BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

S. P. Giblin

S. P. Giblin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallphysics.ins-detcond-mat.othercond-mat.supr-conquant-ph

Catalog footprint

What is connected

6works
5topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

6 published item(s)

preprint2013arXiv

NbSi nanowire quantum-phase-slip circuits: dc supercurrent blockade, microwave measurements and thermal analysis

We present a detailed report of microwave irradiation of ultra-narrow superconducting nanowires. In our nanofabricated circuits containing a superconducting NbSi nanowire, a dc blockade of current flow was observed at low temperatures below a critical voltage Vc, a strong indicator of the existence of quantum phase-slip (QPS) in the nanowire. We describe the results of applying microwaves to these samples, using a range of frequencies and both continuous-wave and pulsed drive, in order to search for dual Shapiro steps which would constitute an unambiguous demonstration of quantum phase-slip. We observed no steps, and our subsequent thermal analysis suggests that the electron temperature in the series CrO resistors was significantly elevated above the substrate temperature, resulting in sufficient Johnson noise to wash out the steps. To understand the system and inform future work, we have constructed a numerical model of the dynamics of the circuit for dc and ac bias (both continuous wave and pulsed drive signals) in the presence of Johnson noise. Using this model, we outline important design considerations for device and measurement parameters which should be used in any future experiment to enable the observation of dual Shapiro steps at experimentally accessible temperatures and thus lead to the development of a QPS-based quantum current standard.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Gigahertz quantized charge pumping in graphene quantum dots

Single electron pumps are set to revolutionize electrical metrology by enabling the ampere to be re-defined in terms of the elementary charge of an electron. Pumps based on lithographically-fixed tunnel barriers in mesoscopic metallic systems and normal/superconducting hybrid turnstiles can reach very small error rates, but only at MHz pumping speeds corresponding to small currents of the order 1 pA. Tunable barrier pumps in semiconductor structures have been operated at GHz frequencies, but the theoretical treatment of the error rate is more complex and only approximate predictions are available. Here, we present a monolithic, fixed barrier single electron pump made entirely from graphene. We demonstrate pump operation at frequencies up to 1.4 GHz, and predict the error rate to be as low as 0.01 parts per million at 90 MHz. Combined with the record-high accuracy of the quantum Hall effect and proximity induced Josephson junctions, accurate quantized current generation brings an all-graphene closure of the quantum metrological triangle within reach. Envisaged applications for graphene charge pumps outside quantum metrology include single photon generation via electron-hole recombination in electrostatically doped bilayer graphene reservoirs, and for readout of spin-based graphene qubits in quantum information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Stabilization of single-electron pumps by high magnetic fields

We study the effect of perpendicular magnetic fields on a single-electron system with a strongly time-dependent electrostatic potential. Continuous improvements to the current quantization in these electron pumps are revealed by high-resolution measurements. Simulations show that the sensitivity of tunnel rates to the barrier potential is enhanced, stabilizing particular charge states. Nonadiabatic excitations are also suppressed due to a reduced sensitivity of the Fock-Darwin states to electrostatic potential. The combination of these effects leads to significantly more accurate current quantization.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Towards a quantum representation of the ampere using single electron pumps

Electron pumps generate a macroscopic electric current by controlled manipulation of single electrons. Despite intensive research towards a quantum current standard over the last 25 years, making a fast and accurate quantised electron pump has proved extremely difficult. Here we demonstrate that the accuracy of a semiconductor quantum dot pump can be dramatically improved by using specially designed gate drive waveforms. Our pump can generate a current of up to 150 pA, corresponding to almost a billion electrons per second, with an experimentally demonstrated current accuracy better than 1.2 parts per million (ppm) and strong evidence, based on fitting data to a model, that the true accuracy is approaching 0.01 ppm. This type of pump is a promising candidate for further development as a realisation of the SI base unit ampere, following a re-definition of the ampere in terms of a fixed value of the elementary charge.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Accurate high speed single-electron quantum dot preparation

Using standard microfabrication techniques it is now possible to construct devices, which appear to reliably manipulate electrons one at a time. These devices have potential use as building blocks in quantum computing devices, or as a standard of electrical current derived only from a frequency and the fundamental charge. To date the error rate in semiconductor 'tuneable-barrier' pump devices, those which show most promise for high frequency operation, have not been tested in detail. We present high accuracy measurements of the current from an etched GaAs quantum dot pump, operated at zero source-drain bias voltage with a single AC-modulated gate driving the pump cycle. By comparison with a reference current derived from primary standards, we show that the electron transfer accuracy is better than 15 parts per million. High-resolution studies of the dependence of the pump current on the quantum dot tuning parameters also reveal possible deviations from a model used to describe the pumping cycle.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Single- and few-electron dynamic quantum dots in a perpendicular magnetic field

We present experimental studies of the current pumped through a dynamic quantum dot over a wide range of magnetic fields. At low fields we observe repeatable structure indicating increased confinement of the electrons in the dynamic dot. At higher fields (B>3T), we observe structure which changes markedly from device to device suggesting that in this regime the transport is sensitive to local disorder. The results are significant for the development of dynamic quantum dot pumps as quantum standards of electrical current.

0 citations0 reviewsNo code linkedOpen access