Researcher profile

S. O. Ferreira

S. O. Ferreira contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2015arXiv

Ferromagnetic resonance and magnetoresistive measurements evidencing magnetic vortex crystal in nickel thin film with patterned antidot array

Ferromagnetic vortices deliver robust out-of-plane magnetization at extremely small scales. Their handling and creation therefore has high potential to become a necessary ingredient for future data storage technologies in order to keep up with the pace of growing information density demands. In this study we show that by using one step nanolithography method, we are able to create ferromagnetic vortex lattices in thin nickel films. The necessary control of the magnetic stray field at the domain edges was achieved by actively modifying the ferromagnetic thin film anisotropic properties at nanometer scale. We present experimental evidence using ferromagnetic resonance and magnetoresistance measurements supporting simulations based on the theoretical prediction of the proclaimed vortex structures.

preprint2015arXiv

Temperature effect on (2+1) experimental Kardar-Parisi-Zhang growth

We report on the effect of substrate temperature (T) on both local structure and long-wavelength fluctuations of polycrystalline CdTe thin films deposited on Si(001). A strong T-dependent mound evolution is observed and explained in terms of the energy barrier to inter-grain diffusion at grain boundaries, as corroborated by Monte Carlo simulations. This leads to transitions from uncorrelated growth to a crossover from random-to-correlated growth and transient anomalous scaling as T increases. Due to these finite-time effects, we were not able to determine the universality class of the system through the critical exponents. Nevertheless, we demonstrate that this can be circumvented by analyzing height, roughness and maximal height distributions, which allow us to prove that CdTe grows asymptotically according to the Kardar-Parisi-Zhang (KPZ) equation in a broad range of T. More important, one finds positive (negative) velocity excess in the growth at low (high) T, indicating that it is possible to control the KPZ non-linearity by adjusting the temperature.

preprint2013arXiv

Universal fluctuations in the growth of semiconductor thin films

Scaling of surface fluctuations of polycrystalline CdTe/Si(100) films grown by hot wall epitaxy are studied. The growth exponent of surface roughness and the dynamic exponent of the auto-correlation function in the mound growth regime agree with the values of the Kardar-Parisi-Zhang (KPZ) class. The scaled distributions of heights, local roughness, and extremal heights show remarkable collapse with those of the KPZ class, giving the first experimental observation of KPZ distributions in $2+1$ dimensions. Deviations from KPZ values in the long-time estimates of dynamic and roughness exponents are explained by spurious effects of multi-peaked coalescing mounds and by effects of grain shapes. Thus, this scheme for investigating universality classes of growing films advances over the simple comparison of scaling exponents.

preprint2011arXiv

Modelling of epitaxial film growth with a Ehrlich-Schwoebel barrier dependent on the step height

The formation of mounded surfaces in epitaxial growth is attributed to the presence of barriers against interlayer diffusion in the terrace edges, known as Ehrlich-Schwoebel (ES) barriers. We investigate a model for epitaxial growth using a ES barrier explicitly dependent on the step height. Our model has an intrinsic topological step barrier even in the absence of an explicit ES barrier. We show that mounded morphologies can be obtained even for a small barrier while a self-affine growth, consistent with the Villain-Lai-Das Sarma equation, is observed in absence of an explicit step barrier. The mounded surfaces are described by a super-roughness dynamical scaling characterized by locally smooth (faceted) surfaces and a global roughness exponent $α>1$. The thin film limit is featured by surfaces with self-assembled three-dimensional structures having an aspect ratio (height/width) that may increase or decrease with temperature depending on the strength of step barrier.