. The band-gap collapse is larger than 1.2 eV in BaWO4. We also calculated the electronic-band structures and their pressure evolution. Calculations allow us to interpret experiments considering the different electronic configuration of divalent metals. Changes in the pressure evolution of Eg are correlated with the occurrence of pressure-induced phase transitions. The band structures for the low- and high-pressure phases are also reported. No metallization of any of the compounds is detected in experiments nor is predicted by calculations.