Researcher profile

I. R. B. Ribeiro

I. R. B. Ribeiro contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2015arXiv

Ferromagnetic resonance and magnetoresistive measurements evidencing magnetic vortex crystal in nickel thin film with patterned antidot array

Ferromagnetic vortices deliver robust out-of-plane magnetization at extremely small scales. Their handling and creation therefore has high potential to become a necessary ingredient for future data storage technologies in order to keep up with the pace of growing information density demands. In this study we show that by using one step nanolithography method, we are able to create ferromagnetic vortex lattices in thin nickel films. The necessary control of the magnetic stray field at the domain edges was achieved by actively modifying the ferromagnetic thin film anisotropic properties at nanometer scale. We present experimental evidence using ferromagnetic resonance and magnetoresistance measurements supporting simulations based on the theoretical prediction of the proclaimed vortex structures.

preprint2015arXiv

Temperature effect on (2+1) experimental Kardar-Parisi-Zhang growth

We report on the effect of substrate temperature (T) on both local structure and long-wavelength fluctuations of polycrystalline CdTe thin films deposited on Si(001). A strong T-dependent mound evolution is observed and explained in terms of the energy barrier to inter-grain diffusion at grain boundaries, as corroborated by Monte Carlo simulations. This leads to transitions from uncorrelated growth to a crossover from random-to-correlated growth and transient anomalous scaling as T increases. Due to these finite-time effects, we were not able to determine the universality class of the system through the critical exponents. Nevertheless, we demonstrate that this can be circumvented by analyzing height, roughness and maximal height distributions, which allow us to prove that CdTe grows asymptotically according to the Kardar-Parisi-Zhang (KPZ) equation in a broad range of T. More important, one finds positive (negative) velocity excess in the growth at low (high) T, indicating that it is possible to control the KPZ non-linearity by adjusting the temperature.