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A. Muñoz

A. Muñoz contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2026arXiv

Measurement of muon neutrino induced charged current interactions without charged pions in the final state using a new T2K off-axis near detector WAGASCI-BabyMIND

We report a flux-integrated cross section measurement of muon neutrino interactions on water and hydrocarbon via charged current reactions without charged pions in the final state with the WAGASCI-BabyMIND detector which was installed in the T2K near detector hall in 2018. The detector is located 1.5$^\circ$ off-axis and is exposed to a more energetic neutrino flux than ND280, another T2K near detector, which is located at a different off-axis position. The total flux-integrated cross section is measured to be $1.26 \pm 0.18\,(stat.+syst.) \times 10^{-39} $ $\mathrm{cm^{2}/nucleon}$ on CH and $1.44 \pm 0.21\,(stat.+syst.) \times 10^{-39} $ $\mathrm{cm^{2}/nucleon}$ on H$_{2}$O. These results are compared to model predictions provided by the NEUT v5.3.2 and GENIE v2.8.0 MC generators and the measurements are compatible with these models. Differential cross sections in muon momentum and cosine of the muon scattering angle are also reported. This is the first such measurement reported with the WAGASCI-BabyMIND detector and utilizes the 2020 and 2021 datasets.

preprint2025arXiv

Results from the T2K experiment on neutrino mixing including a new far detector $μ$-like sample

We have made improved measurements of three-flavor neutrino mixing with 19.7(16.3)$\times 10^{20}$ protons on target in (anti-)neutrino-enhanced beam modes. A new sample of muon-neutrino events with tagged pions has been added at the far detector, as well as new proton and photon-tagged samples at the near detector. Significant improvements have been made to the flux and neutrino interaction modeling. T2K data continue to prefer the normal mass ordering and upper octant of $\sin^2θ_{23}$ with a near-maximal value of the charge-parity violating phase with best-fit values in the normal ordering of $δ_{\scriptscriptstyle\mathrm{CP}}=-2.18\substack{+1.22 \\ -0.47}$, $\sin^2θ_{23}=0.559\substack{+0.018 \\ -0.078}$ and $Δm^2_{32}=(+2.506\substack{+0.039 \\ -0.052})\times 10^{-3}$ eV$^{2}$.

preprint2022arXiv

Layered topological semimetal GaGeTe: new polytype with non-centrosymmetric structure

GaGeTe is a layered material composed of germanene and GaTe sublayers that has been recently predicted to be a basic Z2 topological semimetal. To date, only one polytype of GaGeTe is known with trigonal centrosymmetric structure (alpha phase, space group R-3m, No. 166). Here we show that as-grown samples of GaGeTe show traces of at least another polytype with hexagonal non-centrosymmetric structure (beta phase, space group P63mc, No. 186). Moreover, we suggest that another bulk hexagonal polytype (gamma phase, space group P-3m1, No. 164) could also be found near room conditions. Both alpha and beta polytypes have been identified and characterized by means of X-ray diffraction and Raman scattering measurements with the support of ab initio calculations. We provide the vibrational properties of both polytypes and show that the Raman spectrum reported for GaGeTe almost forty years ago and attributed to the alpha phase, was, in fact, that of the secondary beta phase. Additionally, we show that a Fermi resonance occurs in alpha-GaGeTe under non-resonant excitation conditions, but not under resonant excitation conditions. Theoretical calculations show that bulk beta-GaGeTe is a non-centrosymmetric weak topological semimetal with even smaller lattice thermal conductivity than centrosymmetric bulk alpha-GaGeTe. In perspective, our work paves the way for the control and engineering of GaGeTe polytypes to design and implement complex van der Waals heterostructures formed by a combination of centrosymmetric and non-centrosymmetric layers of up to three different polytypes in a single material, suitable for a number of fundamental studies and technological applications.

preprint2022arXiv

Theoretical study of the stability of the tetradymite-like phases of Sb$_2$S$_3$, Bi$_2$S$_3$, and Sb$_2$Se$_3$

We report a comparative theoretical study of the \textit{Pnma} and \textit{R-3m} phases of Sb$_2$S$_3$, Bi$_2$S$_3$, and Sb$_2$Se$_3$ close to ambient pressure. Our enthalpy calculations at 0 K show that at ambient pressure the \textit{R-3m} (tetradymite-like) phase of Sb$_2$Se$_3$ is energetically more stable than the \textit{Pnma} phase, contrary to what is observed for Sb$_2$S$_3$ and Bi$_2$S$_3$, and irrespective of the exchange-correlation functional employed in the calculations. The result for Sb$_2$Se$_3$ is in contradiction to experiments where all three compounds are usually grown in the \textit{Pnma} phase. This result is further confirmed by free-energy calculations taking into account the temperature dependence of the unit-cell volumes and phonon frequencies. Lattice dynamics and elastic tensor calculations further show that both \textit{Pnma} and \textit{R-3m} phases of Sb$_2$Se$_3$ are dynamically and mechanically stable at zero applied pressure. Since these results suggest that the formation of the \textit{R-3m} phase for Sb$_2$Se$_3$ should be feasible at close to ambient conditions, we provide a theoretical crystal structure and simulated Raman and infrared spectra to help in its identification. We also discuss the results of the two published works that have claimed to have synthesized tetradymite-like Sb$_2$Se$_3$. Finally, the stability of the \textit{R-3m} phase across the three group-15 \textit{A$_2$X$_3$} sesquichalcogenides is analysed based on their van der Waals gap and X-X in-plane geometry.

preprint2021arXiv

Anomalous Raman Modes in Tellurides

Two broad bands are usually found in the Raman spectrum of many Te-based chalcogenides, which include binary compounds, like ZnTe, CdTe, HgTe, GaTe, GeTe, SnTe, PbTe, GeTe2, As2Te3, Sb2Te3, Bi2Te3, NiTe2, IrTe2, TiTe2, as well as ternary compounds, like GaGeTe, SnSb2Te4, SnBi2Te4, and GeSb2Te5. Many different explanations have been proposed in the literature for the origin of these two anomalous broad bands in tellurides, usually located between 119 and 145 cm-1. They have been attributed to the own sample, to oxidation, to the folding of Brillouin-edge modes onto the zone center, to the existence of a double resonance, like that of graphene, or to the formation of Te precipitates. In this paper, we provide arguments to demonstrate that such bands correspond to clusters or precipitates of trigonal Te in form of nanosize or microsize grains or layers that are segregated either inside or at the surface of the samples. Several mechanisms for Te segregation are discussed and sample heating caused by excessive laser power during Raman scattering measurements is emphasized. Finally, we show that anomalous Raman modes related to Se precipitates also occur in selenides, thus providing a general vision for a better characterization of selenides and tellurides by means of Raman scattering measurements and for a better understanding of chalcogenides in general.

preprint2019arXiv

Orpiment under compression: metavalent bonding at high pressure

We report a joint experimental and theoretical study of the structural, vibrational, and electronic properties of layered monoclinic arsenic sulfide (alpha-As2S3), aka mineral orpiment, under compression. X-ray diffraction and Raman scattering measurements performed in orpiment samples at high pressure and combined with ab initio calculations have allowed us to determine the equation of state and the tentative assignment of the symmetry of many Raman-active modes of orpiment. From our results, we conclude that no first-order phase transition occurs up to 25 GPa at room temperature; however, compression leads to an isostructural phase transition above 20 GPa. In fact, As coordination increases from threefold at room pressure to more than fivefold above 20 GPa. This increase in coordination can be understood as the formation of metavalent bonding at high pressure, which results in a progressive decrease of the electronic and optical bandgap, an increase of the dielectric tensor and Born effective charges, and a considerable softening of many high-frequency optical modes with pressure. The formation of metavalent bonding may also explain the behavior of other group-15 sesquichalcogenides under compression. Moreover, our results suggest that group-15 sesquichalcogenides either show metavalent bonding at room pressure or undergo a transition from p-type covalent bonding at room pressure towards metavalent bonding at high pressure, as a preceding phase towards metallic bonding at very high pressure.