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S. Kraemer

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cond-mat.mes-hall astro-ph.CO cond-mat.mtrl-sci cond-mat.supr-con

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preprint2022arXiv

Tunneling spectroscopy of few-monolayer NbSe$_2$ in high magnetic field: Ising protection and triplet superconductivity

In conventional Bardeen-Cooper-Scrieffer (BCS) superconductors, Cooper pairs of electrons of opposite spin (i.e. singlet structure) form the ground state. Equal spin triplet pairs (ESTPs), as in superfluid $^3$He, are of great interest for superconducting spintronics and topological superconductivity, yet remain elusive. Recently, odd-parity ESTPs were predicted to arise in (few-)monolayer superconducting NbSe$_2$, from the non-colinearity between the out-of-plane Ising spin-orbit field (due to the lack of inversion symmetry in monolayer NbSe$_2$) and an applied in-plane magnetic field. These ESTPs couple to the singlet order parameter at finite field. Using van der Waals tunnel junctions, we perform spectroscopy of superconducting NbSe$_2$ flakes, of 2--25 monolayer thickness, measuring the quasiparticle density of states (DOS) as a function of applied in-plane magnetic field up to 33T. In flakes $\lesssim$ 15 monolayers thick the DOS has a single superconducting gap. In these thin samples, the magnetic field acts primarily on the spin (vs orbital) degree of freedom of the electrons, and superconductivity is further protected by the Ising field. The superconducting energy gap, extracted from our tunnelling spectra, decreases as a function of the applied magnetic field. However, in bilayer NbSe$_2$, close to the critical field (up to 30T, much larger than the Pauli limit), superconductivity appears to be more robust than expected from Ising protection alone. Our data can be explained by the above-mentioned ESTPs.

preprint2016arXiv

On the limits to mobility in InAs quantum wells with nearly lattice-matched barriers

The growth and the density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to un-intentionally doped, low extended defect density InAs quantum wells with Al$_{1-x}$Ga$_{x}$Sb barriers are reported. The electron mobility limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier density and electric field independently. Analysis of the possible scattering mechanisms indicate the mobility was limited primarily by rough interfaces in narrow quantum wells and a combination of alloy disorder and interface roughness in wide wells at high carrier density within the first occupied electronic sub-band. At low carrier density the functional dependence of the mobility on carrier density provided evidence of coulombic scattering from charged defects. A gate-tuned electron mobility exceeding 750,000 cm$^{2}$/Vs was achieved at a sample temperature of 2 K.

preprint2015arXiv

Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks

Progress in the emergent field of topological superconductivity relies on synthesis of new material combinations, combining superconductivity, low density, and spin-orbit coupling (SOC). For example, theory [1-4] indicates that the interface between a one-dimensional (1D) semiconductor (Sm) with strong SOC and a superconductor (S) hosts Majorana modes with nontrivial topological properties [5-8]. Recently, epitaxial growth of Al on InAs nanowires was shown to yield a high quality S-Sm system with uniformly transparent interfaces [9] and a hard induced gap, indicted by strongly suppressed sub gap tunneling conductance [10]. Here we report the realization of a two-dimensional (2D) InAs/InGaAs heterostructure with epitaxial Al, yielding a planar S-Sm system with structural and transport characteristics as good as the epitaxial wires. The realization of 2D epitaxial S-Sm systems represent a significant advance over wires, allowing extended networks via top-down processing. Among numerous potential applications, this new material system can serve as a platform for complex networks of topological superconductors with gate-controlled Majorana zero modes [1-4]. We demonstrate gateable Josephson junctions and a highly transparent 2D S-Sm interface based on the product of excess current and normal state resistance.

preprint2010arXiv

Mid-Infrared Properties of the Swift Burst Alert Telescope Active Galactic Nuclei Sample of the Local Universe. I. Emission-Line Diagnostics

We compare mid-infrared emission-line properties, from high-resolution Spitzer spectra of a hard X-ray (14 -- 195 keV) selected sample of nearby (z < 0.05) AGN detected by the Burst Alert Telescope (BAT) aboard Swift. The luminosity distribution for the mid-infrared emission-lines, [O IV] 25.89 micron, [Ne II] 12.81 micron, [Ne III] 15.56 micron and [Ne V] 14.32/24.32 micron, and hard X-ray continuum show no differences between Seyfert 1 and Seyfert 2 populations, however six newly discovered BAT AGNs are under-luminous in [O IV], most likely the result of dust extinction in the host galaxy. The overall tightness of the mid-infrared correlations and BAT fluxes and luminosities suggests that the emission lines primarily arise in gas ionized by the AGN. We also compare the mid-infrared emission-lines in the BAT AGNs with those from published studies of ULIRGs, PG QSOs, star-forming galaxies and LINERs. We find that the BAT AGN sample fall into a distinctive region when comparing the [Ne III]/[Ne II] and the [O IV]/[Ne III] ratios. These line ratios are lower in sources that have been previously classified in the mid-infrared/optical as AGN than those found for the BAT AGN, suggesting that, in our X-ray selected sample, the AGN represents the main contribution to the observed line emission. These ratios represent a new emission line diagnostic for distinguishing between AGN and star forming galaxies.