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S. -M. Nie

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Published work

2 published item(s)

preprint2016arXiv

ARPES observation of Mn-pnictide hybridization and negligible band structure renormalization in BaMn$_2$As$_2$ and BaMn$_2$Sb$_2$

We performed an angle-resolved photoemission spectroscopy study of BaMn$_2$As$_2$ and BaMn$_2$Sb$_2$, which are isostructural to the parent compound BaFe$_2$As$_2$ of the 122 family of ferropnictide superconductors. We show the existence of a strongly $k_z$-dependent band gap with a minimum at the Brillouin zone center, in agreement with their semiconducting properties. Despite the half-filling of the electronic 3$d$ shell, we show that the band structure in these materials is almost not renormalized from the Kohn-Sham bands of density functional theory. Our photon energy dependent study provides evidence for Mn-pnictide hybridization, which may play a role in tuning the electronic correlations in these compounds.

preprint2016arXiv

Experimental evidence of large-gap two-dimensional topological insulator on the surface of ZrTe5

Two-dimensional (2D) topological insulators (TIs) with a large bulk band-gap are promising for experimental studies of the quantum spin Hall effect and for spintronic device applications. Despite considerable theoretical efforts in predicting large-gap 2D TI candidates, only few of them have been experimentally verified. Here, by combining scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy, we reveal that the top monolayer of ZrTe5 crystals hosts a large band gap of ~100 meV on the surface and a finite constant density-of-states within the gap at the step edge. Our first-principles calculations confirm the topologically nontrivial nature of the edge states. These results demonstrate that the top monolayer of ZrTe5 crystals is a large-gap 2D TI suitable for topotronic applications at high temperature.