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S. M. Yang

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cond-mat.mtrl-sci cond-mat.mes-hall physics.plasm-ph

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preprint2026arXiv

Comparison of plasma response models for RMP effects on the divertor and scrape-off layer in KSTAR

Resonant magnetic perturbations (RMPs) are beneficial for control of edge localized modes (ELMs) in tokamaks. Nevertheless, a side effect is the appearance of a helical striations in the particle and heat loads onto divertor targets. The extent and field line connection of these striations is significantly altered by the plasma response to external perturbations. For an ELM suppressed H-mode plasma at KSTAR, magnetic footprints are computed by FLARE based on plasma response from GPEC, MARS-F, M3D-C1 and JOREK with substantial differences in the resulting footprints (from 2 cm to 14 cm). This is reflected in EMC3-EIRENE simulations of the resulting heat loads: it is found that either the peak value or the extent of the striations appear to be overestimated compared to IRTV measurements. Reasonable agreement can only be achieved for the smallest footprint for lower input power and lower cross-field transport, or for higher upstream density and radiative power losses.

preprint2011arXiv

Step bunching-induced vertical lattice mismatch and crystallographic tilt in vicinal BiFeO3(001) films

Epitaxial (001) BiFeO3 thin films grown on vicinal SrTiO3 substrates are under large anisotropic stress from the substrates. The variations of the crystallographic tilt angle and the c lattice constant, caused by the lattice mismatch, along the film thickness were analyzed quantitatively using the X-ray diffraction technique. By generalizing the Nagai model, we estimated how step bunching resulted in the vertical lattice mismatch between adjacent BiFeO3 layers, which induced the strain relaxation and crystallographic tilt. The step bunching was confirmed by the increased terrace width on the BiFeO3 surface.

preprint2010arXiv

Epitaxial growth of multiferroic Pb(Zr0.57Ti0.43)O3-Pb(Fe2/3W1/3)O3 solid-solution thin films and their magnetoelectric effects

We report on epitaxial growth of single-phase [Pb(Zr0.57Ti0.43)O3]0.8[Pb(Fe2/3W1/3)O3]0.2 (PZT-PFW) solid-solution thin films using pulsed laser deposition. X-ray diffraction measurements reveal that the films have a tetragonal structure. The films exhibit ferroelectric properties and weak ferromagnetic responses at room temperature. Magnetoelectric effects were investigated; the nonlinear magnetoelectric coefficient was measured and found to be comparable to those of multiferroic hexagonal manganites, but at least two orders of magnitude smaller than that for polycrystalline PZT-PFW films.

preprint2010arXiv

Unveiling the ac Dynamics of Ferroelectric Domains by Investigating the Frequency Dependence of Hysteresis Loops

We investigated nonequilibrium domain wall dynamics under an ac field by measuring the hysteresis loops of epitaxial ferroelectric capacitors at various frequencies and temperatures. Polarization switching is induced mostly by thermally activated creep motion at lower frequencies, and by viscous flow motion at higher frequencies. The dynamic crossover between the creep and flow regimes unveils two frequency-dependent scaling regions of hysteresis loops. Based on these findings, we constructed a dynamic phase diagram for hysteretic ferroelectric domain dynamics in the presence of ac fields.

preprint2009arXiv

Electric-field-controlled directional growth of ferroelectric domains in multiferroic BiFeO3 films

We describe the directional growth of ferroelectric domains in a multiferroic BiFeO3 thin film, which was grown epitaxially on a vicinal (001) SrTiO3 substrate. A detailed structural analysis of the film shows that a strain gradient, which can create a symmetry breaking in a ferroelectric double well potential, causes ferroelectric domains to grow with preferred directionality under the influence of an electric field. Our results suggest the possibility of controlling the direction of domain growth with an electric field by imposing constraints on ferroelectric films, such as a strain gradient.