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S. Loth

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Published work

3 published item(s)

preprint2015arXiv

Comparing XMCD and DFT with STM spin excitation spectroscopy for Fe and Co adatoms on Cu$_{2}$N/Cu(100)

We report on the magnetic properties of Fe and Co adatoms on a Cu$_{2}$N/Cu(100)-$c(2 \times 2)$ surface investigated by x-ray magnetic dichroism measurements and density functional theory (DFT) calculations including the local coulomb interaction. We compare these results with properties formerly deduced from STM spin excitation spectroscopy (SES) performed on the individual adatoms. In particular we focus on the values of the local magnetic moments determined by XMCD compared to the expectation values derived from the description of the SES data.The angular dependence of the projected magnetic moments along the magnetic field, as measured by XMCD, can be understood on the basis of the SES Hamiltonian. In agreement with DFT, the XMCD measurements show large orbital contributions to the total magnetic moment for both magnetic adatoms.

preprint2014arXiv

The emergence of classical behavior in magnetic adatoms

A wide class of nanomagnets shows striking quantum behavior, known as quantum spin tunneling (QST): instead of two degenerate ground states with opposite magnetizations, a bonding-antibonding pair forms, resulting in a splitting of the ground state doublet with wave functions linear combination of two classically opposite magnetic states, leading to the quenching of their magnetic moment. Here we study how QST is destroyed and classical behavior emerges in the case of magnetic adatoms, as the strength of their coupling, either to the substrate or to each other, is increased. Both spin-substrate and spin-spin coupling renormalize the QST splitting to zero allowing the environmental decoherence to eliminate superpositions between classical states, leading to the emergence of spontaneous magnetization.

preprint2007arXiv

Influence of surface-related strain and electric field on acceptor wave functions in Zincblende semiconductors

The spatial distribution of the local density of states (LDOS) at Mn acceptors near the (110) surface of p-doped InAs is investigated by Scanning Tunneling Microscopy (STM). The shapes of the acceptor contrasts for different dopant depths under the surface are analyzed. Acceptors located within the first ten subsurface layers of the semiconductor show a lower symmetry than expected from theoretical predictions of the bulk acceptor wave function. They exhibit a (001) mirror asymmetry. The degree of asymmetry depends on the acceptor atoms' depths. The measured contrasts for acceptors buried below the 10th subsurface layer closely match the theoretically derived shape. Two effects are able to explain the symmetry reduction: the strain field of the surface relaxation and the tip-induced electric field.