Researcher profile

S. L. Portalupi

S. L. Portalupi contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 15 - Baseline
3works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2015arXiv

Cavity-Enhanced Two-Photon Interference using Remote Quantum Dot Sources

Quantum dots in cavities have been shown to be very bright sources of indistinguishable single photons. Yet the quantum interference between two bright quantum dot sources, a critical step for photon based quantum computation, has never been investigated. Here we report on such a measurement, taking advantage of a deterministic fabrication of the devices. We show that cavity quantum electrodynamics can efficiently improve the quantum interference between remote quantum dot sources: poorly indistinguishable photons can still interfere with good contrast with high quality photons emitted by a source in the strong Purcell regime. Our measurements and calculations show that cavity quantum electrodynamics is a powerful tool for interconnecting several devices.

preprint2013arXiv

An entangling quantum-logic gate operated with an ultrabright single photon-source

We demonstrate unambiguous entangling operation of a photonic quantum-logic gate driven by an ultrabright solid-state single-photon source. Indistinguishable single photons emitted by a single semiconductor quantum dot in a micropillar optical cavity are used as target and control qubits. For a source brightness of 0.56 collected photons-per-pulse, the measured truth table has an overlap with the ideal case of 68.4%, increasing to 73.0% for a source brightness of 0.17 photons- per-pulse. The gate is entangling: at a source brightness of 0.48, the Bell-state fidelity is above the entangling threshold of 50%, and reaches 71.0% for a source brightness of 0.15.

preprint2013arXiv

Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths

Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300- 1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enahnce the electrically driven emission in a device via Purcell effect. A narrow (Δλ = 0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4 mW/cm2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects and other important silicon photonics applications.