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S. M. Albrecht

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Published work

7 published item(s)

preprint2016arXiv

Exponential Protection of Zero Modes in Majorana Islands

Majorana zero modes are quasiparticle excitations in condensed matter systems that have been proposed as building blocks of fault-tolerant quantum computers [1]. They are expected to exhibit non-Abelian particle statistics, in contrast to the usual statistics of fermions and bosons, enabling quantum operations to be performed by braiding isolated modes around one another. Quantum braiding operations are topologically protected insofar as these modes are pinned near zero energy, and the pinning is predicted to be exponential as the modes become spatially separated. Following theoretical proposals, several experiments have identified signatures of Majorana modes in proximitized nanowires and atomic chains, with small mode-splitting potentially explained by hybridization of Majoranas. Here, we use Coulomb-blockade spectroscopy in an InAs nanowire segment with epitaxial aluminum, which forms a proximity-induced superconducting Coulomb island (a Majorana island) that is isolated from normal-metal leads by tunnel barriers, to measure the splitting of near-zero-energy Majorana modes. We observe exponential suppression of energy splitting with increasing wire length. For short devices of a few hundred nanometers, sub-gap state energies oscillate as the magnetic field is varied, as is expected for hybridized Majorana modes. Splitting decreases by a factor of about ten for each half micrometer of increased wire length. For devices longer than about one micrometer, transport in strong magnetic fields occurs through a zero-energy state that is energetically isolated from a continuum, yielding uniformly spaced Coulomb-blockade conductance peaks, consistent with teleportation via Majorana modes. Our results help explain the trivial-to-topological transition in finite systems and to quantify the scaling of topological protection with end-mode separation.

preprint2016arXiv

InAs nanowire with epitaxial aluminium as a single-electron transistor with fixed tunnel barriers

We report on fabrication of single-electron transistors using InAs nanowires with epitaxial aluminium with fixed tunnel barriers made of aluminium oxide. The devices exhibit a hard superconducting gap induced by the proximized aluminium cover shell and they behave as metallic single-electron transistors. In contrast to the typical few channel contacts in semiconducting devices, our approach forms opaque multichannel contacts to a semiconducting wire and thus provides a complementary way to study them. In addition, we confirm that unwanted extra quantum dots can appear at the surface of the nanowire. Their presence is prevented in our devices, and also by inserting a protective layer of GaAs between the InAs and Al, the latter being suitable for standard measurement methods.

preprint2016arXiv

Towards realistic implementations of a Majorana surface code

Surface codes have emerged as promising candidates for quantum information processing. Building on the previous idea to realize the physical qubits of such systems in terms of Majorana bound states supported by topological semiconductor nanowires, we show that the basic code operations, namely projective stabilizer measurements and qubit manipulations, can be implemented by conventional tunnel conductance probes and charge pumping via single-electron transistors, respectively. The simplicity of the access scheme suggests that a functional code might be in close experimental reach.

preprint2015arXiv

Hard gap in epitaxial semiconductor-superconductor nanowires

Many present and future applications of superconductivity would benefit from electrostatic control of carrier density and tunneling rates, the hallmark of semiconductor devices. One particularly exciting application is the realization of topological superconductivity as a basis for quantum information processing. Proposals in this direction based on proximity effect in semiconductor nanowires are appealing because the key ingredients are currently in hand. However, previous instances of proximitized semiconductors show significant tunneling conductance below the superconducting gap, suggesting a continuum of subgap states---a situation that nullifies topological protection. Here, we report a hard superconducting gap induced by proximity effect in a semiconductor, using epitaxial Al-InAs superconductor-semiconductor nanowires. The hard gap, along with favorable material properties and gate-tunability, makes this new hybrid system attractive for a number of applications, as well as fundamental studies of mesoscopic superconductivity.

preprint2015arXiv

Parity lifetime of bound states in a proximitized semiconductor nanowire

Quasiparticle excitations can compromise the performance of superconducting devices, causing high frequency dissipation, decoherence in Josephson qubits, and braiding errors in proposed Majorana-based topological quantum computers. Quasiparticle dynamics have been studied in detail in metallic superconductors but remain relatively unexplored in semiconductor-superconductor structures, which are now being intensely pursued in the context of topological superconductivity. To this end, we introduce a new physical system comprised of a gate-confined semiconductor nanowire with an epitaxially grown superconductor layer, yielding an isolated, proximitized nanowire segment. We identify Andreev-like bound states in the semiconductor via bias spectroscopy, determine the characteristic temperatures and magnetic fields for quasiparticle excitations, and extract a parity lifetime (poisoning time) of the bound state in the semiconductor exceeding 10 ms.

preprint2014arXiv

Efficient out-coupling of high-purity single photons from a coherent quantum dot in a photonic-crystal cavity

We demonstrate a single-photon collection efficiency of $(44.3\pm2.1)\%$ from a quantum dot in a low-Q mode of a photonic-crystal cavity with a single-photon purity of $g^{(2)}(0)=(4\pm5)\%$ recorded above the saturation power. The high efficiency is directly confirmed by detecting up to $962\pm46$ kilocounts per second on a single-photon detector on another quantum dot coupled to the cavity mode. The high collection efficiency is found to be broadband, as is explained by detailed numerical simulations. Cavity-enhanced efficient excitation of quantum dots is obtained through phonon-mediated excitation and under these conditions, single-photon indistinguishability measurements reveal long coherence times reaching $0.77\pm0.19$ ns in a weak-excitation regime. Our work demonstrates that photonic crystals provide a very promising platform for highly integrated generation of coherent single photons including the efficient out-coupling of the photons from the photonic chip.

preprint2014arXiv

Epitaxy of Semiconductor-Superconductor nanowires

Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface plays a key role for the quality of the induced superconducting gap. Here we present epitaxial growth of semiconductor-metal core-shell nanowires by molecular beam epitaxy, a method that provides a conceptually new route to controlled electrical contacting of nanostructures and for designing devices for specialized applications such as topological and gate-controlled superconducting electronics. Our materials of choice, InAs/Al, are grown with epitaxially matched single plane interfaces, and alternative semiconductor/metal combinations allowing epitaxial interface matching in nanowires are discussed. We formulate the grain growth kinetics of the metal phase in general terms of continuum parameters and bicrystal symmetries. The method realizes the ultimate limit of uniform interfaces and appears to solve the soft-gap problem in superconducting hybrid structures.